Highly Transparent and Conductive Indium‐Free Vanadates Crystallized at Reduced Temperature on Glass Using a 2D Transparent Nanosheet Seed Layer

Boileau, A.; Hurand, S.; Baudouin, F.; Lüders, U.; Dallocchio, Marie; Bérini, Bruno; Cheikh, Aïmane; David, Adrian; Paumier, F.; Girardeau, T.; Marie, Philippe; Labbé, Christophe; Cardin, Julien; Aureau, Damien; Frégnaux, Mathieu; Guilloux‐Viry, Maryline; Prellier, W.; Dumont, Y.; Demange, Valérie; Fouchet, Arnaud

doi:10.1002/adfm.202108047

Cited by 10 publications

(12 citation statements)

References 65 publications

(125 reference statements)

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“…We noted that the FOM values of SVO films grown on CNO nanosheets were lower than those of SVO films grown on single crystals by MBE. That is not consistent with the reported data in reference [ 27 ] even though SVO films in this study had lower resistivity than the reported data [ 27 ] and similar transmittance values (see SrVO 3 note in SI). Furthermore, Figure 3e shows FOM values of SMO and SNO in comparison with other films reported in the literature in the UV spectrum of 3.85–4.5 eV.…”

Section: Resultscontrasting

confidence: 89%

“…showed that correlated CaVO 3 and SrVO 3 (SVO) films with a thickness of 40 nm on Ca 2 Nb 3 O 10 (CNO) nanosheets on glass had the RT optical resistivity values of 260 and 274 µΩ cm, respectively, and the high optical transmittance of about 75% at 550 nm (2.25 eV). [ 27 ] We also observed similar resistivity values of SVO on CNO nanosheets [ 27 ] due to the low growth temperature and/or the influence of the substrate materials (see SrVO 3 note in Supporting Information). Furthermore, it was revealed that 4d correlated metals SrMoO 3 (SMO) and SrNbO 3 (SNO) have higher UV‐vis transmittance compared to 3d SVO due to interband transitions occurring at higher photon energies of 4.3–4.8 eV, [ 9,14,17,19 ] while these three correlated metals on single crystal substrates were reported to have similar resistivity values of around 30 µΩ cm.…”

Section: Introductionsupporting

confidence: 61%

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Correlated Metals Transparent Conductors with High UV to Visible Transparency on Amorphous Substrates

Répécaud

et al. 2022

Adv Materials Inter

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strategy for conventional transparent conducting oxides (TCOs) is to resort to degenerately dope wide-bandgap semiconductors to achieve the two key properties: electrical conductivity and optical transparency. Wide bandgap semiconductors are selected as host materials, which have the interband transitions above the visible spectrum, whereas dopants increase carrier density and thus electrical conductivity. Tin-doped indium oxides (ITOs) have been widely used because of its best balance of high electrical conductivity and optical transparency in the visible spectrum. [3] However, the increasing use of ITO as TCOs has resulted in the increase in the cost of ITO due to the limited availability of indium ore. [4] Meanwhile, many other applications, such as solar blind detection, ultraviolet (UV) lithography, UV light-emitting diodes, and UV curing, require transparent conductors in the UV spectrum. [5][6][7][8] However, conventional TCOs with high conductivity present low transmittance on the UV side of the spectrum. [1] Recently, an alternative design strategy has been proposed to use correlated metals with the intrinsic high carrier density exhibiting strong electron correlations to achieve both high electrical conductivity, thus low resistivity, and optical transparency in the UV-visible spectral range, overcoming the limitations of conventional TCOs. [9][10][11][12][13][14][15][16][17][18][19] It has been shown that as correlated metal films on single crystal substrates get thin, they maintain low resistivity and thus low sheet resistance at room temperature (RT) whereas their optical transmittance is comparable to (or higher than) conventional TCOs in the visible (or UV) spectrum. [9,10,17] However, the epitaxy so far required expensive and size-limited single crystal substrates, which impedes the application of correlated metals as TCOs.Meanwhile, oxide nanosheets drew attention because they can be used as buffer layers to promote the growth of highquality and thus high-performance transition metal oxide films regardless the supporting substrates. [20][21][22][23][24][25][26] Almost full coverage of oxide nanosheets can be obtained on virtually any flat substrates without the limitation of the substrate size by using Langmuir-Blodgett method. [21,24,25] Boileau et al. showed that correlated CaVO 3 and SrVO 3 (SVO) films with a thickness of 40 nm on Ca 2 Nb 3 O 10 (CNO) nanosheets on glass had the RT Correlated metals with high carrier density and strongly correlated electron effects provide an alternative route to achieve transparent conducting materials, different from the conventional degenerately doped wide-bandgap transparent conducting oxides (TCO). The extremely low electrical resistivity and high optical transparency in the ultraviolet-visible spectral range shown in 4d correlated metals present an advantage over conventional TCOs. However, most of the 4d correlated metals are grown epitaxially on single crystal substrates. Here, it has been shown that Ca 2 Nb 3 O 10 nanosheets with different buffer laye...

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Section: Resultscontrasting

confidence: 89%

Section: Introductionsupporting

confidence: 61%

Correlated Metals Transparent Conductors with High UV to Visible Transparency on Amorphous Substrates

Répécaud

et al. 2022

Adv Materials Inter

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“…For both kinds of films, epitaxial and polycrystalline, the transmittance decreases with the wavelength between 480 and 400 nm due to a characteristic interband transition of SVO from the low-lying O bands to the V valence band. 3 On the other hand, films heated to 250 °C no longer show this decrease in transmittance which can be explained by the loss of For the epitaxial films (Figure 7a), η T show a maximum for the aging temperature of 200 °C, related to its excellent transmission of about 90% at 500 nm. For the polycrystalline films (Figure 7d), η T slightly decreases with aging up to 200 °C and abruptly increases for an aging at 250 °C.…”

Section: ■ Results and Discussionmentioning

confidence: 96%

“…Interestingly, the as-deposited sample still shows a metallic temperature dependence, indicating that the grain boundaries do not perturb strongly the electrical conduction, as was also observed in optical measurements. 3 The influence of the grain boundaries on the electrical transport seems to be also limited, as the charge density is observed to be 1.7 × 10 22 cm −3 . This value, very close to the theoretical value, may indicate a lesser influence of oxygen vacancies than in the epitaxial films, but the chemically and structurally perturbed grain boundary regions are probably trapping some charges.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Artificial Aging of Thin Films of the Indium-Free Transparent Conducting Oxide SrVO₃

Rath

Mezhoud

Khaloufi

et al. 2023

ACS Appl. Mater. Interfaces

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SrVO3 (SVO) is a prospective candidate to replace the conventional indium tin oxide (ITO) among the new generation of transparent conducting oxide (TCO) materials. In this study, the structural, electrical, and optical properties of SVO thin films, both epitaxial and polycrystalline, are determined during and after heat treatments in the 150–250 °C range and under ambient environment in order to explore the chemical stability of this material. The use of these relatively low temperatures speeds up the natural aging of the films and allows following the evolution of their related properties. The combination of techniques rather sensitive to the film surface and of techniques sampling the film volume will emphasize the presence of a surface oxidation evolving in time at low annealing temperatures, whereas the perovskite phase is destroyed throughout the film for treatments above 200 °C. The present study is designed to understand the thermal degradation and long-term stability issues of vanadate-based TCOs and to identify technologically viable solutions for the application of this group as new TCOs.

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“…The crystallization of complex oxides from amorphous precursor layers is a promising route toward the creation of epitaxial materials and three-dimensional heterostructures with an expanded range of compositions and geometries . Seeding methods based on nanocrystals or transferred membranes initiate nucleation and remove the need for a single-crystal substrate. − Seeded solid-phase epitaxy (SPE) expands the possibility of developing functional epitaxial layers for geometries and materials for which templating substrates are not available, such as single-crystal growth over large areas on amorphous substrates or on crystalline substrates with lattice symmetry that is different from the crystallizing material. The crystal structure and orientation of the seed crystal provides a template for lateral crystallization. , Complex strain states can evolve as a result of the thin-film stress associated with the density changes across the crystal–amorphous interface.…”

mentioning

confidence: 99%

Crystallographic Rotation during Solid-Phase Epitaxy of SrTiO₃ from Nanoscale Seed Crystals

Marks

Liu

Chen

et al. 2022

Crystal Growth & Design

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The crystallization of amorphous complex oxide layers from isolated seed crystals presents an opportunity to remove geometric constraints posed by thin-film epitaxial growth methods employing single-crystal substrates. The crystallization processes initiated by a distribution of isolated nanoscale seeds occur in a state of mechanical stress that is different from planar thin-film epitaxy. The effects of this stress were probed in the crystallization of the model perovskite oxide SrTiO3 nucleated by isolated nanoscale SrTiO3 seeds. Synchrotron nanobeam scattering and diffraction were used to probe the spatial distribution of crystalline and amorphous SrTiO3. Contributions to the diffraction patterns from these components were identified using non-negative matrix factorization. Individual SrTiO3 crystallites exhibit a lattice rotation resulting from the density difference between amorphous and crystalline SrTiO3. Stress at the crystal–amorphous interface advancing from the seeds produces a rotation of the crystal lattice at a rate of tens of degrees per micron of crystallization in the plane of the film. The rate of the lattice rotation provides insight into the crystallization mechanism. The lattice rotation indicates that nanoscale morphological control during solid-phase epitaxial crystallization from nanocrystal seeds can be achieved by manipulating the interface stress between the amorphous and crystalline phases to control dislocation dynamics.

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Highly Transparent and Conductive Indium‐Free Vanadates Crystallized at Reduced Temperature on Glass Using a 2D Transparent Nanosheet Seed Layer

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Cited by 10 publications

References 65 publications

Correlated Metals Transparent Conductors with High UV to Visible Transparency on Amorphous Substrates

Correlated Metals Transparent Conductors with High UV to Visible Transparency on Amorphous Substrates

Artificial Aging of Thin Films of the Indium-Free Transparent Conducting Oxide SrVO₃

Crystallographic Rotation during Solid-Phase Epitaxy of SrTiO₃ from Nanoscale Seed Crystals

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Highly Transparent and Conductive Indium‐Free Vanadates Crystallized at Reduced Temperature on Glass Using a 2D Transparent Nanosheet Seed Layer

Abstract: The user has requested enhancement of the downloaded file.

Cited by 10 publications

References 65 publications

Correlated Metals Transparent Conductors with High UV to Visible Transparency on Amorphous Substrates

Correlated Metals Transparent Conductors with High UV to Visible Transparency on Amorphous Substrates

Artificial Aging of Thin Films of the Indium-Free Transparent Conducting Oxide SrVO3

Crystallographic Rotation during Solid-Phase Epitaxy of SrTiO3 from Nanoscale Seed Crystals

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Artificial Aging of Thin Films of the Indium-Free Transparent Conducting Oxide SrVO₃

Crystallographic Rotation during Solid-Phase Epitaxy of SrTiO₃ from Nanoscale Seed Crystals