Horizontal current bipolar transistor (HCBT): a new concept of silicon bipolar transistor technology

Biljanović, Petar; Suligoj, Tomislav

doi:10.1109/16.960381

Cited by 10 publications

(4 citation statements)

References 5 publications

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“…Fig. 2 shows the fabrication sequence for the proposed lateral PNM SCBT [2], [6]. After mesa isolation by epi-etching, a thick CVD oxide (LTO) is deposited and patterned as shown in Fig.…”

Section: Device Structure and Parametersmentioning

confidence: 99%

“…This advantage of the BJT coupled with the inherent isolation available for the SOI devices led to the emergence of SOI based BiCMOS technologies where both BJTs and MOSFETs are fabricated on the same chip. However, to reduce the complexity of BiCMOS processes, which employ expensive double polysilicon complementary technologies, and also to minimize the disadvantages associated with the conventional vertical current concept [2], lateral bipolar transistors are being studied extensively [3]- [8].…”

Section: Introductionmentioning

confidence: 99%

“…Many hot-carrier phenomena can be described adequately only by self-consistent (SC) Monte Carlo (MC) device simulation [1], [2]. Unfortunately, this method is very CPU intensive and approximations have been developed like the nonself-consistent (NSC) MC method for the steady-state where the electric field is calculated by a momentum-based…”

Section: Introductionmentioning

confidence: 99%

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A new lateral PNM Schottky collector bipolar transistor (SCBT) on SOI for nonsaturating VLSI logic design

Kumar

Rao

2002

IEEE Trans. Electron Devices

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The novel characteristics of a new lateral PNM Schottky collector bipolar transistor (SCBT) on silicon-on-insulator (SOI) are explored using two-dimensional (2-D) simulation. The collector-base junction of the proposed lateral PNM transistor consists of a Schottky junction between n-base (N) and metal (M). The characteristics of this structure are compared with that of lateral PNP transistors on SOI. We demonstrate that the proposed structure has a superior performance in terms of reduced collector resistance, high current gain, negligible base widening, and very low reverse recovery time compared to the compatible lateral PNP transistors. A simple fabrication procedure is also suggested providing the incentive for experimental verification.

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“…Fig. 2 shows the fabrication sequence for the proposed lateral PNM SCBT [2], [6]. After mesa isolation by epi-etching, a thick CVD oxide (LTO) is deposited and patterned as shown in Fig.…”

Section: Device Structure and Parametersmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A new lateral PNM Schottky collector bipolar transistor (SCBT) on SOI for nonsaturating VLSI logic design

Kumar

Rao

2002

IEEE Trans. Electron Devices

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“…HCBT is invented at the Faculty of Electrical Engineering and Computing, University of Zagreb, Croatia, [9,10] and its characteristics has been improved over 3 generations of transistors. At first, the technology concept has been demonstrated by using coarse contact lithography having transistors of with cutoff frequency (f T ) of 4.4 GHz and collector-emitter breakdown voltage (BV CEO ) of 15.8 V [11].…”

Section: Introductionmentioning

confidence: 99%

Horizontal current bipolar transistor (HCBT) - a low-cost, high-performance flexible BiCMOS technology for RF communication applications

Suligoj¹,

Koricic²,

Žilak³

et al. 2015

FACTA U EE

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In an overview of Horizontal Current Bipolar Transistor (HCBT) technology, the state-of-the-art integrated silicon bipolar transistors are described which exhibit f T and f max of 51 GHz and 61 GHz and f T BV CEO product of 173 GHzV that are among the highest-performance implanted-base, silicon bipolar transistors. HBCT is integrated with CMOS in a considerably lower-cost fabrication sequence as compared to standard vertical-current bipolar transistors with only 2 or 3 additional masks and fewer process steps. Due to its specific structure, the charge sharing effect can be employed to increase BV CEO without sacrificing f T and f max. Moreover, the electric field can be engineered just by manipulating the lithography masks achieving the high-voltage HCBTs with breakdowns up to 36 V integrated in the same process flow with high-speed devices, i.e. at zero additional costs. Double-balanced active mixer circuit is designed and fabricated in HCBT technology. The maximum IIP3 of 17.7 dBm at mixer current of 9.2 mA and conversion gain of-5 dB are achieved.

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A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs

Suligoj

Liu

Sin

et al. 2004

Solid-State Electronics

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Horizontal current bipolar transistor (HCBT): a new concept of silicon bipolar transistor technology

Cited by 10 publications

References 5 publications

A new lateral PNM Schottky collector bipolar transistor (SCBT) on SOI for nonsaturating VLSI logic design

A new lateral PNM Schottky collector bipolar transistor (SCBT) on SOI for nonsaturating VLSI logic design

Horizontal current bipolar transistor (HCBT) - a low-cost, high-performance flexible BiCMOS technology for RF communication applications

A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs

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