History of Diffusion

Cunningham, Robert E.; Williams, R. J. J.

doi:10.1007/978-1-4757-4983-0_6

Cited by 1 publication

(1 citation statement)

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“…This phenomenon may be attributed to the result of gas diffusion in the cavity [ 24 ]. During the etching process, the lower pressure means that the by-products of the etching are desorbed from the cavity-bottom surface and pumped out at a fast rate and do not significantly hinder the diffusion of reactive gases into the bottom of the cavity.…”

Section: Resultsmentioning

confidence: 99%

Study of Selective Dry Etching Effects of 15-Cycle Si0.7Ge0.3/Si Multilayer Structure in Gate-All-Around Transistor Process

Liu

Zhou

et al. 2023

Nanomaterials

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Gate-all-around (GAA) structures are important for future logic devices and 3D-DRAM. Inner-spacer cavity etching and channel release both require selective etching of Si0.7Ge0.3. Increasing the number of channel-stacking layers is an effective way to improve device current-driving capability and storage density. Previous work investigated ICP selective etching of a three-cycle Si0.7Ge0.3/Si multilayer structure and the related etching effects. This study focuses on the dry etching of a 15-cycle Si0.7Ge0.3/Si multilayer structure and the associated etching effects, using simulation and experimentation. The simulation predicts the random effect of lateral etching depth and the asymmetric effect of silicon nanosheet damage on the edge, both of which are verified by experiments. Furthermore, the study experimentally investigates the influence and mechanism of pressure, power, and other parameters on the etching results. Research on these etching effects and mechanisms will provide important points of reference for the dry selective etching of Si0.7Ge0.3 in GAA structures.

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Section: Resultsmentioning

confidence: 99%