Growth Process of Polyaniline Thin Films Formed by Hot Wire CVD

Abstract

We explore the use of hot-wire (HW) CVD as an alternative, solvent-free technique to produce compact films similar to conventional polyaniline. Film deposition and molecular bonding are studied as functions of Ta filament temperature, aniline pressure, and substrate temperature to allow an insight into the film growth mechanism, which is postulated to depend largely on reactions of aniline with H and C atoms generated at the hot wire. The process gas, aniline, is found to cause rapid formation of tantalum carbide and carbon deposits on the hot Ta surface. The accompanying change in film quality as the filament ages is studied.

Iodine doped polyaniline thin film for heterostructure devices via PECVD technique: Morphological, structural, and electrical properties

“…The other methods such as physical vapor deposition and chemical vapor deposition (CVD) are the dry processing techniques. Among CVD techniques, efficient plasma-enhanced chemical vapor deposition (PECVD) synthesizes chemically inert, mechanically tough, and thermally stable PANI thin films 13,14 and is an effective alternative to other polymerization techniques like chemical synthesis and sol-gel process. It is believed that the careful control of the plasma polymerization parameters results to well distributed and uniform PANI thin films.…”