Homoepitaxial growth of 4H-SiC on on-axis C-face substrates by chemical vapor depositon

Kojima, Kazutoshi; Okumura, Hajime; Kuroda, Shunsuke; Arai, Kazuo

doi:10.1016/j.jcrysgro.2004.04.122

Cited by 66 publications

(84 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Typical net background impurity level was in the high 10 13 cm −3 range with n-type conductivity. Intentional doping was between 5×10 14 cm −3 and 5×10 18 cm −3 for n-type layers and was between 1×10 15 cm −3 and 5×10 19 cm −3 for p-type layers. In-situ surface preparation [25], prior to the growth, was performed under Si-rich conditions for 20 min at 1620 °C.…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

On-axis homoepitaxial growth on Si-face 4H–SiC substrates

Hassan

Bergman

Henry

et al. 2008

Journal of Crystal Growth

View full text Add to dashboard Cite

Homoepitaxial growth has been performed on Si-face nominally on-axis 4H-SiC substrates using horizontal Hot-wall chemical vapor deposition system. Special attention was paid to the surface preparation before starting the growth. In-situ surface preparation, starting growth parameters and growth temperature are found to play a vital role to maintain the polytype stability in the epilayer. High quality epilayers with 100% 4H-SiC were obtained on full 2″substrates. Different optical and structural techniques were used to characterize the material and to understand the growth mechanisms. It was found that the replication of the basal plane dislocation from the substrate into the epilayer can be completely eliminated. The on-axis grown epitaxial layers were of high quality and did not show surface morphological defects, typically seen in off-axis grown layers, but had a high surface roughness.

show abstract

Section: Methodsmentioning

confidence: 99%

“…Among those only one with successful homoepitaxy; however, the work was conducted on C-face substrates [19]. C-face seed crystals are generally used for the bulk growth of 4H-SiC while bulk growth using Si-face seed crystals often results in switching of polytype to 6H-SiC [20].…”

Section: Introductionmentioning

confidence: 99%

On-axis homoepitaxial growth on Si-face 4H–SiC substrates

Hassan

Bergman

Henry

et al. 2008

Journal of Crystal Growth

View full text Add to dashboard Cite

show abstract

“…3 However, it has been reported recently that high-quality epitaxial films have been successfully grown on the 4H-SiC C face and achieved ch of over 100 cm 2 / V s by pyrogenic oxidation technique, i.e., thermal oxidation in a mixture of oxygen and hydrogen ambient, followed by hydrogen annealing. [4][5][6][7][8] These reports have shown that the electrical characteristics of MOSFETs obtained by dry oxidation of the 4H-SiC C face are significantly poorer than those obtained by wet oxidation of the 4H-SiC C face. 7 In contrast, in the case of the 4H-SiC Si face, the difference in the electrical characteristics between wet and dry oxidations is not very significant.…”

Section: Introductionmentioning

confidence: 99%

Characterization of oxide films on 4H-SiC epitaxial (0001¯) faces by high-energy-resolution photoemission spectroscopy: Comparison between wet and dry oxidation

Hijikata¹,

Yaguchi²,

Yoshida³

et al. 2006

Journal of Applied Physics

View full text Add to dashboard Cite

Wet and dry oxide films-4H-SiC epitaxial (0001¯) C-face interfaces have been characterized by capacitance-voltage (C-V) measurements and soft x-ray excited photoemission spectroscopy (SX-PES) and hard x-ray excited photoemission spectroscopy (HX-PES) using synchrotron radiation. The interface state density for wet oxidation is much smaller than that for dry oxidation at any energy level. In the PES measurements, intermediate oxidation states such as Si1+ and Si3+ were observed. In addition, the areal densities of these states were found to be in a good correspondence with those of the interface states. The reasons for the good electrical characteristics of metal-oxide-semiconductor devices fabricated by wet oxidation are discussed in terms of the depth profiles of oxide films derived from the SX-PES and HX-PES results.

show abstract

“…With regard to the off angle, we grew the homoepitaxial layer on 4H-SiC on-axis substrates by using the C-face under a condition of a low C/ Si ratio of 0.6 [7]. In this case, the step flow is weaker than in an 81 off-axis substrate.…”

Section: Introductionmentioning

confidence: 99%