Hopping transport through defect-induced localized states in molybdenum disulphide

Qiu, Hao; Xu, Tao; Wang, Zilu; Ren, Wei; Nan, Haiyan; Ni, Zhenhua; Chen, Qian; Yuan, Shijun; Miao, Feng; Song, Fengqi; Long, Gen; Shi, Yi; Sun, Litao; Wang, Jinlan; Wang, Xinran

doi:10.1038/ncomms3642

Cited by 981 publications

(1,134 citation statements)

References 48 publications

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“…From Fig. 5(a) it is evident that at high defect concentration, the sulphur vacancies induce a midgap band with bandwidth ∼ 0.6 eV in the vicinity of the VBM, indicating that the defect states tend to be more into a n-type semiconductor in agreement with theory and experiment 3,[42][43][44] .…”

Section: Resultssupporting

confidence: 69%

Atomic defect states in monolayers of MoS2 and WS2

Salehi

Saffarzadeh

2016

Surface Science

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The influence of atomic vacancy defects at different concentrations on electronic properties of MoS 2 and WS 2 monolayers is studied by means of Slater-Koster tight-binding model with non-orthogonal sp 3 d 5 orbitals and including the spin-orbit coupling. The presence of vacancy defects induces localized states in the bandgap of pristine MoS 2 and WS 2 , which have potential to modify the electronic structure of the systems, depending on the type and concentration of the defects. It is shown that although the contribution of metal (Mo or W) d orbitals is dominant in the formation of midgap states, the sulphur p and d orbitals have also considerable contribution in the localized states, when metal defects are introduced. Our results suggest that Mo and W defects can turn the monolayers into p-type semiconductors, while the sulphur defects make the system a n-type semiconductor, in agreement with ab initio results and experimental observations.

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Section: Resultssupporting

confidence: 69%

Atomic defect states in monolayers of MoS2 and WS2

Salehi

Saffarzadeh

2016

Surface Science

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“…An inhomogeneous potential distribution in a semiconductor leads to the smearing of the band edge and the formation of a tail of band gap state 42 . For example, this inhomogeneity could be the result of a random distribution of trapped charges in sulphur vacancies in MoS 2 itself 43 or at MoS 2 -dielectric (SiO 2 or high-k dielectric) interfaces 14 . Structural defects 37 , for example, simple vacancies 43 , dislocations and grain boundaries, would also lead to localized gap states.…”

Section: Resultsmentioning

confidence: 99%

Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

et al. 2014

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Layered transition metal dichalcogenides display a wide range of attractive physical and chemical properties and are potentially important for various device applications. Here we report the electronic transport and device properties of monolayer molybdenum disulphide grown by chemical vapour deposition. We show that these devices have the potential to suppress short channel effects and have high critical breakdown electric field. However, our study reveals that the electronic properties of these devices are at present severely limited by the presence of a significant amount of band tail trapping states. Through capacitance and ac conductance measurements, we systematically quantify the density-of-states and response time of these states. Because of the large amount of trapped charges, the measured effective mobility also leads to a large underestimation of the true band mobility and the potential of the material. Continual engineering efforts on improving the sample quality are needed for its potential applications.

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“…Such HRTEM features have long been considered as the images of some atomic defects in other materials. 24,27,42 We propose several atomic defect models and simulate their HRTEM images by the software Web-EMAPS. 43 We find that the SLM sheet with a double Se vacancy and the SLM sheet with an EDTA-filled Se vacancy can interpret reasonably the two defect images, respectively.…”

Section: Discussionmentioning

confidence: 99%

Repairing atomic vacancies in single-layer MoSe2 field-effect transistor and its defect dynamics

et al. 2017

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Atomic defects are easily created in the single-layer electronic devices of current interest and cause even more severe influence than in the bulk devices since the electronic quantum paths are obviously suppressed in the two-dimensional transport. Here we find a drop of chemical solution can repair the defects in the single-layer MoSe 2 field-effect transistors. The devices' roomtemperature electronic mobility increases from 0.1 cm 2 /Vs to around 30 cm 2 /Vs and hole mobility over 10 cm 2 /Vs after the solution processing. The defect dynamics is interpreted by the combined study of the first-principles calculations, aberration-corrected transmission electron microscopy, and Raman spectroscopy. Rich single/double Selenium vacancies are identified by the highresolution microscopy, which cause some mid-gap impurity states and localize the device carriers. They are found to be repaired by the processing with the result of extended electronic states. Such a picture is confirmed by a 1.5 cm −1 red shift in the Raman spectra.

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Hopping transport through defect-induced localized states in molybdenum disulphide

Cited by 981 publications

References 48 publications

Atomic defect states in monolayers of MoS2 and WS2

Atomic defect states in monolayers of MoS2 and WS2

Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

Repairing atomic vacancies in single-layer MoSe2 field-effect transistor and its defect dynamics

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