Hollow Fibers of Lanthanum Cerium Oxide Prepared by Electrospinning

Comparison of metal-organic decomposed (MOD) cerium oxide (CeO2) gate deposited on GaN and SiC substrates

“…The calculation of grain size using the W-H approach was validated through the shift of CeO 2 peaks to the low degree side for 1000 1C annealed CeO 2 /GaN system when compared with CeO 2 /SiC system. This indicated an increase in grain size, which is similar with the finding reported by Li et al [24]. When the annealing temperature is increased to 1150 1C for CeO 2 /SiC system, the size is increased to 36.4 nm.…”

Effects of post-deposition annealing temperature and time on physical properties of metal-organic decomposed lanthanum cerium oxide thin film

“…It has been reported that the shift to the lower degree side implied that the lattice parameter increased with the increase of grain size [37]. Williamson-Hall (W-H) plot was used to determine the grain size (D) of the La x Ce y O z films from the XRD line broadening, in which the details were discussed in Ref.…”

“…Formation of La 2 Ce 2 O 7 has been reported in previous literatures but it is mainly used for thermal barrier coating due to the fascinating properties, such as low thermal conductivity, high melting point, and thermal expansion match with the underlying substrate that it offers [35][36][37][38]. Since there is no pertinent investigation on the employment of La x Ce y O z as a gate oxide material, it is of interest to investigate the performance of La x Ce y O z for future integration in MOS-based devices.…”

Preparation of Yb2O3 submicron- and nano-materials via electrospinning

“…This includes several lanthanide sesquioxides [5,[20][21][22], but, to our best knowledge, no information on Yb 2 O 3 has been reported until now. Therefore, here we present studies on the easy synthesis of Yb 2 O 3 submicron-and nano-materials, via the oxidation of electrospun ytterbium acetylacetonate-based precursors.…”