Highly uniform silicon field emitter arrays fabricated using a trilevel resist process

Karaulac, Nedeljko; Rughoobur, Girish; Akinwande, Akintunde I.

doi:10.1116/1.5131656

Cited by 19 publications

(9 citation statements)

References 27 publications

(34 reference statements)

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“…The III-N SAGFEAs demonstrated in this work are also compared with SAGFEAs based on other materials (Fig. 5(b)) [3], [4], [8], [26]- [28]. When setting an overdrive voltage (V OV = V GE -V GE,ON ) of 20 V, the J A of our AlGaN SAGFEAs approaches 100 mA/cm 2 and is comparable with state-of-the-art Si SAGFEAs.…”

Section: Resultsmentioning

confidence: 51%

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Stable and High Performance AlGaN Self-Aligned-Gate Field Emitter Arrays

Shih

Rughoobur

Engel

et al. 2022

IEEE Electron Device Lett.

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AlGaN alloys are promising for field emission devices due to their low electron affinities. However, there have been limited demonstrations of AlGaN vacuum transistors so far. This paper combines a new self-alignedgate (SAG) process and digital-etching tip sharpening to demonstrate three-terminal AlGaN SAG field emitter arrays (FEAs). These devices show a turn-on voltage of 19.5 V and an anode current density (J A ) of 100 mA/cm 2 at an overdrive voltage of 20 V, which are comparable with best Si devices. The AlGaN SAGFEAs can operate in DC mode at a fixed gate-emitter voltage (V GE ) with J A of 3-5 mA/cm 2 for at least 5 hours without a significant degradation. The gate leakage does not increase after the long DC operation, suggesting high-performance and stable AlGaN vacuum transistors.

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Section: Resultsmentioning

confidence: 51%

“…5. (a) S-K chart of fabricated III-N self-align-gated FEAs and (b) benchmark of different materials FEAs[3],[4],[8],[26]-[28]. The same-color labels in (a) represent F-N parameters of different transfer characteristics from one FEA after conditioning.…”

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confidence: 99%

Stable and High Performance AlGaN Self-Aligned-Gate Field Emitter Arrays

Shih

Rughoobur

Engel

et al. 2022

IEEE Electron Device Lett.

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“…Such CNTs are typically bundled [55][56][57] and slightly bent, conditions that are incompatible with use as nanocantilevers. A silicon-based massive nanocantilever 58 and field emitter 59,60 have been fabricated using a semiconductor process.…”

Section: Introductionmentioning

confidence: 99%

Artificial-intelligence-assisted mass fabrication of nanocantilevers from randomly positioned single carbon nanotubes

et al. 2023

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Nanoscale cantilevers (nanocantilevers) made from carbon nanotubes (CNTs) provide tremendous benefits in sensing and electromagnetic applications. This nanoscale structure is generally fabricated using chemical vapor deposition and/or dielectrophoresis, which contain manual, time-consuming processes such as the placing of additional electrodes and careful observation of single-grown CNTs. Here, we demonstrate a simple and Artificial Intelligence (AI)-assisted method for the efficient fabrication of a massive CNT-based nanocantilever. We used randomly positioned single CNTs on the substrate. The trained deep neural network recognizes the CNTs, measures their positions, and determines the edge of the CNT on which an electrode should be clamped to form a nanocantilever. Our experiments demonstrate that the recognition and measurement processes are automatically completed in 2 s, whereas comparable manual processing requires 12 h. Notwithstanding the small measurement error by the trained network (within 200 nm for 90% of the recognized CNTs), more than 34 nanocantilevers were successfully fabricated in one process. Such high accuracy contributes to the development of a massive field emitter using the CNT-based nanocantilever, in which the output current is obtained with a low applied voltage. We further showed the benefit of fabricating massive CNT-nanocantilever-based field emitters for neuromorphic computing. The activation function, which is a key function in a neural network, was physically realized using an individual CNT-based field emitter. The introduced neural network with the CNT-based field emitters recognized handwritten images successfully. We believe that our method can accelerate the research and development of CNT-based nanocantilevers for realizing promising future applications.

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“…Additionally, pattern transfer into an anti-reflective coating utilizing a nitrogen plasma largely simplifies the ability to achieve a highly homogeneous polymer soft mask [51]. Moreover, DTLbased mask patterns are suitable for use in CM-ICP RIE systems to achieve SiNW arrays at the wafer scale, which can then be allocated to a specific location on the substrate in areas of μm 2 -cm 2 sizes by applying a hybrid lithography step [52,53].…”

Section: Introductionmentioning

confidence: 99%

Large Dense Periodic Arrays of Vertically Aligned Sharp Silicon Nanocones

et al. 2022

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Convex cylindrical silicon nanostructures, also referred to as silicon nanocones, find their value in many applications ranging from photovoltaics to nanofluidics, nanophotonics, and nanoelectronic applications. To fabricate silicon nanocones, both bottom-up and top-down methods can be used. The top-down method presented in this work relies on pre-shaping of silicon nanowires by ion beam etching followed by self-limited thermal oxidation. The combination of pre-shaping and oxidation obtains high-density, high aspect ratio, periodic, and vertically aligned sharp single-crystalline silicon nanocones at the wafer-scale. The homogeneity of the presented nanocones is unprecedented and may give rise to applications where numerical modeling and experiments are combined without assumptions about morphology of the nanocone. The silicon nanocones are organized in a square periodic lattice, with 250 nm pitch giving arrays containing 1.6 billion structures per square centimeter. The nanocone arrays were several mm2 in size and located centimeters apart across a 100-mm-diameter single-crystalline silicon (100) substrate. For single nanocones, tip radii of curvature < 3 nm were measured. The silicon nanocones were vertically aligned, baring a height variation of < 5 nm (< 1%) for seven adjacent nanocones, whereas the height inhomogeneity is < 80 nm (< 16%) across the full wafer scale. The height inhomogeneity can be explained by inhomogeneity present in the radii of the initial columnar polymer mask. The presented method might also be applicable to silicon micro- and nanowires derived through other top-down or bottom-up methods because of the combination of ion beam etching pre-shaping and thermal oxidation sharpening. Graphic abstract A novel method is presented where argon ion beam etching and thermal oxidation sharpening are combined to tailor a high-density single-crystalline silicon nanowire array into a vertically aligned single-crystalline silicon nanocones array with < 3 nm apex radius of curvature tips, at the wafer scale.

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Highly uniform silicon field emitter arrays fabricated using a trilevel resist process

Abstract: Load line analysis showing AIE used to calculate the current sensitivity for field emitter tips with radius r 1 < r 2 < r 3 (blue lines) in series with (a) small or large resistor, (b) FET or nanowire, and (c) FET or nanowire with reduced tip radius distribution (red lines).

Cited by 19 publications

References 27 publications

Stable and High Performance AlGaN Self-Aligned-Gate Field Emitter Arrays

Stable and High Performance AlGaN Self-Aligned-Gate Field Emitter Arrays

Artificial-intelligence-assisted mass fabrication of nanocantilevers from randomly positioned single carbon nanotubes

Large Dense Periodic Arrays of Vertically Aligned Sharp Silicon Nanocones

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