Hot Electron Emission Lithography: a method for efficient large area e-beam projection

Poppeller, M.; Cartier, E.; Tromp, R. M.

doi:10.1016/s0167-9317(99)00058-1

Cited by 6 publications

(4 citation statements)

References 9 publications

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“…Planar metal-oxide-semiconductor (MOS) electron emission devices − have excellent attributes, such as a low driving voltage, they function at low , and atmospheric pressures , and in liquids, − and have a low divergence angle for the electron beam . Several practical applications have been proposed, including in field emission displays, , in highly sensitive image sensors, − and for electron beam lithography systems. − The electron emission source plays a critical role in the performance of electron microscopy setups, such as scanning electron microscopes (SEM), transmission electron microscopes (TEM), and electron beam lithography. Compared with Schottky-type electron sources and tungsten field emitters, MOS-type electron emission devices are disadvantaged by their broad emitted electron energy spread.…”

Section: Introductionmentioning

confidence: 99%

Highly Monochromatic Electron Emission from Graphene/Hexagonal Boron Nitride/Si Heterostructure

Murakami

Igari

Mitsuishi

et al. 2019

ACS Appl. Mater. Interfaces

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In this work, a planar electron emission device based on a graphene/hexagonal boron nitride (h-BN)/n-Si heterostructure is fabricated to realize highly monochromatic electron emission from a flat surface. The h-BN layer is used as an insulating layer to suppress electron inelastic scattering within the planar electron emission device. The energy spread of the emission device using the h-BN insulating layer is 0.28 eV based on the full-width at half-maximum (FWHM), which is comparable to a conventional tungsten field emitter. The characteristic spectral shape of the electron energy distributions reflected the electron distribution in the conduction band of the n-Si substrate. The results indicate that the inelastic scattering of electrons at the insulating layer is drastically suppressed by the h-BN layer. Furthermore, the maximum emission current density reached 2.4 A/cm2, which is comparable to that of a conventional thermal cathode. Thus, the graphene/h-BN heterostructure is a promising material for planar electron emission devices to obtain a highly monochromatic electron beam and a high electron emission current density.

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Section: Introductionmentioning

confidence: 99%

Highly Monochromatic Electron Emission from Graphene/Hexagonal Boron Nitride/Si Heterostructure

Murakami

Igari

Mitsuishi

et al. 2019

ACS Appl. Mater. Interfaces

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“…15 Furthermore the turn-on and turn-off rates of the MOS electron emitters are only limited by the resistance capacitance ͑RC͒ product of the devices. MOS electron emitters will theoretically have no outgassing, generate no significant amount of heat, they can be made extremely small, and be operated under a wide range of conditions.…”

Section: Introductionmentioning

confidence: 99%

Electron emission from ultralarge area metal-oxide-semiconductor electron emitters

Thomsen¹,

Nielsen²,

Vendelbo³

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inThe effects of the in-plane momentum on the quantization of nanometer metal-oxide-semiconductor devices due to the difference between the effective masses of silicon and gate oxide Appl. Phys. Lett. 91, 123519 (2007); 10.1063/1.2789733 Polysilicon metal-insulator-semiconductor electron emitter Determination of electron trap distribution in the gate-oxide region of the deep submicron metal-oxide-semiconductor structure from direct tunneling gate current Effective lifetime of electrons trapped in the oxide of a metal-oxide-semiconductor structure Appl. Phys. Lett. 75, 522 (1999); 10.1063/1.124435Hot electron impact excitation cross-section of Er 3+ and electroluminescence from erbium-implanted silicon metal-oxide-semiconductor tunnel diodes Ultralarge metal-oxide-semiconductor ͑MOS͒ devices with an active oxide area of 1 cm 2 have been fabricated for use as electron emitters. The MOS structures consist of a Si substrate, a SiO 2 tunnel barrier ͑ϳ5 nm͒, a Ti wetting layer ͑3-10 Å͒, and a Au top layer ͑5-60 nm͒. Electron emission from the Au metal layer to vacuum is realized from these devices by applying bias voltages larger than the work function of the Au layer. The emission is characterized for Au layers with thicknesses ranging from 5 to 60 nm nominally. The emission efficiency changes from close to 10 −6 to 10 −10 . The Ti wetting layer is varied from 3 to 10 Å which changes the emission efficiency by more than one order of magnitude. The apparent mean free path of ϳ5 eV electrons in Au is found to be 52 Å. Deposition of Cs on the Au film increased the electron emission efficiency to 4.3% at 4 V by lowering the work function. Electron emission under high pressures ͑up to 2 bars͒ of Ar was observed.

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“…10 It has previously been proposed by Gadzuk [11][12][13][14] that hot electrons injected from the substrate into the gate in metal-insulator-metal tunnel devices, and thus similar MOS based devices, can be used to enhance surface reactivity on the surface of the ultrathin gate metal. This phenomenon has been investigated experimentally by several groups.…”

Section: Introductionmentioning

confidence: 99%

“…[15][16][17][18][19] In HEEL, a MOS electron emitter is used as a combined electron source and mask to illuminate an electron sensitive polymer resist. 10 The patterning is achieved by forming the tunnel oxide or gate metal as a 1:1 mapping of the pattern to be transferred to the substrate. In this way, electron beam lithography can be combined with the massive parallelism known from standard UV lithography.…”

Section: Introductionmentioning

confidence: 99%

Ultralarge area MOS tunnel devices for electron emission

et al. 2007

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A comparative analysis of metal-oxide-semiconductor ͑MOS͒ capacitors by capacitance-voltage ͑C-V͒ and current-voltage ͑I-V͒ characteristics has been employed to characterize the thickness variations of the oxide on different length scales. Ultralarge area ͑1 cm 2 ͒ ultrathin ͑ϳ5 nm oxide͒ MOS capacitors have been fabricated to investigate their functionality and the variations in oxide thickness, with the use as future electron emission devices as the goal. I-V characteristics show very low leakage current and excellent agreement to the FowlerNordheim expression for the current density. Oxide thicknesses have been extracted by fitting a model based on Fermi-Dirac statistics to the C-V characteristics. By plotting I-V characteristics in a Fowler plot, a measure of the thickness of the oxide can be extracted from the tunnel current. These apparent thicknesses show a high degree of correlation to thicknesses extracted from C-V characteristics on the same MOS capacitors, but are systematically lower in value. This offset between the thicknesses obtained by C-V characteristics and I-V characteristics is explained by an inherent variation of the oxide thickness. Comparison of MOS capacitors with different oxide areas ranging from 1 cm 2 to 10 m 2 , using the slope from Fowler-Nordheim plots of the I-V characteristics as a measure of the oxide thickness, points toward two length scales of oxide thickness variations being ϳ1 cm and ϳ10 m, respectively.

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Hot Electron Emission Lithography: a method for efficient large area e-beam projection

Cited by 6 publications

References 9 publications

Highly Monochromatic Electron Emission from Graphene/Hexagonal Boron Nitride/Si Heterostructure

Highly Monochromatic Electron Emission from Graphene/Hexagonal Boron Nitride/Si Heterostructure

Electron emission from ultralarge area metal-oxide-semiconductor electron emitters

Ultralarge area MOS tunnel devices for electron emission

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