Repairing atomic vacancies in single-layer MoSe2 field-effect transistor and its defect dynamics

Meng, Yuze; Ling, Chongyi; Xin, Run; Wang, Peng; Song, You; Bu, H.; Gao, Si; Wang, Xuefeng; Song, Fengqi; Wang, Jinlan; Wang, Xinran; Wang, Baigeng; Wang, Guanghou

doi:10.1038/s41535-017-0018-7

Cited by 40 publications

(35 citation statements)

References 48 publications

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“…Our AlO x -capped 2L devices achieve a record-high current density for atomically thin MoSe 2 of ∼65 μA/μm, with an I on / I off > 10 6 and R C of ∼60 kΩ·μm. 30 , 34 , 38 − 40 These results represent ∼20× improvement in R C and ∼30× enhanced current density compared to our (AlO x -capped) 1L devices. The AlO x doping effect aligns well with previously reported data for 1L and FL MoS 2 and ReS 2 encapsulation.…”

Section: Introductionmentioning

confidence: 48%

Improved Current Density and Contact Resistance in Bilayer MoSe₂ Field Effect Transistors by AlO_x Capping

Somvanshi

Ber

Bailey

et al. 2020

ACS Appl. Mater. Interfaces

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Atomically thin semiconductors are of interest for future electronics applications, and much attention has been given to monolayer (1L) sulfides, such as MoS 2 , grown by chemical vapor deposition (CVD). However, reports on the electrical properties of CVD-grown selenides, and MoSe 2 in particular, are scarce. Here, we compare the electrical properties of 1L and bilayer (2L) MoSe 2 grown by CVD and capped by sub-stoichiometric AlO x . The 2L channels exhibit ∼20× lower contact resistance ( R C ) and ∼30× larger current density compared with 1L channels. R C is further reduced by >5× with AlO x capping, which enables improved transistor current density. Overall, 2L AlO x -capped MoSe 2 transistors (with ∼500 nm channel length) achieve improved current density (∼65 μA/μm at V DS = 4 V), a good I on / I off ratio of >10 6 , and an R C of ∼60 kΩ·μm. The weaker performance of 1L devices is due to their sensitivity to processing and ambient. Our results suggest that 2L (or few layers) is preferable to 1L for improved electronic properties in applications that do not require a direct band gap, which is a key finding for future two-dimensional electronics.

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Section: Introductionmentioning

confidence: 48%

Improved Current Density and Contact Resistance in Bilayer MoSe₂ Field Effect Transistors by AlO_x Capping

Somvanshi

Ber

Bailey

et al. 2020

ACS Appl. Mater. Interfaces

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“…Although all the conductive filaments already broke during the postannealing, its resistive‐switching parameters and flexible performance could recover to those of the original memory after the postannealed memory underwent electric forming at room temperature (Figure S8, Supporting Information). In a word, this temperature stability is better than those of the widely used flash memory and most organic memories under study …”

Section: Nine Flexible Resistive Memories Studied Extensivelymentioning

confidence: 90%

Flexible, Semitransparent, and Inorganic Resistive Memory based on BaTi_0.95Co_0.05O₃ Film

et al. 2017

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Perovskite ceramics and single crystals are commonly hard and brittle due to their small maximum elastic strain. Here, large-scale BaTi Co O (BTCO) film with a SrRuO (SRO) buffered layer on a 10 µm thick mica substrate is flexible with a small bending radius of 1.4 mm and semitransparent for visible light at wavelengths of 500-800 nm. Mica/SRO/BTCO/Au cells show bipolar resistive switching and the high/low resistance ratio is up to 50. The resistive-switching properties show no obvious changes after the 2.2 mm radius memory being written/erased for 360 000 cycles nor after the memory being bent to 3 mm radius for 10 000 times. Most importantly, the memory works properly at 25-180 °C or after being annealed at 500 °C. The flexible and transparent oxide resistive memory has good prospects for application in smart wearable devices and flexible display screens.

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“…The unusual properties of two-dimensional (2D) materials are often generated not from a perfect crystalline lattice, but by the defects, grain boundaries, and other imperfections embedded within the structure. In 2D molybdenum diselenide (MoSe 2 ), a van der Waals semiconductor with monolayer direct bandgap of 1.5 eV 1 , these inhomogeneities can range in size from as small as a selenium vacancy [2][3][4] to microscale in the case of grain boundaries and locally oxidized domains [5][6][7] . While many researchers are pushing the limits of crystal perfection, the inhomogeneities and defects have proven beneficial in the cases of quantum emission from atomic vacancies [8][9][10] , electronic transport modification at grain boundaries 11,12 , and improved catalysis in substoichiometric materials 13 .…”

Section: Introductionmentioning

confidence: 99%

Uncovering topographically hidden features in 2D MoSe2 with correlated potential and optical nanoprobes

Moore

Nguyen

et al. 2020

npj 2D Mater Appl

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Developing characterization strategies to better understand nanoscale features in two-dimensional nanomaterials is of crucial importance, as the properties of these materials are many times driven by nanoscale and microscale chemical and structural modifications within the material. For the case of large area monolayer MoSe2 flakes, kelvin probe force microscopy coupled with tip-enhanced photoluminescence was utilized to evaluate such features including internal grain boundaries, edge effects, bilayer contributions, and effects of oxidation/aging, many of which are invisible to topographical mapping. A reduction in surface potential due to n-type behavior was observed at the edge of the flakes as well as near grain boundaries. Potential phase mapping, which corresponds to the local dielectric constant, depicted local biexciton and trion states in optically-active regions of interest such as grain boundaries. Finally, nanoscale surface potential and photoluminescence mapping was performed at several stages of oxidation, revealing that various oxidative states can be evaluated during the aging process. Importantly, all of the characterization performed in this study was non-destructive and rapid, crucial for quality evaluation of an exciting class of two-dimensional nanomaterials.

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Repairing atomic vacancies in single-layer MoSe2 field-effect transistor and its defect dynamics

Cited by 40 publications

References 48 publications

Improved Current Density and Contact Resistance in Bilayer MoSe₂ Field Effect Transistors by AlO_x Capping

Improved Current Density and Contact Resistance in Bilayer MoSe₂ Field Effect Transistors by AlO_x Capping

Flexible, Semitransparent, and Inorganic Resistive Memory based on BaTi_0.95Co_0.05O₃ Film

Uncovering topographically hidden features in 2D MoSe2 with correlated potential and optical nanoprobes

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Repairing atomic vacancies in single-layer MoSe2 field-effect transistor and its defect dynamics

Cited by 40 publications

References 48 publications

Improved Current Density and Contact Resistance in Bilayer MoSe2 Field Effect Transistors by AlOx Capping

Improved Current Density and Contact Resistance in Bilayer MoSe2 Field Effect Transistors by AlOx Capping

Flexible, Semitransparent, and Inorganic Resistive Memory based on BaTi0.95Co0.05O3 Film

Uncovering topographically hidden features in 2D MoSe2 with correlated potential and optical nanoprobes

Contact Info

Product

Resources

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Improved Current Density and Contact Resistance in Bilayer MoSe₂ Field Effect Transistors by AlO_x Capping

Improved Current Density and Contact Resistance in Bilayer MoSe₂ Field Effect Transistors by AlO_x Capping

Flexible, Semitransparent, and Inorganic Resistive Memory based on BaTi_0.95Co_0.05O₃ Film