Highly Sensitive Acetone Sensor Based on Pd/AlGaN/GaN Resistive Device Grown by Plasma-Assisted Molecular Beam Epitaxy

Characterization of an Acetone Detector Based on a Suspended WO3-Gate AlGaN/GaN HEMT Integrated With Microheater

“…It is obvious that the response increased at a higher temperature. In this work, for 1000-ppm acetone concentration, the measured I DS and sensitivity showed an almost twofold increase, from 0.18 mA (12%) at V H = 3.5 V to 0.31 mA (25.7%) at V H = 4 V, while at 100 ppm I DS = 0.16 mA, which is larger than the reported value of I ∼ 12 μA at 100-ppm acetone for a Schottky-type sensor [35], [38]. Figs.…”

“…By functionalizing the gate area of an HEMT sensor for sensing materials, the AlGaN/GaN sensors have been demonstrated for H 2 [21], CO [22]- [24], NO [25], [26], NO 2 [26]- [28], NH 3 [25], [29], [30], CH 4 [31], H 2 S [32], [33], and C 2 H 2 [34]. So far, very few results of acetone detection with AlGaN/GaN devices have been reported [35].…”

Comprehensive Analytical Modeling of AlGaN/GaN based Heterostructure Gas Sensor

“…Bhaskar Roy 1,3 Сьогодні людство стикається з серйозною проблемою, пов'язаною із забрудненням навколишнього середовища через викиди промислових газів і промислових відходів, які можуть становити небезпеку для навколишнього середовища і викликати серйозні проблеми зі здоров'ям людей. Так датчики летких органічних сполук (ЛОС) привернули велику увагу дослідників протягом останнього десятиліття.…”

“…By virtue of superb material characteristics such as large and direct bandgap, high temperature, actinic stability, saturation velocity, break-down voltage and high drift velocity etc., the group III-N elements have drawn attraction among the scientists worldwide during last deade [1][2][3][4][5], facilitating them to be extensively significant in electronics, optoelectronics and sensor application [6][7][8][9]. The AlGaN/ GaN material platform is widely involved in sensor implementation amongst the other III-N element owing to inadequacy of Fermi-level pinning [10].…”

“…In order to effectively detect different gases such as acetone, a MSM Schottky diode type structural system has been used [26]. In some studies, a separate sort of metal-semiconductor-metal (MSM) with successive Schottky diode system is been implemented [2,3]. In most of the recent work deal with only experimental approach rather than analytical approach.…”