Comparative optical studies of InAlAs/InP quantum wells grown by MOCVD on (311)A and (311)B InP planes

Smiri, Badreddine; Saidi, F.; Mlayah, Adnen; Maâref, H.

doi:10.1007/s10854-020-03625-y

Cited by 8 publications

(7 citation statements)

References 36 publications

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“…The AlAs-like modes here are LO phonon modes, corresponding to the relative vibrations between the Al and As atoms, which vibrate in the direction of phonon propagation. In samples A and B, the Raman peaks located at about 360 cm −1 (labeled as "5" and "g") are attributed to AlAs-like modes, in agreement with those reported in the literature [38,42]. The Raman results for samples A and B reveal that the (InAs) 4 (GaAs) 3 /InAlAs MQWs grown using the MEE mode exhibit excellent periodicity.…”

Section: Raman Measurements Of Low-temperature-grown (Inas)4(gaas)3/i...supporting

confidence: 87%

“…The Raman peaks labeled as "3", "b", and "c" in samples A and B are ascribed to the disorder-activated longitudinal acoustic (DALA) modes, consistent with the reports in the literature [37,38]. The molecular vibrational bands corresponding to the DALA modes reflect the vibrations of the atoms along the propagation direction but are affected by the structural disorder of the material.…”

Section: Raman Measurements Of Low-temperature-grown (Inas)4(gaas)3/i...supporting

confidence: 86%

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Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy

Liu,

Chen,

Kong

et al. 2024

Materials

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The growth of InGaAs quantum wells (QWs) epitaxially on InP substrates is of great interest due to their wide application in optoelectronic devices. However, conventional molecular beam epitaxy requires substrate temperatures between 400 and 500 °C, which can lead to disorder scattering, dopant diffusion, and interface roughening, adversely affecting device performance. Lower growth temperatures enable the fabrication of high-speed optoelectronic devices by increasing arsenic antisite defects and reducing carrier lifetimes. This work investigates the low-temperature epitaxial growth of InAs/GaAs short-period superlattices as an ordered replacement for InGaAs quantum wells, using migration-enhanced epitaxy (MEE) with low growth temperatures down to 200–250 °C. The InAs/GaAs multi-quantum wells with InAlAs barriers using MEE grown at 230 °C show good single crystals with sharp interfaces, without mismatch dislocations found. The Raman results reveal that the MEE mode enables the growth of (InAs)4(GaAs)3/InAlAs QWs with excellent periodicity, effectively reducing alloy scattering. The room temperature (RT) photoluminescence (PL) measurement shows the strong PL responses with narrow peaks, revealing the good quality of the MEE-grown QWs. The RT electron mobility of the sample grown in low-temperature MEE mode is as high as 2100 cm2/V*s. In addition, the photoexcited band-edge carrier lifetime was about 3.3 ps at RT. The high-quality superlattices obtained confirm MEE’s effectiveness for enabling advanced III-V device structures at reduced temperatures. This promises improved performance for applications in areas such as high-speed transistors, terahertz imaging, and optical communications.

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Section: Raman Measurements Of Low-temperature-grown (Inas)4(gaas)3/i...supporting

confidence: 87%

Section: Raman Measurements Of Low-temperature-grown (Inas)4(gaas)3/i...supporting

confidence: 86%

Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy

Liu,

Chen,

Kong

et al. 2024

Materials

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“…Figure 3 presents typical Raman scattering spectra at 300 K in In x Al 1−x As of various x In . The disorder-activated longitudinal acoustic (DALA) phonon of In x Al 1−x As with the middle composition range typically appears in the broad Raman band from 90 to 150 cm-1 [10,29]. This observation is attributed to the interactions between atomic clusters that occur during the growth of the epitaxial layer, leading to a disordered crystal arrangement at the interface.…”

Section: C Raman Resultsmentioning

confidence: 99%

Influence of Indium Composition on InAlAs QCLs

Badreddine,

Ilkay,

Abir

et al. 2024

Preprint

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In this work, we explored the impact of indium composition (x) on the structural and optical characteristics of InxAl1-xAs layers within the context of quantum cascade laser (QCL) structures grown on InP (100) substrates using the Metal Organic Vapor Phase Epitaxy (MOVPE) method. The quality of the InxAl1-xAs QCL is notably influenced by the growth with low indium composition, evident in terms of crystallinity, interface sharpness, and optical properties. The properties of the InAsP layer at the InP/ InxAl1-xAs junction are particularly sensitive to the indium composition. A drop below 0.52 in indium composition leads to a substantial lattice mismatch between the InxAl1-xAs layer and the InP substrate, typically exceeding [3 8]%. This mismatch induces defects or traps within the bandgap, significantly impacting carrier localization in this system. Our study demonstrates that cultivating InxAl1-xAs with a low indium concentration results in a strained (lattice-mismatched) InxAl1-xAs layer. This finding is significant as it can be leveraged to balance strain in high indium content InGaAs layers, particularly in the context of applications involving quantum cascade lasers.

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“…In turn, technological progress in this area could also benet the telecommunications industry when coupled with the development of highly anisotropic plasmonic materials with resonances in the SWIR. 270,271 Along with the design of SWIRresonant plasmonic materials, we must not forget the development of new resonant and non-resonant SERS reporters for NIR and SWIR applications, which has seen a stall in the recent years. However, developments in the design of NIR uorophores, which are typically also Raman active, can be leveraged to extract useful tips for future revival of this branch of research.…”

Section: Collection Set-upmentioning

confidence: 99%