Highly Transparent Chemically Amplified ArF Excimer Laser Resists by Absorption Band Shift for 193 nm Wavelength

Abstract

Naphthalene-containing chemically amplified resists for ArF excimer laser exposure are proposed, based on the concept of the absorption band shift by conjugation extension. Newly developed ArF excimer resists show a high transparency at 193 nm wavelength, a high sensitivity and a high contrast. The sensitivity of the resist is 150 mJ/cm2, which is 20 times greater than that of poly(methylmethacrylate) (PMMA). Furthermore, a 0.16 µ m pattern could be successfully fabricated by an ArF excimer laser stepper with 0.55 numerical aperture (N A) projection lens.

Measuring acid generation efficiency in chemically amplified resists with all three beams

“…Sixteen chemically amplified resists were prepared in a 4ϫ4 experimental array utilizing four PAGs of concentration 80 mol/cm 3 based on solids ͑see Table I͒, [22][23][24][25][26][27][28][29][30][31][32][33][34][35] and four levels of base ͓1,8-diazabicyclo͓5.4.0͔undec-7-ene ͑DBU͒ at 0, 3, 6, and 10 mol % versus PAG͔. The polymer is an advanced ESCAP-type material composed primarily of p-hydroxystyrene and t-butyl acrylate monomers.…”

Mechanism for low-etching resistance and surface roughness of ArF photoresist during plasma irradiation

“…The PAG was triphenylsulfonium-trifluoromethane-sulfonate ͑TPS-OTf͒. 21 The ArF photoresist polymer films were spin coated on silicon wafers and heated at 120°C on a hotplate for 2 min. As all processes were conducted in a yellow room, we could investigate the effects of irradiation only.…”

Resist material requirements for 256m and 1g bit dram fabrication.

“…Methacrylate, alicyclic and naphthalene polymers have been reported recently as the high transparency ArF single-layer resist material; Poly(methylmethacrylate-co-t-butylmethacrylate-co-methacrylic acid) P(MMA-tBuMA-MAA) [13], Poly(isobornylmethacrylate-co-methylmethacrylate-co-tbutylmethacrylate-co-methacrylic acid) P(IBMA-MMA-tBuMA-MAA) [17], Poly(tricyclodecanylacrylate-co-tetrahydropyranylmethacrylate-co-methacrylic acid) P(TCDA-THPMA-MAA) [14], Poly(adamantylmethacrylate-co-3-oxocyclohexylmethacrylate) P(AdMA-OCHMA) [l5] and Poly(tert-butylmethacrylate-co-methylmethacrylate-co-methacrylic acid-co-2-nahthylmethacrylate) P(tBuMA-MMA-MAA-2NpMA) [16]. They have a transparency needed as ArF resist.…”