Plasmon-assisted power dissipation in GaN-based 2DEG channels for power HFETs

Matulionis, A.; Liberis, J.; Matulionienė, I.; Ramonas, M.; Šermukšnis, E.

doi:10.1109/isdrs.2007.4422376

Cited by 3 publications

(7 citation statements)

References 18 publications

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“…15 For standard GaN-based channels, the resonance 2DEG density is near 6.5 Â 10 12 cm À2 at low electric fields, but the resonance shifts towards higher 2DEG densities as the hot-electron temperature increases. 10,16 In voltage-biased channels, the hot electrons spread over a larger volume, the plasma frequency decreases, and the resonance is observed at higher 2DEG densities: 9.5 Â 10 12 cm À2 , 13 1 Â 10 13 cm À2 , 15 and (1.1-1.2) Â 10 13 cm À2 . 14 These resonance values are lower than the achievable 3 Â 10 13 cm À2 , and no benefit from the LO-phonon-plasmon resonance is expected in the standard GaN-based channels at these highest 2DEG densities.…”

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“…The squares 16 (Fig. 3, inset) illustrate the density dependence of the LO-phonon lifetime at low fields for the standard GaN-based single channels at electron densities above the resonance value.…”

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“…1), the LO-phonon-plasmon resonance can be tuned electrically. 10,16 Figure 4 illustrates the LO-phonon lifetime as a function of the excess noise temperature. The results for the camelback channel (circles) are compared with those available for the reference channel (squares 10 ).…”

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Camelback channel for fast decay of LO phonons in GaN heterostructure field-effect transistor at high electron density

Šermukšnis

Liberis

Ramonas

et al. 2011

Applied Physics Letters

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Fluctuation technique is used to measure hot-phonon lifetime in dual channel GaN-based configuration proposed to support high-power operation at high frequencies. The channel is formed of a composite Al0.1Ga0.9N/GaN structure situated in an Al0.82In0.18N/AlN/Al0.1Ga0.9N/GaN heterostructure. According to capacitance–voltage measurements and simultaneous treatment of Schrödinger–Poisson equations, the mobile electrons in this dual channel configuration form a camelback density profile at elevated hot-electron temperatures. The hot-phonon lifetime was found to depend on the shape of the electron profile rather than solely on its sheet density. The camelback channel with an electron sheet density of 1.8 × 1013 cm−2 demonstrates ultrafast decay of hot phonons at hot-electron temperatures above 600 K: the hot-phonon lifetime is below ∼60 fs in contrast to ∼600 fs at an electron sheet density of 1.2 × 1013 cm−2 obtained in a reference Al0.82In0.18N/AlN/GaN structure at 600 K. The results suggest a suitable method to increase the electron sheet density without the deleterious effect caused by inefficient hot-phonon decay observed in a standard design at similar electron densities.

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Camelback channel for fast decay of LO phonons in GaN heterostructure field-effect transistor at high electron density

Šermukšnis

Liberis

Ramonas

et al. 2011

Applied Physics Letters

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“…1. 15,16 When the lifetime of these hot phonons is long enough, a buildup of hot phonons occurs, in turn causing additional scattering, 17 and degrading device performance. In less ionic semiconductors with reduced electron phonon coupling, hot electrons are able to lose energy directly to longitudinal acoustic ͑LA͒ phonons.…”

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Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons

Leach

Zhu

et al. 2009

Applied Physics Letters

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We report on high electric field stress measurements at room temperature on InAlN/AlN/GaN heterostructure field effect transistor structures. The degradation rate as a function of the average electron density in the GaN channel (as determined by gated Hall bar measurements for the particular gate biases used), has a minimum for electron densities around 1×1013 cm−2, and tends to follow the hot phonon lifetime dependence on electron density. The observations are consistent with the buildup of hot longitudinal optical phonons and their ultrafast decay at about the same electron density in the GaN channel. In part because they have negligible group velocity, the build up of these hot phonons causes local heating, unless they decay rapidly to longitudinal acoustic phonons, and this is likely to cause defect generation which is expected to be aggravated by existing defects. These findings call for modified approaches in modeling device degradation.

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“…Very recently, Ramonas et al have studied hot phonon effect on power dissipation in a biased AlGaN / AlN / GaN channel. [25][26][27] The theoretical framework used in this paper is similar to that of Ref. 25, except that we take into account the e-e interaction.…”

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Hot-electron dynamics and terahertz generation in GaN quantum wells in the streaming transport regime

Cao

Feng

2006

Phys. Rev. B

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We study hot-electron transport and the dynamic negative differential conductivity in a GaN / AlGaN quantum well by using the Monte Carlo method. We find that the electron-electron interaction, the nonequilibrium polar optical phonon, and the electron gas degeneracy may influence the electron transport property and destroy the spindle-shaped distribution in the streaming transport regime. Our simulation results suggest that the hot phonon effect, and the electron gas degeneracy are more important in the determination of electron steady state velocity-field characteristics, while the electron-electron interaction is dominant in the disturbance of the electron periodic motion. We conclude that terahertz generation using the electron dynamic negative differential conductivity is only possible at relatively low electron density before the electron-electron interaction steps into role.

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Plasmon-assisted power dissipation in GaN-based 2DEG channels for power HFETs

Cited by 3 publications

References 18 publications

Camelback channel for fast decay of LO phonons in GaN heterostructure field-effect transistor at high electron density

Camelback channel for fast decay of LO phonons in GaN heterostructure field-effect transistor at high electron density

Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons

Hot-electron dynamics and terahertz generation in GaN quantum wells in the streaming transport regime

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