Highly stable performance of flexible Hf0.6Zr0.4O2 ferroelectric thin films under multi-service conditions

Liu, Wenyan; Liao, Jiajia; Jiang, Jie; Zhou, Yue; Chen, Qiang; Mo, Sheng-Tao; Yang, Qingxiang; Peng, Qiangxiang; Jiang, Limei

doi:10.1039/c9tc05157k

Cited by 34 publications

(19 citation statements)

References 56 publications

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“…While, as mentioned earlier, stable FE performance in (pseudo)binary oxide thin films has been shown up to 150 °C in flexible Hf 0.6 Zr 0.4 O 2 thin films, and the ES performance of TiN/Hf 0.33 Zr 0.66 O 2 /Al 2 O 3 /Hf 0.33 Zr 0.66 O 2 /TiN capacitors is thermally stable up to 200 °C, it is imperative to also achieve strong ES performance in the range 150–250 °C. In this way, it will be possible to meet the requirements of the automotive (150–200 °C), power transmission (150–250 °C), aerospace (180–250 °C), and oil and gas industries (175–250 °C) .…”

Section: Challenges Potential Solutions and Future Opportunities For ...mentioning

confidence: 82%

“…The orthorhombic phase is stabilized by a series of effects, including doping, strain, capping layer, oxygen vacancies, thermal expansion mismatch, surface energy, etc. ,, However, the aforementioned parameters are often coupled (e.g., strain and oxygen vacancies), and so future work will require careful decoupling of these parameters. Recently, a polar rhombohedral phase was also reported in ZrO 2 and Hf 0.5 Zr 0.5 O 2 thin films. − There is promise also for HfO 2 and ZrO 2 materials in non-volatile memory devices, multiferroics, FE tunnel junctions, and field effect transistors. − However, there is limited work on ES capacitors. Thus, we focus the rest of this review on the current status and prospects of using HfO 2 , ZrO 2 , and HZO in ES capacitors.…”

Section: Hfo2 and Zro2-based Materialsmentioning

confidence: 99%

“…Reliable FE performance up to 150 °C has also been achieved in flexible Hf 0.6 Zr 0.4 O 2 films, which makes these materials attractive for flexible ES capacitors. In fact, conferring flexibility to electronics can dramatically enhance applications for the emerging IoT fields .…”

Section: Hfo2 and Zro2-based Materialsmentioning

confidence: 99%

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Advances in Dielectric Thin Films for Energy Storage Applications, Revealing the Promise of Group IV Binary Oxides

et al. 2021

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Among currently available energy storage (ES) devices, dielectric capacitors are optimal systems owing to their having the highest power density, high operating voltages, and a long lifetime. Standard highperformance ferroelectric-based ES devices are formed of complexcomposition perovskites and require precision, high-temperature thinfilm fabrication. The discovery of ferroelectricity in doped HfO 2 in 2011 at the nanoscale was potentially game-changing for many modern technologies, such as field effect transistors, non-volatile memory, and ferroelectric tunnel junctions. This is because HfO 2 is a well-established material in the semiconductor industry, where it is used as a gate dielectric. On the other hand, (pseudo)binary HfO 2 and ZrO 2 -based materials have received much less attention for ES capacitors, even though antiferroelectric HfO 2 and ZrO 2 -based thin films show strong promise. This Focus Review summarizes the current status of conventional polymer and perovskite ferroic-based ES. It then discusses recent developments in, and proposes new directions for, antiferroelectric and ferroelectric group IV oxides, namely HfO 2 and ZrO 2 -based thin films.

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Section: Challenges Potential Solutions and Future Opportunities For ...mentioning

confidence: 82%

Section: Hfo2 and Zro2-based Materialsmentioning

confidence: 99%

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Advances in Dielectric Thin Films for Energy Storage Applications, Revealing the Promise of Group IV Binary Oxides

et al. 2021

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“…[41] Previous studies showed that HZO thin films directly grown on flexible mica substrates had robust ferroelectricity and promising application potential in flexible electronics. [42][43][44][45] The distinct advantage of our freestanding HZO membranes is that they can be easily transferred to almost any substrate to fabricate electronic devices, including substrates that cannot be annealed at high temperatures. Here we transferred the HZO capacitors onto mica as an example to demonstrate the robust ferroelectricity of our freestanding HZO membranes in flexible electronic devices.…”

Section: Resultsmentioning

confidence: 99%

Large‐Scale Hf_0.5Zr_0.5O₂ Membranes with Robust Ferroelectricity

Zhong

Zhang

et al. 2022

Advanced Materials

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Hafnia‐based compounds have considerable potential for use in nanoelectronics due to their compatibility with complementary metal–oxide–semiconductor devices and robust ferroelectricity at nanoscale sizes. However, the unexpected ferroelectricity in this class of compounds often remains elusive due to the polymorphic nature of hafnia, as well as the lack of suitable methods for the characterization of the mixed/complex phases in hafnia thin films. Herein, the preparation of centimeter‐scale, crack‐free, freestanding Hf0.5Zr0.5O2 (HZO) nanomembranes that are well suited for investigating the local crystallographic phases, orientations, and grain boundaries at both the microscopic and mesoscopic scales is reported. Atomic‐level imaging of the plan‐view crystallographic patterns shows that more than 80% of the grains are the ferroelectric orthorhombic phase, and that the mean equivalent diameter of these grains is about 12.1 nm, with values ranging from 4 to 50 nm. Moreover, the ferroelectric orthorhombic phase is stable in substrate‐free HZO membranes, indicating that strain from the substrate is not responsible for maintaining the polar phase. It is also demonstrated that HZO capacitors prepared on flexible substrates are highly uniform, stable, and robust. These freestanding membranes provide a viable platform for the exploration of HZO polymorphic films with complex structures and pave the way to flexible nanoelectronics.

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“…[123] Flexible HZO films can acquire FE properties up to 420 K and are suitable for flexible cooling devices. [124] Flexible electronic devices can now be employed in devices associated with the development of the internet of things. [125] If films can be formed at temperatures as low as 400 °C, they may be able to be grown on flexible substrates.…”

Section: Zro 2 -And Hfo 2 -Based Materialsmentioning

confidence: 99%

Novel Fluorite‐Structured Materials for Solid‐State Refrigeration

Ali

Abbas

et al. 2022

Small

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Refrigeration based on the electrocaloric effect can offer many advantages over conventional cooling technologies in terms of efficiency, size, weight, and power source. The discovery of ferroelectric and antiferroelectric properties in fluorite‐based materials in 2011 has led to diverse applications related to memory (e.g., ferroelectric tunnel junctions, nonvolatile memory, and field‐effect transistors) and energy fields (e.g., energy storage and harvesting, electrocaloric refrigeration, and infrared detection). Fluorite‐based materials exhibit several properties not shared by most conventional materials (such as in terms of compatibility with complementary metal‐oxide semiconductors and 3D nanostructures, deposition thickness at the nanometer scale, and simple composition). Here, the electrocaloric refrigeration properties of fluorite‐based ferroelectric/antiferroelectric materials are reviewed by focusing on the advantages of ZrO2‐ and HfO2‐based materials (e.g., relative to conventional perovskite‐ and polymer‐based counterparts). Finally, the recent progress made in this research field are also discussed along with its future perspectives.

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Highly stable performance of flexible Hf_0.6Zr_0.4O₂ ferroelectric thin films under multi-service conditions

Abstract: Flexible HZO ferroelectric films with superior ferroelectricity, retention and fatigue endurance under multiple harsh conditions.

Cited by 34 publications

References 56 publications

Advances in Dielectric Thin Films for Energy Storage Applications, Revealing the Promise of Group IV Binary Oxides

Advances in Dielectric Thin Films for Energy Storage Applications, Revealing the Promise of Group IV Binary Oxides

Large‐Scale Hf_0.5Zr_0.5O₂ Membranes with Robust Ferroelectricity

Novel Fluorite‐Structured Materials for Solid‐State Refrigeration

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Highly stable performance of flexible Hf0.6Zr0.4O2 ferroelectric thin films under multi-service conditions

Abstract: Flexible HZO ferroelectric films with superior ferroelectricity, retention and fatigue endurance under multiple harsh conditions.

Cited by 34 publications

References 56 publications

Advances in Dielectric Thin Films for Energy Storage Applications, Revealing the Promise of Group IV Binary Oxides

Advances in Dielectric Thin Films for Energy Storage Applications, Revealing the Promise of Group IV Binary Oxides

Large‐Scale Hf0.5Zr0.5O2 Membranes with Robust Ferroelectricity

Novel Fluorite‐Structured Materials for Solid‐State Refrigeration

Contact Info

Product

Resources

About

Highly stable performance of flexible Hf_0.6Zr_0.4O₂ ferroelectric thin films under multi-service conditions

Large‐Scale Hf_0.5Zr_0.5O₂ Membranes with Robust Ferroelectricity