2015
DOI: 10.1088/2053-1591/2/9/096401
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Highly transparent and reproducible nanocrystalline ZnO and AZO thin films grown by room temperature pulsed-laser deposition on flexible Zeonor plastic substrates

Abstract: Films also displayed high transmission greater than 95 % in some cases, in the 400 -800 nm wavelength range. The low temperature photoluminescence spectra of all the ZnO and AZO films showed intense near band edge emission. A considerable spread from semi-insulating to ntype conductive was observed for the films, with resistivity ~10 3 Ω cm and Hall mobility in 4 -14 cm 2 /V-s range, showing marked dependences on film thickness and oxygen pressure.Applications in the fields of microfluidic devices and flexible… Show more

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Cited by 19 publications
(12 citation statements)
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“…These values correspond to the (002) reflection of the wurtzite structure (ICSD# 082029), showing a preferred orientation with the c-axis perpendicular to the ZnO and AZO films surface. The peak position was similar to that reported previously for ZnO thin films produced by plasma deposition methods [31].The crystallite sizes of the deposited films were measured using Scherrer equation and the results were 38 and 23 nm for ZnO and AZO, respectively [32]. Software analyses (Xpert high score) of the diffraction peak profiles also indicated higher lattice strain for AZO than for ZnO thin film, likely due to Al incorporation in the ZnO lattice.…”
Section: Resultssupporting
confidence: 81%
“…These values correspond to the (002) reflection of the wurtzite structure (ICSD# 082029), showing a preferred orientation with the c-axis perpendicular to the ZnO and AZO films surface. The peak position was similar to that reported previously for ZnO thin films produced by plasma deposition methods [31].The crystallite sizes of the deposited films were measured using Scherrer equation and the results were 38 and 23 nm for ZnO and AZO, respectively [32]. Software analyses (Xpert high score) of the diffraction peak profiles also indicated higher lattice strain for AZO than for ZnO thin film, likely due to Al incorporation in the ZnO lattice.…”
Section: Resultssupporting
confidence: 81%
“…In addition, the electron diffraction patterns of AZO/Al 2 O 3 multilayers manifested the structure of crystalline/amorphous. Both AZO layers grown on the anodized AlO x :Nd gate insulator and PLD prepared Al 2 O 3 layer showed the similar diffraction plane of (002) (common in as-deposited PLD grown AZO or ZnO as reported [ 20 , 21 ]), suggesting that the AZO/Al 2 O 3 heterojunction unit can be well repeated by PLD method without the effect of different underlayers. Moreover, there were no obvious structural differences between the anodized AlO x :Nd gate insulator and PLD grown Al 2 O 3 layers.…”
Section: Resultssupporting
confidence: 69%
“…COPs are also recognized for their low water absorption and high mechanical and dimensional stability when in contact with liquids, and as such make extremely suitable platforms for microfluidic devices when compared with previously used alternatives. Owing to these exceptional properties, COP-based devices have been utilised for various applications such as substrates for chromatographic stationary phases [2] and microfluidic devices for the analysis of drugs [3], IR waveguide coatings [4] and as substrates for laser deposited nanomaterials [5].…”
Section: Introductionmentioning
confidence: 99%