Homogeneity Improvements in the Dielectric Characteristics of HfSiON Films by Nitridation

Abstract

We improve the method proposed by Yao et al (2003) to resolve the X-ray dust scattering halos of point sources. Using this method we re-analyze the Cygnus X-1 data observed with Chandra (ObsID 1511) and derive the halo radial profile in different energy bands and the fractional halo intensity (FHI) askeV . We also apply the method to the Cygnus X-3 data (Chandra ObsID 425) and derive the halo radial profile from the first order data with the Chandra ACIS+HETG. It is found that the halo radial profile could be fit by the halo model MRN (Mathis, Rumpl & Nordsieck, 1977) and WD01 (Weingartner & Draine, 2001); the dust clouds should be located at between 1/2 to 1 of the distance to Cygnus X-1 and between 1/6 to 3/4 (from MRN model) or 1/6 to 2/3 (from WD01 model) of the distance to Cygnus X-3, respectively.

Tight Distribution of Dielectric Characteristics of HfSiON in Metal Gate Devices

“…8, the activation energy for breakdown was evaluated as 0.5±0.2 eV, which is independent on the nitrogen concentration. The value is close to that for poly-Si gate stack (8) , 11 (4) 3-11 (2007) the observed breakdown is intrinsic and dielectric material dependent phenomenon. The obtained activation barrier is in good agreement with the calculated energy barriers for oxygen diffusion in HfO 2 (0.3-0.6eV) (25).…”

“…In other words, the HfSiON dielectrics with poly-Si gate contain a lot of defects which assist current leakage, and the intrinsic characteristics of the dielectric film are not visible. It is quite natural to attribute the defects to oxygen vacancies which has been proposed as the paths for electron transport (12,23,24), and nitrogen atoms must have played a role to deactivate them by removing electrons (8). The severe generation of oxygen vacancy in the HfSiON film with poly-Si gate is due to its high reactivity with oxygen, which has been demonstrated while explaining the Fermi level pinning (11).…”

Characterization of Threshold Voltage Shift by Negative Bias Temperature Stress in HfSiOx Films

“…The slopes have temperature dependence and the activation energy was evaluated to 0.03 eV. It is different from the activation energy of breakdown, 0.7 eV(11).…”

Nanoscale characterization of advanced high-?? gate dielectric stacks via scanning tunneling microscopy

“…High-κ last integration scheme allows the high-κ gate oxide to be integrated into MOSFET without undergoing phase change induced by the high-thermal-budget frontend processes, thereby improving the film reliability [143][144]. However, as- ambience [78], direct oxidation of Hf in ozone [153] or post-deposition nitridation [151] were reported. However, the improvement is usually accompanied by an undesirable increase of the EOT due to the high temperature involved.…”

“…deposited high-κ film is usually loosely packed and contains an inherently high density of as-grown defects, such as oxygen vacancies (V O 's), which give rise to the gap states leading to transient charge trapping (hence threshold voltage instability) and gate leakage current[149][150][151]. Attempts to reduce the V O density via annealing in O 2…”