Homogeneous hydrogen-terminated Si(111) surface formed using aqueous HF solution and water

Watanabe, Satoru; Nakayama, Noriaki; Ito, Takashi

doi:10.1063/1.105287

Cited by 177 publications

(64 citation statements)

References 8 publications

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“…As a result, the native oxide is removed from the surfaces and all surface atoms are occupied by covalently-bonded hydrogen. The water rinse following the HF treatment is important, because immersion in the diluted acid solution will leave some hydrogen-associated Si fluorides behind and will not terminate all the surface bonds with just hydrogen [29][30][31]. The cleaned specimens were tested within one hour, even though there is ample evidence in the literature that H-terminated Si surfaces are highly stable against oxidation and hydration in air for several hours or even days [32][33][34][35][36].…”

Section: Pretreatment and Cleaningmentioning

confidence: 99%

Surface chemistry-controlled tribological behavior of silicon and diamond

Gardos

1996

Tribol Lett

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SEM tribometric experiments were performed with Si(100) vs. Si(100) interfaces in mode-rate vacuum to 850~ The results are compared with similar tests previously completed with fine-cauliflowered PCD (PCDfcf) mated against itself, and polished C(100)-textured polycrystalline diamond (PCDc(i00)) sliding against Si(100). All data agree with a hypothesis connecting the thermal desorption of adsorbates and wear with the generation of dangling bonds on the sliding surfaces. Linking of the counterfaces by the free radicals appears to be the main cause of high adhesion and friction. The high friction can be drastically reduced by dissociative chemisorption of certain passivating gaseous species condensing at sufficiently low surface temperatures. Strong circumstantial evidence continues to mount for the incremental reduction in high temperature friction being caused by surface reconstruction. Deconstruction of the sliding surfaces and the reemergence of high friction eventually occurs on discontinued heating, until the adsorbates chemisorb on the cooled surfaces. There, the friction drops to a level determined by the characteristic shear strength of the interfaces and the wear-induced increase in the real area of contact. The maximum friction measured at high temperatures in vacuum, indicative of the most intensive interaction of dangling bonds at the interface, scaled only approximately with the 1.8 times strength of the C-C versus the Si-Si bonds. The 1.6 experimental ratio is lower than the theoretical, reflecting the broad distribution of dangling bond energies (densities of surface trap states) for PCD and even for polished Si(100). The wear rate of Si(100) sliding against itself is about four-orders-of-magnitude higher (~ 2 x 10 -12 m3/(Nm))thanthatofunpolishedPCDfefvs.itself(4 x 10-16m3/(Nm))or rough and unpolished PCDc(100) wearingits polishedversion (8.5 x 10 -16 m3/(Nm)).

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Section: Pretreatment and Cleaningmentioning

confidence: 99%

Surface chemistry-controlled tribological behavior of silicon and diamond

Gardos

1996

Tribol Lett

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“…Consequently, the dipole contribution of the oxide layer to the junction capacitance is negligible, so that the Ñuctuations in the Ñat-band barrier heights, and hence the rectifying properties of the SBDs, can be explained by considering the interfacial states. Because aqueous HF solutions remove the native oxide and leave behind a hydrogenterminated Si surface, 19,20,24,30 it is judged that the above assumption is valid for the SBDs considered here. In order to explain the variation of the diode properties, we have classiÐed the cleaning procedures detailed in Table 1 into two groups : group A for wm1, wm2 and wm4 and group B for the remaining clean-(R rms [ 5 Ó) ; ing methods (R rms \ 5 Ó).…”

Section: Discussionmentioning

confidence: 95%

Atomic force microscopy study of Si(111) surface morphology and electrical characteristics of Pd/n-Si schottky diodes: effect of cleaning procedures

Deenapanray

Auret

Myburg

et al. 1998

Surf. Interface Anal.

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“…We perform a rinsing and a drying process right after the HF dipping; these are extremely critical steps because the clean surface can be recontaminated easily if not processed properly [7]. Rinsing in deionized (DI) water removes species that are weakly bound to the surface and can even etch the surface [8]. In this study, we evaluate the cleaning efficiency of rinsing and drying techniques.…”

Section: Introductionmentioning

confidence: 99%

Effect of rinsing and drying on silicon surface cleaning for epitaxial growth

Kim

Hwang

et al. 2002

Met. Mater. Int.

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We investigated the effect of the rinsing and drying technique on the oxygen and carbon concentration on a silicon surface. Rinsing in deionized water increased the interfacial oxygen concentration and helped generate defects. Blow-drying was more efficient than spin-drying in reducing interfacial oxygen concentration. Exposure to the atmosphere was detrimental to obtaining high crystallinity in the epitaxial layer. We evaluated the effectiveness of the cleaning process by observing the grown epilayer and the epilayer/substrate interface.

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Homogeneous hydrogen-terminated Si(111) surface formed using aqueous HF solution and water

Abstract: Reaction of the fluorine atom and molecule with the hydrogen-terminated Si(111) surface J.The bonding of arsenic to the hydrogenterminated Si(111) surface J.

Cited by 177 publications

References 8 publications

Surface chemistry-controlled tribological behavior of silicon and diamond

Surface chemistry-controlled tribological behavior of silicon and diamond

Atomic force microscopy study of Si(111) surface morphology and electrical characteristics of Pd/n-Si schottky diodes: effect of cleaning procedures

Effect of rinsing and drying on silicon surface cleaning for epitaxial growth

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