1998
DOI: 10.1063/1.122606
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Hot electron emission lithography

Abstract: We have developed an electron lithography method, hot electron emission lithography, which is capable of printing integrated circuits with an exposure time of only a few seconds. The basic design and fabrication of the patterned electron emitting mask made by standard metal–oxide–semiconductor technology will be discussed, and its applicability in a simple 1:1 e-beam stepper will be demonstrated. Patterns with a minimum feature size of 160 nm have been printed successfully. Further improvements in resolution t… Show more

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Cited by 11 publications
(4 citation statements)
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“…Planar metal-oxide-semiconductor (MOS) electron emission devices have excellent attributes, such as a low driving voltage, they function at low , and atmospheric pressures , and in liquids, and have a low divergence angle for the electron beam . Several practical applications have been proposed, including in field emission displays, , in highly sensitive image sensors, and for electron beam lithography systems. The electron emission source plays a critical role in the performance of electron microscopy setups, such as scanning electron microscopes (SEM), transmission electron microscopes (TEM), and electron beam lithography. Compared with Schottky-type electron sources and tungsten field emitters, MOS-type electron emission devices are disadvantaged by their broad emitted electron energy spread.…”
Section: Introductionmentioning
confidence: 99%
“…Planar metal-oxide-semiconductor (MOS) electron emission devices have excellent attributes, such as a low driving voltage, they function at low , and atmospheric pressures , and in liquids, and have a low divergence angle for the electron beam . Several practical applications have been proposed, including in field emission displays, , in highly sensitive image sensors, and for electron beam lithography systems. The electron emission source plays a critical role in the performance of electron microscopy setups, such as scanning electron microscopes (SEM), transmission electron microscopes (TEM), and electron beam lithography. Compared with Schottky-type electron sources and tungsten field emitters, MOS-type electron emission devices are disadvantaged by their broad emitted electron energy spread.…”
Section: Introductionmentioning
confidence: 99%
“…Planar-type electron sources based on a metal-oxide-semiconductor structure (MOS) can be operated at low vacuum, low voltage, and room temperature conditions [14][15][16][17], and 3 emit electron beams with small divergence angles [18]. Although these features are advantageous for the several applications, such as low-cost, high-resolution electron microscopes, highly sensitive image sensors [19], field emission displays [20], and electron beam lithography [21,22], they have a very low electron emission efficiency of 0.002 % [16].…”
mentioning
confidence: 99%
“…An array of tips as shown in figure 4(d) leads to a high density of almost atomically sharp tips, which can be used to fabricate hot-electron emitters producing very high currents from small areas. Moreover, it is envisioned that such tips might be used in nanolithography using hot-electron emission [7] or by the millipede concept [8].…”
Section: Resultsmentioning
confidence: 99%