Homogeneous solution grown epitaxial GaAs by tin doping

Harris, James S.; Snyder, W. L.

doi:10.1016/0038-1101(69)90088-4

Cited by 28 publications

(2 citation statements)

References 6 publications

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“…Tin is selected as n-type dopant in spite of its amphoteric property because of its extremely low vapour pressure, low segregation coefficient under the epitaxial growth elsewhere (Harris and Synder 1969;Vilms and Garrett 1972;Rosztoczy and Kinoshita 1974;Toyada et al 1976).…”

Section: Doping Study With Tinmentioning

confidence: 99%

Surface morphology and properties of GaAs epilayers controlled by temperature difference method of liquid phase epitaxy

Wei

Lü

et al. 1986

Bull. Mater. Sci.

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Abslraet. Epilayers of gallium arsenide were grown by using the steady-state temperature difference method of liquid phase epitaxy. The surface of grown layers was smooth and shiny. Carder concentrations of films varying from 1016 to 1017 cm-3 could be obtained with good reproducibility. The surface morphology growth rate, carrier concentration and Hall mobility of the epilayers were studied. Several distinct types of surface features were also investigated and explained. A segregation coefficient for the net carrier concentration versus tin concentration in the growth melt was calculated as 1-84 x 10-4 at 700°C for (100) GaAs substrate. Thickness control for epilayers down to submicron can be obtained reproducibly.

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Section: Doping Study With Tinmentioning

confidence: 99%

Surface morphology and properties of GaAs epilayers controlled by temperature difference method of liquid phase epitaxy

Wei

Lü

et al. 1986

Bull. Mater. Sci.

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“…The growth temperature is around 725~ for these layers and the substrates are <100> oriented. For comparison, recently published data by other authors are also presented (9,24,25). Based on our data, the distribution coefficient for GaAs grown from Ga solutions at 725~ is 7.9 X 1O -~ for <100> substrates, where the distribution coefficient is defined k----n / ( S n l ) .…”

Section: Distribution Coefficient Of Sn For <100> and <111b> Substratesmentioning

confidence: 99%

Growth and Evaluation of Epitaxial GaAs for Microwave Devices

Rosztoczy

Kinoshita

1974

J. Electrochem. Soc.

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The growth of gallium arsenide films from a thin solution layer between substrates

Bolchovitianov

Bolchovitianova

Melnikov

1973

Cryst Res and Technol

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The method of GaAs film growth from a solution between two substrates was considered. The calculated thickness as a function of growth temperature and distance between substrates was in a good agreement with experimental results. The investigation of the film roughness as a function of cooling rate, distance between substrates and their orientations was fulfilled. Electrical properties of the films as a function of substrate orientations in the interval (100)–(111)–(011) were demonstrated. The possibility of application of this method for the investigation of film doping as a function of temperature and growth rate was shown.

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Homogeneous solution grown epitaxial GaAs by tin doping

Cited by 28 publications

References 6 publications

Surface morphology and properties of GaAs epilayers controlled by temperature difference method of liquid phase epitaxy

Surface morphology and properties of GaAs epilayers controlled by temperature difference method of liquid phase epitaxy

Growth and Evaluation of Epitaxial GaAs for Microwave Devices

The growth of gallium arsenide films from a thin solution layer between substrates

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