Hole-capture competition between a single quantum dot and an ionized acceptor

Abstract

We study the competition of hole capture between an In(Ga)As quantum dot and a directly adjacent ionized impurity in view of spin-photon interfaces. The Kerr rotation noise spectroscopy at 4.2 K shows that the hole-capture probability of the In(Ga)As quantum dot is about one order of magnitude higher compared to the hole-capture probability of the ionized impurity and suggests that a simultaneous occupation of quantum dot and impurity by a hole is efficiently suppressed due to Coulomb interaction. A theoretical model of interconnected spin and charge noise allows the quantitative specification of all relevant time scales. arXiv:1808.05574v1 [cond-mat.mes-hall]

Anomalous light-induced broadening of the spin-noise resonance in cesium vapor

“…While various aspects of perturbations in the SNS of semiconductors and semiconductor nanosystems are widely studied, see, e.g., Refs. [19][20][21][22][23][24][25], much less is known about these effects in atomic systems. In Refs.…”

Theory of optically detected spin noise in nanosystems

“…In Fig. 18 we show the spectra of Kerr rotation measured for a single quantum dot [172,173]. Additional extensions of the spin noise spectroscopy are provided by the spin-orbit interaction, which can lead to the lifting of the spin degeneracy in the many-valley semiconductors.…”