Highly Sensitive Detection of Deoxyribonucleic Acid Hybridization Using Au-Gated AlInN/GaN High Electron Mobility Transistor-Based Sensors

Abstract

Gallium nitride- (GaN) based high electron mobility transistors (HEMTs) provide a good platform for biological detection. In this work, both Au-gated AlInN/GaN HEMT and AlGaN/GaN HEMT biosensors are fabricated for the detection of deoxyribonucleic acid (DNA) hybridization. The Au-gated AlInN/GaN HEMT biosensor exhibits higher sensitivity in comparison with the AlGaN/GaN HEMT biosensor. For the former, the drain-source current ( V) shows a clear decrease of 69 μA upon the introduction of 1 μmolL (μM) complimentary DNA to the probe DNA at the sensor area, while for the latter it is only 38 μA. This current reduction is a notable indication of the hybridization. The high sensitivity can be attributed to the thinner barrier of the AlInN/GaN heterostructure, which makes the two-dimensional electron gas channel more susceptible to a slight change of the surface charge.

Status and Prospects of Heterojunction-Based HEMT for Next-Generation Biosensors

“…In his article, Butterworth concluded that the shorter SAM molecules increase the sensitivity of the sensor device. Despite its promising potential for application in high sensitivity sensors, short SAM molecules are less stable compared to long SAM molecules due to a lack of van der Waals attraction force [ 3 ]. Thereby, it is reasonable to think that the shorter SAM may show an ageing effect when the sensor is washed or regenerated.…”

“…Protein-based biomarkers are extremely useful for diagnostics, particularly in cardiovascular disorders (CVDs) [ 2 ]. An effective biosensor would be able to immediately detect, identify, and quantify target biomolecules in any underlying physiological solution [ 3 ]. A biosensor device typically includes the bioreceptor, which recognizes the specific analyte and generates a signal response.…”

High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor

“…According to these advantages, the excellent performances of devices of the AlInN/GaN heterostructure have been reported over the past few decades [14,15,16,17,18]. However, only a few works on ion sensors are based on the AlInN/GaN heterostructure [19,20,21,22]. T. Brazzini firstly investigated the performance of a GaN-caped AlInN/AlN/GaN field effect transistor as the pH-sensing application and demonstrated a drain current pH sensitivity from −1.37 μA/pH to −4.16 μA/pH, dependent on the device geometry.…”

“…T. Brazzini firstly investigated the performance of a GaN-caped AlInN/AlN/GaN field effect transistor as the pH-sensing application and demonstrated a drain current pH sensitivity from −1.37 μA/pH to −4.16 μA/pH, dependent on the device geometry. This displayed the potential of pH sensor application of AlInN in spite of no comparison experiments with the traditional AlGaN/GaN devices having been done and only three pH values of 4, 7 and 10 having been evaluated, and the GaN cap layer also may have a contribution to the sensitivity [19]. In other existing related investigations, AlInN/GaN HEMTs have been used to try to detect deoxyribonucleic acid (DNA) hybridization, demonstrating higher sensitivity in comparison with the AlGaN/GaN HEMT biosensor [19].…”

“…This displayed the potential of pH sensor application of AlInN in spite of no comparison experiments with the traditional AlGaN/GaN devices having been done and only three pH values of 4, 7 and 10 having been evaluated, and the GaN cap layer also may have a contribution to the sensitivity [19]. In other existing related investigations, AlInN/GaN HEMTs have been used to try to detect deoxyribonucleic acid (DNA) hybridization, demonstrating higher sensitivity in comparison with the AlGaN/GaN HEMT biosensor [19]. Alternately, the AlInN/GaN sensor similarly exhibits better sensitivity than that of the AlGaN/GaN sensor in phosphate detection.…”