Hot carrier effect and PBTI of a thin-film SOI power MOSFET at high temperature

Abstract

This paper describes the hot carrier effect and positive bias temperature instability (PBTI), of a thin-film SOI power MOSFET at high temperature. The device degradation, which is caused by hot carrier effect and PBTI, depends on temperature. Device degradation is different for stress gate bias condition. Device degradation caused by hot carrier effect occurs at lower stress gate voltage and caused by PBTI occurs at higher stress gate voltage. Degradation of the on-resistance reduces as temperature increases at lower gate stress voltage. Threshold voltage shift shows the maximum when temperature is 473 K at lower stress gate voltage. Degradation of on-resistance enhances and threshold voltage shift increase with increasing temperature at higher stress gate voltage.