High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor

Yan, Dong; Son, Dae‐Ho; Dai, Quan; Lee, Jun-Hyeok; Won, Chul-Ho; Kim, Jeong-Gil; Chen, Dunjun; Lee, Jung‐Hee; Lu, Hai; Zhang, Rong; Zheng, Yue

doi:10.3390/s18051314

Cited by 14 publications

(9 citation statements)

References 26 publications

(37 reference statements)

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“…To further improve the sensitivity of the emerging AlGaN/GaN HEMT-based pH sensors, some other device structures have also been developed successively. Brazzini et al [49] and Dong et al [50] proposed an AlInN/GaN HEMT structure with a thinner AlInN barrier layer that can make the 2DEG at the AlInN/GaN interface more sensitive to the change in the surface charge caused by the environment. The experimental results from Dong et al also [50] demonstrated that the AlInN/GaN device exhibited a larger current variation in terms of the pH value measurement compared with the AlGaN/GaN devices, as shown in figures 5(a)-(b).…”

Section: Ph Sensorsmentioning

confidence: 99%

Applications of AlGaN/GaN high electron mobility transistor-based sensors in water quality monitoring

Guo¹,

Jia²,

Yan³

et al. 2020

Semicond. Sci. Technol.

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AlGaN/GaN high electron mobility transistors (HEMTs) have demonstrated their extraordinary potential in developing solid-state microsensors for detecting gases, metal ions, anions, biomolecules, and other substances due to their excellent chemical stability, high surface charge sensitivity, high temperature-tolerance performance, and low power consumption characteristics. In this paper, only three types of AlGaN/GaN HEMT-based sensors used for detecting the pH value, heavy metal ions, and harmful anions, which are suitable for water quality monitoring, will be discussed. First, we introduce the structural design, detection principle, and fabrication processes of AlGaN/GaN HEMT-based sensors. Then, surface functionalization methods for the gate region, sensing mechanisms, and the sensitivity and selectivity performances based on different gate region treatments are reviewed and analyzed. Finally, some challenging problems that hinder the practical application of the sensors are proposed.

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Section: Ph Sensorsmentioning

confidence: 99%

Applications of AlGaN/GaN high electron mobility transistor-based sensors in water quality monitoring

Guo¹,

Jia²,

Yan³

et al. 2020

Semicond. Sci. Technol.

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“…Sensors using HEMTs are actively being developed. However, most applications use HEMTs as single devices [ 3 , 4 , 5 ]. HEMTs also have a fatal disadvantage in that they are vulnerable to process voltage temperature (PVT) variations.…”

Section: Introductionmentioning

confidence: 99%

Readout Integrated Circuit for Small-Sized and Low-Power Gas Sensor Based on HEMT Device

Lee

Jin

Baek

et al. 2021

Sensors

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This paper presents a small-sized, low-power gas sensor system combining a high-electron-mobility transistor (HEMT) device and readout integrated circuit (ROIC). Using a semiconductor-based HEMT as a gas-sensing device, it is possible to secure high sensitivity, reduced complexity, low power, and small size of the ROIC sensor system. Unlike existing gas sensors comprising only HEMT elements, the proposed sensor system has both an ROIC and a digital controller and can control sensor operation through a simple calibration process with digital signal processing while maintaining constant performance despite variations. The ROIC mainly consists of a transimpedance amplifier (TIA), a negative-voltage generator, and an analog-to-digital converter (ADC) and is designed to match a minimum target detection unit of 1 ppm for hydrogen. The prototype ROIC for the HEMT presented herein was implemented in a 0.18 µm complementary metal–oxide–semiconductor (CMOS) process. The total measured power consumption and detection unit of the proposed ROIC for hydrogen gas were 3.1 mW and 2.6 ppm, respectively.

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“…The progress of the power electronics industry has been contingent on the level of progress in the semiconductor power device industry, otherwise known as the power electronic device industry and this particularly on the advancements in power electronic switches [ 8 ]. The power electronic switch industry has grown and improved drastically over the years and is now in a transitional phase from the more common silicon semiconductor technologies to a totally new phase of wide band gap (WBG) technologies [ 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 ]. This new phase is characterized by an improvement in the various characteristics and manufacturing techniques already in place for power electronic switches [ 17 , 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 ].…”

Section: Introductionmentioning

confidence: 99%

Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future

Jiya

Gouws

2020

Micromachines

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As the need for green and effective utilization of energy continues to grow, the advancements in the energy and power electronics industry are constantly driven by this need, as both industries are intertwined for obvious reasons. The developments in the power electronics industry has over the years hinged on the progress of the semiconductor device industry. The semiconductor device industry could be said to be on the edge of a turn into a new era, a paradigm shift from the conventional silicon devices to the wide band gap semiconductor technologies. While a lot of work is being done in research and manufacturing sectors, it is important to look back at the past, evaluate the current progress and look at the prospects of the future of this industry. This paper is unique at this time because it seeks to give a good summary of the past, the state-of-the-art, and highlight the opportunities for future improvements. A more or less ‘forgotten’ power electronic switch, the four-quadrant switch, is highlighted as an opportunity waiting to be exploited as this switch presents a potential for achieving an ideal switch. Figures of merit for comparing semiconductor materials and devices are also presented in this review.

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High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor

Cited by 14 publications

References 26 publications

Applications of AlGaN/GaN high electron mobility transistor-based sensors in water quality monitoring

Applications of AlGaN/GaN high electron mobility transistor-based sensors in water quality monitoring

Readout Integrated Circuit for Small-Sized and Low-Power Gas Sensor Based on HEMT Device

Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future

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