Homoepitaxial growth of HVPE-GaN doped with Si

Iwińska, Małgorzata; Sochacki, Tomasz; Amilusik, Mikolaj; Kempisty, Paweł; Łucznik, B.; Fijałkowski, Michał; Litwin‐Staszewska, E.; Smalc-Koziorοwska, Julita; Khapuridze, A.; Staszczak, G.; Grzegory, I.; Boćkowski, Michał

doi:10.1016/j.jcrysgro.2016.08.043

Cited by 33 publications

(23 citation statements)

References 17 publications

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“…The list of the investigated samples and their room temperature parameters are presented in Table 1 . The samples under study were prepared from n-type GaN grown using four basic techniques: metal-organic vapor phase epitaxy (MOVPE) [ 17 ], plasma-assisted molecular beam epitaxy (PAMBE) [ 18 ], halide vapor phase epitaxy (HVPE) [ 19 ], and ammonothermal growth (Am) [ 20 ]. Additionally, GaN crystallized by the High Nitrogen Pressure Solution method in a multi-feed–seed configuration (MFS) without intentional doping was also examined [ 21 ].…”

Section: Experimental Methods and Room Temperature Characterizationmentioning

confidence: 99%

Negative Magnetoresistivity in Highly Doped n-Type GaN

et al. 2022

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This paper presents low-temperature measurements of magnetoresistivity in heavily doped n-type GaN grown by basic GaN growth technologies: molecular beam epitaxy, metal-organic vapor phase epitaxy, halide vapor phase epitaxy and ammonothermal. Additionally, GaN crystallized by High Nitrogen Pressure Solution method was also examined. It was found that all the samples under study exhibited negative magnetoresistivity at a low temperature (10 K < T < 50 K) and for some samples this effect was observed up to 100 K. This negative magnetoresistivity effect is analyzed in the frame of the weak localization phenomena in the case of three-dimensional electron gas in a highly doped semiconductor. This analysis allows for determining the phasing coherence time τφ for heavily doped n-type GaN. The obtained τφ value is proportional to T−1.34, indicating that the electron–electron interaction is the main dephasing mechanism for the free carriers.

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Section: Experimental Methods and Room Temperature Characterizationmentioning

confidence: 99%

Negative Magnetoresistivity in Highly Doped n-Type GaN

et al. 2022

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“…The lowest detection limit of carbon in GaN of 10 15 at/cm 3 was obtained by [94], but the measurement conditions were not described. The SIMS measurement of gallium nitride grown by hydride vapor phase epitaxy (HVPE) allow receiving the carbon detection limit at the level of 5 × 10 15 at/cm 3 [108][109][110]. Eventually the highly resistive GaN bulk crystals [83] were obtained.…”

Section: Sims Measurement Of Carbonmentioning

confidence: 99%

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

2019

Acta Phys. Pol. A

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The paper addresses the role of ambient elements (H, C, N and O) in the wide-bandgap semiconductor compounds. Their prevalence in the atmosphere imposes limitations not only on the purity of the materials under processing but, also, on the detection and measurement of the content of these species. Specifically, a review of electrical and optical properties, based on the available literature, is presented for: hydrogen in GaN, ZnO and SiC, carbon in GaN and ZnO, nitrogen in ZnO and SiC and oxygen in GaN and SiC. Further, the refinements of the SIMS (Secondary Ions Mass Spectrometry) analytical technique, aiming to improve the sensitivity and detection limit of atmospheric elements, are described in detail. These include the choice of primary beam type and current, type of secondary single or cluster ions, geometry and vacuum conditions. Finally, the evaluated so-called RSF parameters (Relative Sensitivity Factors) are given for each atom-semiconductor pair, converting raw data to the absolute value of concentration.

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“…For GaN-based devices, Si and Mg are commonly used as n-type and p-type dopants, respectively. − These dopants are mainly ascribed to the shallow dopant property. , However, the carrier concentration is much lower than the number of dopants. ,− According to previous studies, the carrier concentration is about 1 order of magnitude less than the Si concentration …”

Section: Introductionmentioning

confidence: 99%

“…29,32−34 According to previous studies, the carrier concentration is about 1 order of magnitude less than the Si concentration. 29 In spite of many studies on dopants in GaN, there are few methods directly to investigate chemical states and atomic structures of dopants in GaN. Kumar et al investigated chemical states and atomic structures in dopants for Mg-doped GaN using scanning transmission electron microscopy and atom probe tomography.…”

Section: Introductionmentioning

confidence: 99%

Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Si-Doped GaN

Tang

Yamashita

2021

ACS Appl. Electron. Mater.

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The atomic structures and the electronic states of active and inactive dopant sites in semiconductor are elucidated successfully by using X-ray absorption near-edge structure (XANES), Auger electron spectroscopy (AES), and photoelectron spectroscopy (PES). To demonstrate the versatility of this method, we investigated Si-doped GaN as a prototype and clarified the atomic structures and chemical states at the active and inactive dopant sites in GaN. From AES and PES, it was found that Sidoped GaN formed two dopant states, which were attributed to Si 3 N 4 and SiN x . From the Si K-edge XANES, the Si 3 N 4 state did not exhibit electronic states in the GaN bandgap, indicating inactive dopant sites in GaN, whereas the SiN x state exhibited bandgap states. Thus, the SiN x state should act as an active dopant site in Si-doped GaN. The simulated XANES spectra well reproduced the electronic state in the GaN bandgap when the Ga atom is replaced by the Si atom, suggesting that the active dopant site may be the Si-substituted Ga sites.

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Homoepitaxial growth of HVPE-GaN doped with Si

Cited by 33 publications

References 17 publications

Negative Magnetoresistivity in Highly Doped n-Type GaN

Negative Magnetoresistivity in Highly Doped n-Type GaN

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Si-Doped GaN

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