Hot carrier photovoltaic effect induced by 10.6 μm laser radiation in Ge and PAsGa junctions

Abstract

The observation of CO2 (10.6 μm wavelength) laser-induced photoeffects in Ge and PAsGa junctions is reported. A moderately nonlinear low laser excitation intensity regime and a strongly nonlinear high laser excitation intensity behavior are observer in Ge junctions as was previously reported in Si junctions. Two strongly nonlinear behaviors are observed in PAsGa junctions. A opposite sign prepulse is also observed as in Si junctions. The observation of the same photoeffects in three different materials is proof of the universal character of the studied phenomenon. A interpretation on the basis of a hot carrier plasma model is discussed.

Terahertz strong-field physics in light-emitting diodes for terahertz detection and imaging

“…Therefore, the decay time of all examined LEDs were in a similar time scale (~1 ns), as extracted in the experiments. In terms of the comparison of amplitude for distinct LEDs, early works focused on the nanosecond far infrared laser pumped photodiodes showed lager photoresponse when the bandgap of material is smaller 37 . Nonetheless, we didn't observe such simple law in the current system that many ingredients needed to be taken into account which may impact on the performance of LEDs profoundly, such as the junction depth and the doping level 38 .…”