Hole and electron trapping in ion implanted thermal oxides and SIMOX

Effects of fin width on memory windows in FinFET ZRAMs

“…12, where the memory window is also plotted vs. pulse time. These results reinforce our previous observation that the transient current during and after a program- ming pulse is not only a consequence of charge stored in the body, but also can result from the additional substrate potential induced by shallow traps in the SOI buried oxide [18][19][20][21][22]. For very short programming times and/or low programming voltages, little charge trapping is observed.…”

“…Similar charge trapping effects to those that reinforce the memory windows observed in Figs. 4 and 5 have been observed in the gate oxides of nonvolatile memory devices programmed via hot carrier injection and/or by exploiting the charge trapping properties of nanocrystals in the oxide [14][15][16][17], as well as the near-interfacial buried oxides of planar SOI devices [18][19][20][21]. However, to our knowledge, their potential roles in reinforcing and stabilizing ZRAM stored charge states have yet to be recognized and/ or exploited.…”

Influence of total-dose radiation on the electrical characteristics of SOI MOSFETs

“…One technique that has been proposed to reduce the amount of net radiation-induced positive trapped charge is to implant the buried oxide with silicon [36,37]. The silicon implant creates electron traps throughout the buried oxide.…”

Диффузионно-контролируемый рост нанокристаллов Ge в пленках SiO-=SUB=-2-=/SUB=- в условиях ионного синтеза под высоким давлением

“…Это делает нанокристаллы гер-мания более привлекательными для изучения квантово-размерного эффекта в непрямозонных полупроводниках. С точки зрения практического использования важным свойством, которым обладают нанокристаллы кремния и германия в пленках SiO 2 , является способность захваты-вать и хранить носители зарядов [1][2][3]. При этом сечение захвата для электронов в них на несколько порядков величины больше, чем для дырок.…”