Hot electron energy loss rates in GaAs/GaAlAs multiple quantum wells: effects of finite barrier height and well width

Suresha, Kasala; Kubakaddi, S. S.; Mulimani, B. G.

doi:10.1016/j.physe.2003.10.008

Cited by 6 publications

(5 citation statements)

References 26 publications

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“…It is observed that, energy loss rate decreases with increase in well width. The same behavior was also observed in GaAs [20], GaN, GaInAs quantum wells. Our calculations in figure 2 show a very similar trend for 2D GaAs quantum wells.…”

Section: IIsupporting

confidence: 79%

Hot Electron Transport in Two-dimensional SiGe/Si Quantum Wells

Suresha¹

2023

IJRASET

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The hot carrier energy loss rate in a two-dimensioal electron gas in SiGe/Si quantum well has been theoretically studied and carrier concentration ranging from 1.0x1012 to 5.0x1014 m-2. The energy loss rate in this highly non-parabolic system is dominated by acoustic deformation potential scattering, whereas the acoustic piezoelectric scattering is negligible. We also studied variation of energy loss rate with thickness of various quantum wells

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Section: IIsupporting

confidence: 79%

Hot Electron Transport in Two-dimensional SiGe/Si Quantum Wells

Suresha¹

2023

IJRASET

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“…It may be noted that owing to the extension of the wavefunction into the barrier layers, the effective mass of the electron in the barrier layers varies with composition, x of barrier material as: m b = (0.22-0.105x). 6,16 We take n s = 1 × 10 16 m −2 , for which E F = 22 meV and the electrons are confined to the lowest subband.…”

Section: Resultsmentioning

confidence: 99%

“…Barrier penetration effects on carrier scattering and transport have been investigated. [2][3][4][5][6] Considering a 2DEG in a QW to be confined by finite barriers, Gold and coworkers 2 have obtained analytical expressions and studied the influence of finite barriers on transport properties for impurity scattering, alloy scattering and interface roughness scattering. Nag and coworkers 4,5 have investigated the influence in narrow quantum wells on the form factor and effective mass and have shown that the values of electron mobility in narrow quantum wells are significantly different from those in wide quantum wells.…”

Section: Introductionmentioning

confidence: 99%

“…5 Incorporating the finite barrier height and screened electron-phonon interaction, Suresha et al have analysed experimental energy loss rates data in GaAs/AlGaAs multiple quantum wells. 6 Thermopower, (TP), which is sensitive to the composition and structure of the system, is an interesting and important transport property for study in finite QW structures. It provides information about the interaction of electrons and phonons, impurities and other defects in a system.…”

Section: Introductionmentioning

confidence: 99%

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Barrier penetration effects on thermopower in semiconductor quantum wells

2014

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Finite confinement effects, due to the penetration of the electron wavefunction into the barriers of a square well potential, on the low-temperature acoustic-phonon-limited thermopower (TP) of 2DEG are investigated. The 2DEG is considered to be scattered by acoustic phonons via screened deformation potential and piezoelectric couplings. Incorporating the barrier penetration effects, the dependences of diffusion TP and phonon drag TP on barrier height are studied. An expression for phonon drag TP is obtained. Numerical calculations of temperature dependences of mobility and TP for a 10 nm InN/In x Ga 1−x N quantum well for different values of x show that the magnitude and behavior of TP are altered. A decrease in the barrier height from 500 meV by a factor of 5, enhances the mobility by 34% and reduces the TP by 58% at 20 K.

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“…In seeking for a variational scheme more accurate and flexible than the previous ones [9,[12][13][14][15], we included a 2nd-degree term in the part of the variational wavefunction for − < z < + (i.e., into the InGaAs channel), as given by…”

Section: Modelmentioning

confidence: 99%

Limitation of electron mobility in modulation-doped In0.53Ga0.47As/InP quantum wells at low temperatures

Lima¹,

Veloso²,

Fonseca³

et al. 2006

Braz. J. Phys.

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The low-temperature electron mobility is investigated here for electrons confined in modulation-doped In 0.53 Ga 0.47 As/InP single symmetric quantum wells. The subband structure calculation is developed via variational method, both Schrödinger and Poisson equations being solved simultaneously with adequate heterointerface matching conditions. With this in hands, the main electron scattering rates are computed, namely alloy disorder, remote ionized impurity, and interface roughness. As a result, interesting interchanges in these scattering rates were found by varying the well width and the spacer width, which show that some scattering mechanisms can surpass the alloy disorder scattering rate and come to limit the electron mobility, a behavior not reported in the literature.

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Hot electron energy loss rates in GaAs/GaAlAs multiple quantum wells: effects of finite barrier height and well width

Cited by 6 publications

References 26 publications

Hot Electron Transport in Two-dimensional SiGe/Si Quantum Wells

Hot Electron Transport in Two-dimensional SiGe/Si Quantum Wells

Barrier penetration effects on thermopower in semiconductor quantum wells

Limitation of electron mobility in modulation-doped In0.53Ga0.47As/InP quantum wells at low temperatures

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