Highly Sensitive UV Detection Mechanism in AlGaN/GaN HEMTs

Zaidi, Zaffar H.; Houston, P.A.

doi:10.1109/ted.2013.2273618

Cited by 41 publications

(28 citation statements)

References 15 publications

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“…The source–drain photocurrents of AlGaN/GaN HEMT were increased by exposure of 280 nm and 365 nm UV light compared to the dark state. It can be explained by the increase of channel conductance due to the photogenerating carrier of AlGaN barrier and GaN channel layer 25 . In addition, it can be seen that the increase of source–drain photocurrent by UV exposure is obtained at the maximum pinch-off voltage just before the onset of the conventional saturation region shown in Fig.…”

Section: Effect Of Algan Barrier Thickness On Dark Current and Photocmentioning

confidence: 99%

“…At gate zero bias (V applied = 0 V), the Fermi level of the gate metal is same as the Fermi level of AlGaN/GaN, indicating that the HEMT device is in equilibrium condition 35 . When UV light is injected, excess holes generated on GaN buffer layer accumulate at the interface of GaN/substrate, causing the bands to bend down and a positive back-gate bias maintained by the photocurrent, which increases 2-DEG 25 . In particular, since the 2-DEG channel of HEMT with a 30 nm thick AlGaN barrier is much wider than a 10 nm thick AlGaN barrier, the ratio of photogenerated carriers by bending down in the 30 nm thick AlGaN barrier is relatively lower than that in the 10 nm thick AlGaN barrier shown in Fig.…”

Section: Schematic Band Biagram Of Algan/gan Hemts With Different Algmentioning

confidence: 99%

“…In the UV detection mechanism of AlGaN/GaN HEMT structure, it is known that the surface charge states and the absorption at the GaN channel layer increase 2-DEG channel conductance [22][23][24] . In particular, it has been reported that the optical gain is significantly dominated by absorption in the GaN channel layer rather than the AlGaN barrier 25 . Moreover, to further improve photoresponsivity of AlGaN/GaN heterostructure, nanostructures such as ZnO nanorods or graphene are introduced between the source and drain electrodes 26,27 .…”

Section: Gate-controlled Amplifiable Ultraviolet Algan/gan High-electmentioning

confidence: 99%

“…In the control of the source–drain current (I DS ), AlGaN/GaN HEMT structure can be significantly affected by the AlGaN barrier and gate bias 24 , 25 . In particular, the thickness and composition of the AlGaN barrier are major factors in the formation of 2-DEG, which can improve the channel conductance 24 .…”

Section: Introductionmentioning

confidence: 99%

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Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor

Baek

Lee

Cho

et al. 2021

Sci Rep

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Gate-controlled amplifiable ultraviolet phototransistors have been demonstrated using AlGaN/GaN high-electron-mobility transistors (HEMTs) with very thin AlGaN barriers. In the AlGaN/GaN HEMTs, the dark current between the source and drain increases with increasing thickness of the AlGaN barrier from 10 to 30 nm owing to the increase in piezoelectric polarization-induced two-dimensional electron gas (2-DEG). However, the photocurrent of the AlGaN/GaN HEMT decreases with increasing thickness of the AlGaN barrier under ultraviolet exposure conditions. It can be observed that a thicker AlGaN barrier exhibits a much higher 2-DEG than the photogenerated carriers at the interface between AlGaN and GaN. In addition, regardless of the AlGaN barrier thickness, the source–drain dark current increases as the gate bias increases from − 1.0 to + 1.0 V. However, the photocurrent of the phototransistor with the 30 nm thick AlGaN barrier was not affected by the gate bias, whereas that of the phototransistor with 10 nm thick AlGaN barrier was amplified from reduction of the gate bias. From these results, we suggest that by controlling the gate bias, a thin AlGaN barrier can amplify/attenuate the photocurrent of the AlGaN/GaN HEMT-based phototransistor.

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Section: Effect Of Algan Barrier Thickness On Dark Current and Photocmentioning

confidence: 99%

Section: Schematic Band Biagram Of Algan/gan Hemts With Different Algmentioning

confidence: 99%

Section: Gate-controlled Amplifiable Ultraviolet Algan/gan High-electmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor

Baek

Lee

Cho

et al. 2021

Sci Rep

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“…Other studies [4,5] have considered the absorption in the GaN buffer layer, but the photo-generated hole transport mechanisms in this region are not explained. In addition, it has been shown that the absorption of UV photons having energy higher than the bandgap of the AlGaN and the resulting gain is due to the generation of "photovoltages" (electron-hole separation) between the surface and the channel and the buffer/substrate interface and the channel [6].…”

Section: Introductionmentioning

confidence: 99%

A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance

Hachem

Trémouilles

Morancho

et al. 2018

Microelectronics Reliability

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Despite their potential in the field of power electronics, many reliability issues still affect the electrical performance of Gallium Nitride HEMT power devices and require an effort of analysis and understanding. The characterization of the on-state resistance of this transistor is necessary to understand the dynamics of some phenomena such as trapping. The degradation of this resistance has always been related to traps in the 2DEG channel, without taking into consideration possible contributions from the source and drain contacts (metal/semiconductor). In this work, resistance measurements, with and without UV illumination, are performed on three different technological options to highlight the effect of illumination on contact resistances.

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Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning

Razeen,

Kotekar‐Patil,

Jiang

et al. 2024

Adv Materials Inter

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AlGaN/GaN High Electron Mobility Transistor (HEMT) structures offer superior electrical and material properties that make them ideal for the fabrication of high‐performance Ultraviolet photodetectors (UV PDs), especially using the metal‐semiconductor‐metal (MSM) configuration. However, the metal layout of the MSM design and crystal defects in multi‐stack HEMTs can reduce photocurrent and degrade device performance. Nano‐structuring of the AlGaN/GaN surface with different nanofeatures is a promising approach to improve light absorption efficiency and increase device response. In this work, AlGaN/GaN HEMT MSM UV photodetectors with enhanced performance parameters by engineering the surface with periodic nanohole arrays are demonstrated. Optical simulations are used to optimize the design of the nanoholes' periodicity and depth. Unpatterned and nanohole‐patterned devices with varying nanohole depths are fabricated, and their performance shows substantial enhancement with the incorporation of nanoholes. The device with 40 nm deep nanoholes and 230 nm array periodicity shows the highest performance in terms of photocurrent (0.15 mA), responsivity (1.4 × 105 A W−1), UV/visible rejection ratio (≈103), and specific detectivity (4.9 × 1014 Jones). These findings present a HEMT‐compatible strategy to enhance UV photodetector performance for power optoelectronic applications, highlighting that nanohole patterning is a promising prospect for advancements in UV photodetection technology.

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Highly Sensitive UV Detection Mechanism in AlGaN/GaN HEMTs

Cited by 41 publications

References 15 publications

Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor

Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor

A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance

Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning

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