Highly sensitive InGaAs∕InAlAs quantum wire photo-FET

Ogura, Mutsuo; Sugaya, Takeyoshi

doi:10.1049/el:20060319

Cited by 5 publications

(1 citation statement)

References 5 publications

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“…1 Compared to conventional photodiodes with two electrodes, phototransistors have a strong advantage in controlling the detection sensitivity of light due to the presence of additional (third) electrode that can be adjusted to amplify the electrical signals induced by incoming photons. 2 Although inorganic phototransistors are already in the market, [3][4][5] their applications are limited to a small size detector because of the high temperature vacuum processes that intrinsically restrict such substrates in device fabrication. On this account, organic phototransistors have been introduced due to their expectations for low temperature (cost) fabrication, flexible and bendable shapes, light weight, large size, and suitability for converging technology (e.g., artificial eyes) applications.…”

Section: Introductionmentioning

confidence: 99%

Organic phototransistors with nanoscale phase-separated polymer/polymer bulk heterojunction layers

et al. 2011

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Low-cost detectors for sensing photons at a low light intensity are of crucial importance in modern science. Phototransistors can deliver better signals of low-intensity light by electrical amplification, but conventional inorganic phototransistors have a limitation owing to their high temperature processes in vacuum. In this work, we demonstrate organic phototransistors with polymer/polymer bulk heterojunction blend films (mixtures of p-type and n-type semiconducting polymers), which can be fabricated by inexpensive solution processes at room temperature. The key idea here is to effectively exploit hole charges (from p-type polymer) as major signaling carriers by employing p-type transistor geometry, while the n-type polymer helps efficient charge separation from excitons generated by incoming photons. Results showed that the present organic transistors exhibited proper functions as p-type phototransistors with ∼4.3 A W(-1) responsivity at a low light intensity (1 µW cm(-2)), which supports their encouraging potential to replace conventional cooled charge coupled devices (CCD) for low-intensity light detection applications.

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Section: Introductionmentioning

confidence: 99%

Organic phototransistors with nanoscale phase-separated polymer/polymer bulk heterojunction layers

et al. 2011

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Comparative optical studies of InAlAs/InP quantum wells grown by MOCVD on (311)A and (311)B InP planes

Smiri

Saidi

Mlayah

et al. 2020

J Mater Sci: Mater Electron

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High-performance n-type organic thin-film phototransistors based on a core-expanded naphthalene diimide

Qi¹,

Liao²,

Zheng³

et al. 2013

Applied Physics Letters

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High-performance n-type organic phototransistors (OPTs) based on a core-expanded naphthalene diimide are reported in this letter. The photo responsivity is as high as 27000 AW−1 and photocurrent/dark-current ratio reaches 1.1 × 107 under a white light illumination with a power density of 107 μWcm−2. In such OPTs, persistent photoconductivity (PPC) is observed, which can be instantly eliminated by a positive gate voltage pulse. This is explained in terms of trapped photo holes in the channel. In the light on-off switching test, such PPC also leads to well-reproducible memory effect in the OPTs.

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Highly sensitive InGaAs∕InAlAs quantum wire photo-FET

Cited by 5 publications

References 5 publications

Organic phototransistors with nanoscale phase-separated polymer/polymer bulk heterojunction layers

Organic phototransistors with nanoscale phase-separated polymer/polymer bulk heterojunction layers

Comparative optical studies of InAlAs/InP quantum wells grown by MOCVD on (311)A and (311)B InP planes

High-performance n-type organic thin-film phototransistors based on a core-expanded naphthalene diimide

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