Highly Sensitive and Ambient Air-Processed Hybrid Perovskite TFT Temperature Sensor

Haque, Farjana; Lim, Seoungbum; Lee, Seungjun; Park, Yongsup; Mativenga, Mallory

doi:10.1109/led.2020.2995086

Cited by 9 publications

(8 citation statements)

References 30 publications

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“…Y, Cr, IZO, ITO and graphene represent promising alternatives as robust contact materials, where such reactions do not occur. [93,[141][142][143]149,152,178,180] A solution to the Au interface reactivity problem is treatment with a SAM or insertion of an interlayer. [65] In addition to acting as a physical barrier to electrochemical degradation, these chemical functionalizations allow for the tuning of the injection barrier at the semiconductor/contact interface and, in some cases, assist with improving the perovskite film microstructure by modifying the surface energy.…”

Section: Source-drain Electrodes Used In Perovskite Fetsmentioning

confidence: 99%

“…For example, while the electron mobility of MAPbI 3 FETs was highest when the ratio of MAI:PbI 2 in the precursor was 6:5 (μ e = 0.05 cm 2 V –1 s –1 ), the current‐voltage hysteresis was substantially reduced by changing the ratio to 4:5, albeit with the electron mobility dropping to μ e = 0.02 cm 2 V –1 s –1 . [ 142 ] In a different report, however, the same group found that the precursor with a component ratio MAI:PbI 2 of 1:1 exhibits the highest electron mobility of μ e = 0.1 cm 2 V –1 s –1 , [ 143 ] underlining the importance of fine tuning the stoichiometry in achieving consistent device performance. By using a solvent combination of diethylsulfide and N , N ‐dimethylformamide (DMF) and increasing the MA concentration in the precursor solution, Jana et al.…”

Section: Current Status In Perovskite Transistors and Phototransistorsmentioning

confidence: 99%

“…Y, Cr, IZO, ITO and graphene represent promising alternatives as robust contact materials, where such reactions do not occur. [ 93,141–143,149,152,178,180 ]…”

Section: Current Status In Perovskite Transistors and Phototransistorsmentioning

confidence: 99%

See 2 more Smart Citations

Switched‐On: Progress, Challenges, and Opportunities in Metal Halide Perovskite Transistors

Paulus

Tyznik

Jurchescu

et al. 2021

Adv Funct Materials

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Field-effect transistors (FETs) are key elements in modern electronics and hence are attracting immense scientific and commercial attention. The recent emergence of metal halide perovskite materials and their tremendous success in the field of photovoltaics have triggered the exploration of their application in other (opto)electronic devices, including FETs and phototransistors. In this review, the current status of the field is discussed, the challenges are highlighted, and an outlook for the future perspectives of perovskite FETs is provided. First, attention is drawn to the device physics and the fundamental processes that influence these devices, including the role of ion migration and defects, effects of temperature, light, and measurement conditions. Next, the performance of perovskite transistors and phototransistors reported to date are surveyed and critically assessed. Finally, the key challenges that impede perovskite transistor progress are outlined and discussed. The insights gained from the study of other perovskite optoelectronic devices may be adopted to address these challenges and advance this exciting field of research closer to the industrial application are examined.

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Section: Source-drain Electrodes Used In Perovskite Fetsmentioning

confidence: 99%

Section: Current Status In Perovskite Transistors and Phototransistorsmentioning

confidence: 99%

See 1 more Smart Citation

Switched‐On: Progress, Challenges, and Opportunities in Metal Halide Perovskite Transistors

Paulus

Tyznik

Jurchescu

et al. 2021

Adv Funct Materials

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“…An organic-inorganic hybrid perovskite-based ambipolar FET temperature sensor was reported by Haque et al recently [67]. The active MAPbI 3 layer is fabricated using a stoichiometric mixture of powdered methylammonium iodide (MAI) and lead iodide (PbI 2 ).…”

Section: Ofet Semiconductor Channel As Sensing Elementmentioning

confidence: 99%

Temperature Sensors Based on Organic Field-Effect Transistors

et al. 2021

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The rapid growth of wearable electronics, Internet of Things, smart packaging, and advanced healthcare technologies demand a large number of flexible, thin, lightweight, and ultralow-cost sensors. The accurate and precise determination of temperature in a narrow range (~0–50 °C) around ambient temperatures and near-body temperatures is critical for most of these applications. Temperature sensors based on organic field-effect transistors (OFETs) have the advantages of low manufacturing cost, excellent mechanical flexibility, easy integration with other devices, low cross-sensitivity, and multi-stimuli detectability and, therefore, are very suitable for the above applications. This article provides a timely overview of research progress in the development of OFET-based temperature sensors. First, the working mechanism of OFETs, the fundamental theories of charge transport in organic semiconductors, and common types of OFET temperature sensors based on the sensing element are briefly introduced. Next, notable advances in the development of OFET temperature sensors using small-molecule and polymer semiconductors are discussed separately. Finally, the progress of OFET temperature sensors is summarized, and the challenges associated with OFET temperature sensors and the perspectives of research directions in this field are presented.

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“…Perovskites often exhibit various remarkable properties, including giant magnetoresistance and superconductivity, depending on the atoms or molecules constituting the structure. [5,6] These intriguing properties enable the potential application of perovskites in light-emitting diodes (LEDs), [2,4,7] sensors, [3,8] memory devices, [9] thin-film transistors (TFTs), [10][11][12][13][14] spintronics, [15] and solar cells. [1,7] Despite swift advancement in various applications, hybrid organic-inorganic perovskite-based devices are known for their many instabilities such as measurement speed, time, or history-dependent hysteresis in current-voltage (I-V ) characteristics.…”

Section: Introductionmentioning

confidence: 99%

Effects of Structural Phase Transitions on Hysteresis in Air‐Processed Organic–Inorganic Halide Perovskite Thin‐Film Transistors

Haque

Mativenga

2021

Physica Rapid Research Ltrs

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A comprehensive study on the effects of structural phase transitions (from −190 to 80 °C) on hysteresis in air‐processed methylammonium lead iodide (MAPbI3) thin‐film transistors (TFTs) is presented. The polarization effect of ordered MA+ ions and the migration of iodine ions are found to be the main causes of hysteresis in the orthorhombic (<−100 °C) and tetragonal (from −100 to 50 °C) phases, respectively. Large carrier concentration and lattice vibrations suppress the effects of ion migration in the cubic phase (>50 °C), resulting in negligible hysteresis. Hole current is found to vary marginally with temperature throughout the three phases. Electron current, however, is slightly smaller than hole current in the orthorhombic phase but rapidly increases with temperature until it exceeds hole current by three orders of magnitude in the tetragonal phase, and then decreases by an order of magnitude in the cubic phase due to scattering. Dedicating hole and electron transport, respectively to cold and hot conditions, may thus increase the operating temperature range for MAPbI3 devices. These findings provide fundamental insight into the origin of hysteresis in halide perovskite devices and guidelines for broadening their operating temperature window.

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Highly Sensitive and Ambient Air-Processed Hybrid Perovskite TFT Temperature Sensor

Cited by 9 publications

References 30 publications

Switched‐On: Progress, Challenges, and Opportunities in Metal Halide Perovskite Transistors

Switched‐On: Progress, Challenges, and Opportunities in Metal Halide Perovskite Transistors

Temperature Sensors Based on Organic Field-Effect Transistors

Effects of Structural Phase Transitions on Hysteresis in Air‐Processed Organic–Inorganic Halide Perovskite Thin‐Film Transistors

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