Hot wire chemical vapor deposition of Si containing materials for solar cells

Carbonized tantalum catalysts for catalytic chemical vapor deposition of silicon films

“…Catalytic chemical vapor deposition (Cat-CVD), often called hotwire CVD (HWCVD), has received considerable attention in recent years since it is a promising technique for preparing device-quality Si films at low cost as well as high deposition rate [1][2][3][4][5][6][7]. In this method, Si-containing source gases are decomposed by catalytic cracking reactions on electrically heated catalyst wires and then the produced species are transported to the substrate at a low temperature to form the Si film.…”

“…Finally, the catalyst wire is broken with a rather short lifetime [9,18]. Thus, catalyst ageing due to Si contamination becomes a bottleneck issue to the practical application of Cat-CVD technique for Si film deposition [5,15,23].…”

Growth Process of Polyaniline Thin Films Formed by Hot Wire CVD

“…Filament aging has long been noted in diamond and silicon HWCVD. [6,10,12] For many refractory metals heated to high temperature, a carbide or silicide forms upon interaction with C-or Si-containing species, followed by carbon or silicon deposits. The C or Si may diffuse deeply into the metal wire.…”

“…[6][7][8] The species thus formed may further react in the gas phase and deposit on a substrate. HWCVD has been extensively employed for growing films of diamond, [9] silicon, [10] and silicon alloys, using hot wire temperatures well over 1000 8C.…”

Crystal growth in the low-temperature deposition of polycrystalline silicon thin film

“…For the synthesis of poly-Si films, HWCVD is widely chosen because of its low deposition temperature, large deposition area and low cost. Furthermore, poly-Si films deposited by HWCVD contain less hydrogen while displaying better crystallinity than films deposited by plasma enhanced chemical vapor deposition (PECVD) [7].…”