Highly Uniform, Self-Compliance, and Forming-Free ALD $\hbox{HfO}_{2}$ -Based RRAM With Ge Doping

Wang, Zhongrui; Zhu, Weiguang; Du, An; Wu, Lifu; Fang, Zheng; Tran, Xuan Anh; Liu, W. J.; Zhang, Kailiang; Yu, Hongya

doi:10.1109/ted.2012.2182770

Cited by 82 publications

(47 citation statements)

References 23 publications

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“…2(b). Subsequently, when the applied bias continues to increase, the ITO interface can undergo soft breakdown and cause another hetero-conductivepath, which acts as a self-built resistor [12], [13], as shown in Fig. 2(c).…”

Section: Methodsmentioning

confidence: 99%

Impact of Electroforming Current on Self-Compliance Resistive Switching in an ${\rm ITO}/{\rm Gd{:}SiO}_{\rm x}/{\rm TiN}$ Structure

Tseng

Chang

et al. 2013

IEEE Electron Device Lett.

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This letter investigates self-compliance behavior for nonvolatile resistance random access memory using the indium tin oxide (ITO)/Gd:SiO x /TiN structure. Different current compliances in the electroforming process results in different trends in the set process, including a different self-compliance scale and one-or two-step set behaviors. The oxygen ions generated during the electroforming and set process drift to ITO, inducing a semiconductor-like ITO interface formation, which can be regarded as a self-built series resistor.Index Terms-Indium tin oxide (ITO), resistance switching, resistive random access memory (ReRAM), self-built current compliance.

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Section: Methodsmentioning

confidence: 99%

Impact of Electroforming Current on Self-Compliance Resistive Switching in an ${\rm ITO}/{\rm Gd{:}SiO}_{\rm x}/{\rm TiN}$ Structure

Tseng

Chang

et al. 2013

IEEE Electron Device Lett.

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“…The same polarity was observed in similar devices described in previous researches. 13 14 After the Hf metal layer deposition and PMA processes, Pt/Hf/HfO 2 /TiN RRAM devices show reverse polarity operation (i.e., the set operation by a positive bias, and the reset operation by a negative bias) in a stable resistive switching situation, as shown in Figure 1(b). The experimental results and literatures review in this study will confirm that the reverse polarity is correlated with interface-producing and conduction mechanism, transforming between two structures.…”

Section: Methodsmentioning

confidence: 99%

Polarity Reversion of the Operation Mode of HfO<SUB>2</SUB>-Based Resistive Random Access Memory Devices by Inserting Hf Metal Layer

Peng

Chang²,

Lin³

et al. 2013

j nanosci nanotechnol

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The reversion of polarity within bipolar resistive switching operation occurs in Pt/HfO2/TiN and Pt/Hf/HfO2/TiN resistive random access memory devices. This reversion of voltage polarity is the result of interface generation which induces a conduction mechanism transformation from Poole-Frenkel emission to space charge limited current mechanism. To prove the reversion of polarity, this study uses curve fitting of I-V relations to verify the conduction mechanism theoretically and physical analysis to verify the oxygen ion distribution practically. The proposed Pt/Hf/HfO2/TiN devices exhibit good resistive switching characteristics, such as good uniformity, low voltage operation, robust endurance (10(3) dc sweep), and long retention (3 x 10(4) s at 85 degrees C).

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“…A similar compliance to maximum current is needed during every SET transition to ensure repeatability of the LRS. This need is obviated if the device is self-compliant [25].…”

Section: A Rram Device Physicsmentioning

confidence: 99%

Oscillatory Neural Networks Based on TMO Nano-Oscillators and Multi-Level RRAM Cells

Jackson

Sharma

Bain

et al. 2015

IEEE J. Emerg. Sel. Topics Circuits Syst.

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In massively parallel computational tasks, such as pattern recognition, conventional computing architectures have insufficient power efficiency for energy constrained environments. This has made alternative architectures, such as neuromorphic computing, increasingly attractive. Oscillatory neural networks (ONNs) are one promising architecture, but efficient hardware implementations have been limited by shortcomings in CMOS technology, specifically in the efficient implementation of oscillators and synaptic weights. The authors have recently demonstrated that metal-oxide based resistive switching (RRAM) structures can be engineered to create low-power, scalable, voltage-controlled oscillators that utilize inherent meta-stability in the device. This work proposes an RRAM-based ONN that couples oscillatory "neurons" through weighted "synapses" using oscillator phase as the state-variable. This paper demonstrates a robust architecture using only a few logic gates per neuron to implement phase initialization and locking of these oscillators, and demonstrate their capability to identify stored patterns from noisy inputs. Using measured characteristics of RRAMs as oscillators and programmable resistors, compact models are derived and used to simulate both an 8-neuron and 20-neuron network.Index Terms-Metal-oxide resistive memory, neuromorphic computing, oscillatory neural networks, RRAM-based nano-oscillators.

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Highly Uniform, Self-Compliance, and Forming-Free ALD $\hbox{HfO}_{2}$ -Based RRAM With Ge Doping

Cited by 82 publications

References 23 publications

Impact of Electroforming Current on Self-Compliance Resistive Switching in an ${\rm ITO}/{\rm Gd{:}SiO}_{\rm x}/{\rm TiN}$ Structure

Impact of Electroforming Current on Self-Compliance Resistive Switching in an ${\rm ITO}/{\rm Gd{:}SiO}_{\rm x}/{\rm TiN}$ Structure

Polarity Reversion of the Operation Mode of HfO<SUB>2</SUB>-Based Resistive Random Access Memory Devices by Inserting Hf Metal Layer

Oscillatory Neural Networks Based on TMO Nano-Oscillators and Multi-Level RRAM Cells

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