Hot-electron reliability improvement using perhydropolysilazane spin-on-dielectric passivation buffer layers for AlGaN/GaN HEMTs

Iqbal, Mustazar; Ko, Pil-Seok; Kim, Sam-Dong

doi:10.1016/j.cap.2014.05.014

Cited by 9 publications

(4 citation statements)

References 18 publications

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“…This process will eventually reduce the conductance of channel and drain-to-source current ( I ds ) in dark conditions. The Schottky gate (Ni/Au) HEMTs (2 µm gate length, 100 µm gate width) fabricated in our group using the same epitaxial structure and Si 3 N 4 passivation showed a threshold voltage ( V TH ) of ~−3 V [29]. This result demonstrates that our HEMT devices with an Au/Ni gate electrode are normally on at zero gate voltage V gs (depletion-mode).…”

Section: Sensing Mechanismmentioning

confidence: 79%

High-Performance Ultraviolet Light Detection Using Nano-Scale-Fin Isolation AlGaN/GaN Heterostructures with ZnO Nanorods

Khan

Kim

2019

Nanomaterials

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Owing to their intrinsic wide bandgap properties ZnO and GaN materials are widely used for fabricating passive-type visible-blind ultraviolet (UV) photodetectors (PDs). However, most of these PDs have a very low spectral responsivity R, which is not sufficient for detecting very low-level UV signals. We demonstrate an active type UV PD with a ZnO nanorod (NR) structure for the floating gate of AlGaN/GaN high electron mobility transistor (HEMT), where the AlGaN/GaN epitaxial layers are isolated by the nano-scale fins (NFIs) of two different fin widths (70 and 80 nm). In the dark condition, oxygen adsorbed at the surface of the ZnO NRs generates negative gate potential. Upon UV light illumination, the negative charge on the ZnO NRs is reduced due to desorption of oxygen, and this reversible process controls the source-drain carrier transport property of HEMT based PDs. The NFI PDs of a 70 nm fin width show the highest R of a ~3.2 × 107 A/W at 340 nm wavelength among the solid-state UV PDs reported to date. We also compare the performances of NFI PDs with those of conventional mesa isolation (MI, 40 × 100 µm2). NFI devices show ~100 times enhanced R and on-off current ratio than those of MI devices. Due to the volume effect of the small active region, a much faster response speed (rise-up and fall-off times of 0.21 and 1.05 s) is also obtained from the NFI PDs with a 70 nm fin width upon the UV on-off transient.

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Section: Sensing Mechanismmentioning

confidence: 79%

High-Performance Ultraviolet Light Detection Using Nano-Scale-Fin Isolation AlGaN/GaN Heterostructures with ZnO Nanorods

Khan

Kim

2019

Nanomaterials

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“…However, in most PECVD processes, the surface states at the interface of passivation caused by plasma damage can critically affect the device performance and reliability [3][4][5]. Although the conventional passivation with SiO 2 or Si 3 N 4 can alleviate the surface effect responsible for current collapse and electron trapping in surface states [5,6], the density of interface states is influenced by the deposition method, process recipe, and surface treatment [6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

“…Demonstration of a spin-on-dielectric (SOD) SiO x -buffered passivation structure for AlGaN/GaN high electron mobility transistor (HEMT) fabrication was reported with significant improvements in both static dc current level and hot-electron reliability compared to the conventional PECVD Si 3 N 4 passivation structure [3,4]. In this paper, we report extensive investigation of a buffered passivation structure in association with the quantitative analysis of interface defects in the passivation interfaces and propose the possible mechanism responsible for the improved dc performance compared to the conventional PECVD Si 3 N 4 passivation structure.…”

Section: Introductionmentioning

confidence: 99%

Interface characteristics of spin-on-dielectric SiOx-buffered passivation layers for AlGaN/GaN high electron mobility transistors

Park

Yoon

et al. 2015

Thin Solid Films

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“…ß 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 1 Introduction GaN-based high electron mobility transistors (HEMTs) are attractive as high-frequency and -power devices on account of their excellent physical properties [1]. Because undoped GaN layers contain residual donor type impurities and defects, the GaN layers show an ntype conductivity [2].…”

mentioning

confidence: 99%

Characterization of high electron mobility transistor fabricated on hydride vapor phase epitaxy‐grown GaN templates containing various Fe concentrations

Sugimoto

Nishihira

Arita

et al. 2017

Phys. Status Solidi C

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An AlGaN/GaN high electron mobility transistor (HEMT) structure was grown on a semi‐insulating (SI) GaN layer or substrate to suppress a leakage current and achieve a high breakdown voltage. Fe can be used as doping material to obtain SI‐GaN. However, the relationship between the Fe concentration in the GaN layers and its influence on HEMT characteristics has not yet been investigated. In this study, we therefore investigated the influence of Fe concentration in the GaN layers on HEMT characteristics. The GaN layers containing several Fe concentrations were grown by hydride vapor phase epitaxy (HVPE). The Fe concentration was varied from 3 × 1017 to 3 × 1020 atoms cm−3. It was determined that the source‐drain current (IDS) decreased as the Fe concentration increased. In the case of a low Fe concentration of 3 × 1017 atoms cm−3, IDS was almost the same as that of HEMT on the non‐Fe‐doped GaN template. Thus, HEMT characteristics deteriorated as the Fe concentration increased. The channel layer played a role in blocking the adverse effects of Fe doping on the two‐dimensional electron gas concentration in AlGaN/GaN. Moreover, it was shown that the GaN channel layer must become thicker as the Fe concentration of the GaN layers increases.

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Hot-electron reliability improvement using perhydropolysilazane spin-on-dielectric passivation buffer layers for AlGaN/GaN HEMTs

Cited by 9 publications

References 18 publications

High-Performance Ultraviolet Light Detection Using Nano-Scale-Fin Isolation AlGaN/GaN Heterostructures with ZnO Nanorods

High-Performance Ultraviolet Light Detection Using Nano-Scale-Fin Isolation AlGaN/GaN Heterostructures with ZnO Nanorods

Interface characteristics of spin-on-dielectric SiOx-buffered passivation layers for AlGaN/GaN high electron mobility transistors

Characterization of high electron mobility transistor fabricated on hydride vapor phase epitaxy‐grown GaN templates containing various Fe concentrations

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