Homogeneous broadening in quantum dots due to Auger scattering with wetting layer carriers

Simulation of characteristics of broadband quantum dot lasers

“…As carrier relaxation occurs from higher energy states to lower energy states within each QD ensemble, higher density of carriers are expected in ES. Hence, a faster dephasing time is expected in ES than in GS due to the dependence of homogeneous broadening on carrier-carrier interaction (Nilsson et al 2005). A linear dependence of homogeneous linewidth on carrier injection is shown in Fig.…”

Thresholds of quasi-supercontinuum interband quantum dot lasers

“…3b. This occurs when the ground states of QD are fully occupied and injection carriers start to populate the excited states (Nilsson et al 2005). The homogeneous broadening of excited states will increase and contributes to a narrower lasing linewidth Fig.…”

Anisotropic and inhomogeneous Coulomb screening in the Thomas–Fermi approximation: Application to quantum dot–wetting layer system and Auger relaxation

“…Further work is needed to analyze this effect and to obtain new analytical formula for the scattering rates like in Ref. [17]. The Thomas-Fermi approximation has been used in this paper although it normally corresponds to the low temperature case [25,33] rather than to the high temperature case [18,30].…”

“…In the presence of the WL, the QD wavefunctions can extend into the WL area. In order to avoid a complete electronic calculation for the whole QD+WL system [30], it is possible to apply an orthogonalization procedure [15,17]. Screening is expected to be less influenced by these corrections, particularly at low QD density [15].…”