Hot‐electron microwave noise and power dissipation in AlGaN/AlN/GaN channels for HEMTs

Matulionis, A.; Liberis, J.; Ramonas, M.; Matulionien, I.; Eastman, L.F.; Vertiatchikh, A.; Chen, X.; Sun, Yuejin

doi:10.1002/pssc.200461374

Cited by 24 publications

(52 citation statements)

References 20 publications

(25 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Let us introduce equivalent occupancy of the hot-phonon modes N ph and express the power dissipated by an average electron as follows [18]:…”

Section: Experimental Techniquementioning

confidence: 99%

Ultrafast decay of non‐equilibrium (hot) phonons in GaN‐based 2DEG channels

Matulionis¹

2009

Phys. Status Solidi (c)

View full text Add to dashboard Cite

Fast and ultrafast decay of non‐equilibrium longitudinal optical phonons (hot phonons) is discussed on examples of two‐dimensional electron gas (2DEG) channels confined in nominally‐undoped nitride and selectivelydoped arsenide heterostructures subjected to pulsed dc electric power. At a low–moderate power, a nonmonotonous dependence of the hot‐phonon lifetime on the 2DEG density is found. The fastest decay takes place at ∼2.5 × 1012 cm–2 in GaInAs 2DEG channel and at ∼7 × 1012 cm–2 in GaN 2DEG channel. The result is discussed in terms of plasmon–LO‐phonon resonance. The hot‐phonon lifetime decreases when the supplied power is increased if the 2DEG density exceeds the resonance density. The shortest hot‐phonon lifetime of 60 fs is obtained at/above 50 nW/electron for the lattice‐matched AlInN/AlN/GaN 2DEG channel (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

“…Let us introduce equivalent occupancy of the hot-phonon modes N ph and express the power dissipated by an average electron as follows [18]:…”

Section: Experimental Techniquementioning

confidence: 99%

Ultrafast decay of non‐equilibrium (hot) phonons in GaN‐based 2DEG channels

Matulionis¹

2009

Phys. Status Solidi (c)

View full text Add to dashboard Cite

show abstract

“…From the hot-electron noise technique, the hot-phonon lifetime was reported to be ∼0.5 ps for AlN/GaN 2DEG channels at 80 K [10] and ∼0.36 ps for AlGaN/AlN/GaN at room temperature [11]. A comparable value of 0.29 ps was reported from the time-resolved pump-probe optical experiment for bulk GaN [24] at room temperature.…”

Section: Introductionmentioning

confidence: 54%

“…Hot-electron effects are determined by electron-phonon interaction mechanisms and can provide valuable information about the nature of transport properties of eleca e-mail: sibelgokden@gmail.com tronic systems of modern semiconductors [8]. The hotelectron transport in nitrides has been studied using different electronic and optical based techniques: Microwave noise [9][10][11][12][13], Shubnikov-de Haas magnetoresistance [14][15][16], and Pumb-probe Raman spectroscopy [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Energy relaxations of hot electrons in AlGaN/AlN/GaN heterostructures grown by MOCVD on sapphire and 6H-SiC substrates

Ilgaz

Gökden

Tülek

et al. 2011

Eur. Phys. J. Appl. Phys.

View full text Add to dashboard Cite

Abstract. In this work, we investigated the hot-electron dynamics of AlGaN/GaN HEMT structures grown by MOCVD on sapphire and SiC substrates at 80 K. High-speed current-voltage measurements and Hall measurements over the temperature range 27-300 K were used to study hot-electron dynamics. At low fields, drift velocity increases linearly, but deviates from the linearity toward high electric fields. Drift velocities are deduced as approximately 6.55 × 10 6 and 6.60 × 10 6 cm/s at an electric field of around E ∼ 25 kV/cm for samples grown on sapphire and SiC, respectively. To obtain the electron temperature as a function of the applied electric field and power loss as a function of the electron temperature, we used the so-called mobility comparison method with power balance equations. Although their low field carrier transport properties are similar as observed from Hall measurements, hot carrier energy dissipation differs for samples grown on sapphire and SiC substrates. We found that LO-phonon lifetimes are 0.50 ps and 0.32 ps for sapphire and SiC substrates, respectively. A long hot-phonon lifetime results in large nonequilibrium hot phonons. Non-equilibrium hot phonons slow energy relaxation and increase the momentum relaxation. The effective energy relaxation times at high fields are 24 and 65 ps for samples grown on sapphire and SiC substrates, respectively. They increase as the electron temperature decreases.

show abstract

“…1 show the hot-electron temperature measured for an AlGaN/AlN/GaN 2DEG channel by noise technique [2]. A good agreement with optical experiments is observed (H bar [3] and stars [4]).…”

mentioning

confidence: 50%

Plasmon-assisted power dissipation in GaN-based 2DEG channels for power HFETs

Matulionis¹,

Liberis²,

Matulionienė³

et al. 2007

2007 International Semiconductor Device Research Symposium

Self Cite

View full text Add to dashboard Cite

A nitride heterostructure field-effect transistor (HFET) is among the most promising hf power devices. A two-dimensional electron gas (2DEG) channel for the HFET contains a high density of electrons and operates at high electric fields. The main path of power dissipation emission of longitudinal optical (LO) phonons by hot electrons, the nonequilibrium (hot) LO phonons convert into acoustic modes, and the acoustic phonons drain the heat out of the channel. The conversion of hot phonons into acoustic modes is the "bottleneck". A faster conversion would reduce hot-phonon effects and improve frequency performance of the channel. The report discusses the plasmon-assisted hot-phonon conversion in GaN-based 2DEG channels. The experimental technique exploits hot-electron fluctuations [1] -they serve as "fingerprints" of the ultrafast processes of power dissipation.

show abstract

Hot‐electron microwave noise and power dissipation in AlGaN/AlN/GaN channels for HEMTs

Cited by 24 publications

References 20 publications

Ultrafast decay of non‐equilibrium (hot) phonons in GaN‐based 2DEG channels

Ultrafast decay of non‐equilibrium (hot) phonons in GaN‐based 2DEG channels

Energy relaxations of hot electrons in AlGaN/AlN/GaN heterostructures grown by MOCVD on sapphire and 6H-SiC substrates

Plasmon-assisted power dissipation in GaN-based 2DEG channels for power HFETs

Contact Info

Product

Resources

About