Homoepitaxial films grown on Si (100) at 150 °C by remote plasma-enhanced chemical vapor deposition

Breaux, L.; Anthony, B.; Hsu, Tsan-sheng; Banerjee, Sanjay K.; Tasch, A.F.

doi:10.1063/1.102161

Cited by 74 publications

(17 citation statements)

References 9 publications

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“…According to Ghidini's results, the process conditions in Fig:. 3(a) should be in between the intermediate region and the clean, Si region, which means reactions [5] and [6] should dominate. The low surface coverage of SiO2 also means that reaction [7] is not significant in terms of contribution to void formation.…”

Section: Resultsmentioning

confidence: 98%

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Study of Rapid Thermal Precleaning for Si Epitaxial Growth

Hsieh

Jung

Kwong

et al. 1992

J. Electrochem. Soc.

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In this paper, in situ H., precleaning of bare and oxide patterned (1O0) Si substrates was studied at 800-1100~ and 5 Torr with base pressures of 1.5 x 1() -~ to 7 x 10 -~ Torr. The preclean can cause considerable surface damage due to enhanced etching, which strongly depends on process parameters such as base pressure and temperature. High preclean temperatures with low base pressures cause severe surface roughness, impacting subsequent film growth. Optimized preclean conditions produce damage-free surfaces. Preclean damage.' of oxide patterned substrates includes oxide consumption and surface pit formation. Surface morphology was characterized by Nomarski optical microscopy, electron microscopy, and optical reflectance. Our' results and explanations suggest that under proper conditions, enhanced etching can be used to significantly lower preclean temperatures and times without observable etching damage. We demonstrate that an 800~C H~ preclean for 15 and 60 s is sufficient for high quality Si epitaxial and selective epitaxial growth, respectively.

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Section: Resultsmentioning

confidence: 98%

“…:O(g) --> SiO_,(s) + 2Hz(g) [4] At low O._, and [:t20 partial pressures and high substrate temperatures, the surface is free of SiO._, due to the production of volatile SiO via the (net) reactions of 2St(s) + O.ig) ---> 2SiO2(g) [5] St(s) + H::O(g) ---> SiO(g) + tI2(g) [61…”

Section: Si/si02 Chemistrymentioning

confidence: 98%

Study of Rapid Thermal Precleaning for Si Epitaxial Growth

Hsieh

Jung

Kwong

et al. 1992

J. Electrochem. Soc.

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“…As a specific example, we will consider the photolytic growth of SiixGex from Si2H6 and Ge2H6. The photolytic growth rate for the case of two absorbing gas components should have the form L Si a,Si + Ge a,Ge' (4) where C51 and CGe are given by 2V a CSi=Adh. (5) CGe 2V (6) Adhv PGe in analogy to the expression for the photolytic growth rate for a single absorbing gas component.…”

Section: Silicon-germanium Growthmentioning

confidence: 99%

<title>Laser-enhanced CVD for low-temperature Si epitaxy</title>

Banerjee

1993

Rapid Thermal and Laser Processing

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Low thermal-budget semiconductor pmcessing will have a major impact on future Ultra Large Scale Integration (UISI) and Si-based hetemstructure devices because it reduces thermal-stress-generated-defects and maintains compact doping profiles and heterolayer integrity. This paper discusses low temperature Si homoepitaxy at temperatures as low as 250 °C by photo-enhanced chemical vapor deposition (PCVD) using the photolytic decomposition of Si2H by the 193 nm emission of an ArF excimer laser in an ultra high vacuum system. Very low defect density films, in terms of stacking faults and dislocation loops (less than 105 cm2), and excellent crystallinity have been grown. The growth rates increase linearly with laser power.

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“…In addition, ion cluster beam deposition (15) and ion beam epitaxy (16) have also been investigated. Low-temperature CVD techniques such as ultrahigh vacuum CVD (UHV/ CVD) (17), plasma-enhanced CVD (PECVD) (18)(19)(20)(21)(22), remote plasma CVD (RPCVD) (23)(24), and photo-induced epitaxy (25) have also been studied. Recently, Sedgwick et al have lowered epitaxial growth temperatures down to 600~ at atmospheric pressure by using purified hydrogen (26).…”

mentioning

confidence: 99%

Silicon Homoepitaxy by Rapid Thermal Processing Chemical Vapor Deposition (RTPCVD)—A Review

Hsieh

Jung

Kwong

et al. 1991

J. Electrochem. Soc.

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Rapid thermal processing chemical vapor deposition (RTPCVD) has received considerable attention because of its ability to reduce-many of the processing problems associated with thermal exposure in conventional chemical vapor deposition, while still retaining the ability to grow high-quality epitaxial layers. In this paper, silicon homoepitaxy growth by RTPCVD is studied extensively and comprehensively. The principles of the RTPCVD system are described, followed by results of experiments on in situ cleaning, undoped Si epitaxy on Si and silicon-on-insulator substrates, in situ doped Si epitaxy, and selective epitaxial growth of Si using oxide masks and oxide on polycrystalline Si on oxide masks. Selective growth was achieved without the use of HC1. Our results show that RTPCVD is capable of growing high-quality, epitaxial Si layers with sharp dopant transition profiles. A brief discussion of fabricated devices is included.As individual semiconductor device dimensions continue .to shrink, stringent control of the vertical profiles of layers and dopants on an atomic scale without sacrificing control of microscopic lateral dimensions over large areas is required. Therefore, the ability to process layers of heterogeneous materials (metals, insulators, and semiconductors) without destroying previously fabricated structures is of paramount importance for advances in planar integration and may eventually make possible the development of true three-dimensional integration.

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Homoepitaxial films grown on Si (100) at 150 °C by remote plasma-enhanced chemical vapor deposition

Cited by 74 publications

References 9 publications

Study of Rapid Thermal Precleaning for Si Epitaxial Growth

Study of Rapid Thermal Precleaning for Si Epitaxial Growth

<title>Laser-enhanced CVD for low-temperature Si epitaxy</title>

Silicon Homoepitaxy by Rapid Thermal Processing Chemical Vapor Deposition (RTPCVD)—A Review

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