Hole Mobility and Thermal Velocity Enhancement for Uniaxial Stress in Si up to 4 GPa

Fan, Xiaofeng; Register, Leonard F.; Winstead, B.; Foisy, M.; Chen, Wanqiang; Zheng, Xin; Ghosh, Bahniman; Banerjee, Sanjay K.

doi:10.1109/ted.2006.888667

Cited by 20 publications

(16 citation statements)

References 20 publications

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“…Indeed, strain engineering is nowadays used quite extensively in the microelectronics industry. [11][12][13] In this respect, SiNWs have an unusually large piezoresistive coefficient, as reported by He and Yang, 10 thus increasing the motivation for SiNW strain engineering applications. Understanding the mechanical properties of SiNWs and being able to quantify and control them, are of crucial importance for successful realization of such applications.…”

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confidence: 99%

Young’s Modulus, Residual Stress, and Crystal Orientation of Doubly Clamped Silicon Nanowire Beams

et al. 2015

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Initial or residual stress plays an important role in nanoelectronics. Valley degeneracy in silicon nanowires (SiNWs) is partially lifted due to built-in stresses, and consequently, electron-phonon scattering rate is reduced and device mobility and performance are improved. In this study we use a nonlinear model describing the force-deflection relationship to extract the Young's modulus, the residual stress, and the crystallographic growth orientation of SiNW beams. Measurements were performed on suspended doubly clamped SiNWs subjected to atomic force microscopy (AFM) three-point bending constraints. The nanowires comprised different growth directions and two SiO2 sheath thicknesses, and underwent different rapid thermal annealing processes. Analysis showed that rapid thermal annealing introduces compressive strains into the SiNWs and may result in buckling of the SiNWs. Furthermore, the core-shell model together with the residual stress analysis accurately describe the Young's modulus of oxide covered SiNWs and the crystal orientation of the measured nanowires.

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confidence: 99%

Young’s Modulus, Residual Stress, and Crystal Orientation of Doubly Clamped Silicon Nanowire Beams

et al. 2015

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“…The inverse of m * of the 1 st subband vs. uniaxial compressive stress calculated by Eq. [1] is shown in Fig.3. Strained Ge/relaxed Si 0.6 Ge 0.4 with the smallest m * results into the highest mobility among Ge and Si shown in Fig.1 1 Ge has a stronger mobility enhancement than Si.…”

Section: Modelsmentioning

confidence: 99%

“…The strong mobility enhancement under uniaxial compressive stress along [110] direction (s[110]) on Si (001) substrate has been reported due to the subband energy splitting and conductive effective mass (m * ) reduction. 1 For Ge p-MOSFETs on (001) substrate, energy splitting between the 1 st and 2 nd subband at high field (E eff >0.5MV/cm) is larger than Ge optical phonon (37meV) 2 , and the extra splitting by electric field cannot help the mobility enhancement. However, in recent experimental studies, the mobility enhancement can be further boosted by exerting the biaxial compressive strain and uniaxial compressive stress on Ge due to extra mass reduction.…”

Section: Introductionmentioning

confidence: 99%

Hole Mobility Boost of Ge p-MOSFETs by Composite Uniaxial Stress and Biaxial Strain

2013

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The hole mobility of relaxed Ge channel, and strained Ge channel on relaxed Si0.6Ge0.4 substrate were simulated and compared to our experimental work (Al2O3/GeO2 gate stack) and previous data. The rougher interface at GeO2/Ge than SiO2/Si makes a faster roll-off of Ge hole mobility at high field. For SiO2/Ge interface, the Ge hole mobility has a similar roll-off as Si universal mobility. Ge has higher mobility enhancement than Si under uniaxial compressive stress along [110] direction. For composite uniaxial compressive stress (-3GPa) and biaxial compressive strain (2.4%) on Ge p-MOSFETs, Ge mobility enhancement can reach as high as 23 times of Si mobility. The mass reduction of Ge is mainly responsible for the mobility enhancement.

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“…Therefore, the full power of three-dimensional full-band Monte Carlo methods which include accurate band-structure and scattering processes to obtain transport characteristics in inversion layers and SOI structures can be applied [8,121]. Recently, mobility of stressed Si/SiGe inversion layers was investigated [122][123][124]. Interestingly, due to a concentration decrease at the interface, the surface roughness scattering is underestimated, which requires special corrections [125].…”

Section: Quantum Correction Potential Density Gradient and Quantum mentioning

confidence: 99%

Current transport models for nanoscale semiconductor devices

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Ungersboeck

Kosina

et al. 2008

Materials Science and Engineering: R: Reports

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Hole Mobility and Thermal Velocity Enhancement for Uniaxial Stress in Si up to 4 GPa

Cited by 20 publications

References 20 publications

Young’s Modulus, Residual Stress, and Crystal Orientation of Doubly Clamped Silicon Nanowire Beams

Young’s Modulus, Residual Stress, and Crystal Orientation of Doubly Clamped Silicon Nanowire Beams

Hole Mobility Boost of Ge p-MOSFETs by Composite Uniaxial Stress and Biaxial Strain

Current transport models for nanoscale semiconductor devices

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