Submicron-size SiC ceramics were sintered to densities >97% of the theoretical density by adding 5 wt % in situ-synthesized nano-size SiC and 2 wt % AlNRE 2 O 3 (RE = Y, Er). The SiC ceramics showed very low electrical resistivity in an order of 10 ¹4 ³·m. This low electrical resistivity was attributed to the smaller amount (2 wt %) of sintering additives addition and their microstructural characteristics, i.e., growth of nitrogn-doped SiC grains and the confinment of non-conducting Y-and Er-containing phases in the junction areas.©2011 The Ceramic Society of Japan. All rights reserved.Key-words : SiC, Sintering, Electrical resistivity [Received June 15, 2011; Accepted September 20, 2011] Silicon carbide (SiC) ceramics with a small amount of additives or without additives have attracted considerable attention for use in semiconductor processing, nuclear fusion reactors, and high temperature thermomechanical applications because of their excellent chemical and thermal stability and good mechanical properties.1)8) In the early 1980 s, Omori and Takei 9) reported an innovative approach to fully densify SiC at temperatures as low as 1850°C via liquid-phase sintering by adding rare earth oxides to the starting powder. Since this innovative work, interest in liquidphase sintered (LPS)-SiC has grown continuously, becausae LPSSiC ceramics show better mechanical properties than solid-state sintered SiC ceramics. sintered SiC ceramics with 3 wt % RE 2 O 3 AlN additives (RE = Sc, Lu, Y). SiC ceramics sintered with a smaller amount of additives would be more beneficial for applications in semiconductor processing and nuclear fusion reactors because of their better chemical and thermal stability.In this study, the sinterability of SiC ceramics with 2 wt % additives (RE 2 O 3 AlN, RE = Y, Er) was investigated with or without 5 wt % in-situ-synthesized nano-size SiC addition. The electrical resistivity of the resulting SiC ceramics was also investigated.For SiC with 2 wt % additives, submicron ¢-SiC (Ultrafine, Betarundum, Ibiden Co. Ltd.), polysiloxane (1036 kg/m 3 , GE Toshiba Silicones Co., Ltd., Tokyo, Japan), phenol resin (1090 kg/m 3 , Kangnam Chemical Co. Ltd., Incheon, Korea), Y 2 O 3 (99.9%, Kojundo Chemical Lab Co. Ltd., Sakado, Japan), Er 2 O 3 (99.9%, Kojundo Chemical Lab Co. Ltd., Sakado, Japan) and AlN (grade B, H. C. Starck, Berlin, Germany) were mixed at the weight ratio shown in Table 1 by ball milling using SiC balls and a polypropylene jar for 24 h in ethanol. The AlN:RE 2 O 3 molar ratio was 3:2. The mixtures were dried, sieved (60 mesh), pressed uniaxially and heat-treated at 200°C for 2 h in air to cross-link the polysiloxane in the mixture. The compact was heat-treated at 1450°C for 1 h and hot-pressed at 2050°C for 6 h under 40 MPa in an atmospheric pressure of nitrogen.The relative densities of the hot-pressed specimens were determined using the Archimedes method. The theoretical densities of each specimen were calculated according to the rule