Hot carrier electromotive force caused by surface potential modulation in a strong microwave field

Modeling the Temperature Dependence of Shubnikov-De Haas Oscillations in Light-Induced Nanostructured Semiconductors

“…Here, A 1 , A 2 are constant coefficients independent of frequency. It follows that, using (8), ( 9), (10) and (11) to determine the Fermi quantum levels (7) of heterostructures with ptype quantum wells, the following new analytical expression is derived:…”

“…Currently, the fundamental physical parameters of several new small-scale materials, including semiconductors and crystals, are being studied. Among them are thin films, nanotubes and two-dimensional (2D) structures [1][2][3][4][5][6][7][8][9][10]. In particular, quantum oscillation effects under the influence of a magnetic field and electromagnetic waves (light) have been observed in several new classes of narrow band quantum well heterostructures, for example, oscillations of transverse and longitudinal magnetoresistance, Shubnikov-de Haas oscillations and quantum Hall effects [11][12][13][14][15][16][17][18][19][20].…”

Influence of Deformation on CVC p-n-Junction in a Strong Microwave Field

“…EMF of hot carriers U oc , generated at unsymmetrical p-n-junction in the microwave electromagnetic field, despite the fact that the electron temperature much higher than that of the holes is determined by the hot holes [5]. In [6] theoretically studied the effect of lattice heating on the kinetics of the establishment of the thermopower of hot carriers in the p-n-junction. It is shown that the heating of the lattice leads to an additional third stage of establishing thermoelectric current and thermopower of hot carriers with a relaxation time determined by the thermal conductivity and heat capacity of the sample.…”

“…It is shown that the heating of the lattice leads to an additional third stage of establishing thermoelectric current and thermopower of hot carriers with a relaxation time determined by the thermal conductivity and heat capacity of the sample. In [7] studied the effect of distortion of the heating wave on the recombination currents and electromotive force generated at the p-n-junction in a strong microwave field. It is shown that high-frequency perturbation of the surface potential and the height of the p-n-junction in the mode of the short circuit current decreases the effective barrier height, and idling to anomalously large values of the EMF.…”

“…Thus, the microwave and the deformation from different sides excites semiconductor systems, from the electron-hole and phonon system. Investigation using the microwave [1]- [7] and the variable deformation [8]- [10] allows two different sides examine the semiconductor structure.…”