Hot Electron Transport in Two-dimensional SiGe/Si Quantum Wells

Abstract

The hot carrier energy loss rate in a two-dimensioal electron gas in SiGe/Si quantum well has been theoretically studied and carrier concentration ranging from 1.0x1012 to 5.0x1014 m-2. The energy loss rate in this highly non-parabolic system is dominated by acoustic deformation potential scattering, whereas the acoustic piezoelectric scattering is negligible. We also studied variation of energy loss rate with thickness of various quantum wells