Highly sensitive 4H-SiC pressure sensor at cryogenic and elevated temperatures

Nguyen, Tuan‐Khoa; Phan, Hoang‐Phuong; Dinh, Toan; Dowling, Karen M.; Foisal, Abu Riduan Md; Senesky, Debbie G.; Nguyen, Nam‐Trung; Dao, Dzung Viet

doi:10.1016/j.matdes.2018.07.014

Cited by 63 publications

(21 citation statements)

References 28 publications

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“…With the rapid development of the modern semiconductor industry, silicon-based semiconductors are quickly approaching their limit according to Moore's Law [1], and an important direction for the semiconductor industry will be in looking for a substitute for silicon. In this process, silicon carbide (SiC) became of interest to researchers in recent decades [2][3][4][5][6][7]. SiC is an ideal material for manufacturing semiconductor devices on account of its excellent physical and chemical properties, such as its wide bandgap, high critical breakdown field strength, high electron saturation rate, high thermal conductivity and stability, and chemical inertness [8,9].…”

Section: Introductionmentioning

confidence: 99%

Mechanical Behavior Investigation of 4H-SiC Single Crystal at the Micro–Nano Scale

Chai

et al. 2020

Micromachines

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In this paper, theoretical models of the critical indentation depth and critical force on brittle materials using cleavage strength and contact theory are proposed. A Berkovich indenter is adopted for nanoindentation tests on a 4H-SiC single crystal sample to evaluate its mechanical behaviors. The stages of brittle material deformation (elastic, plastic, and brittle) can be characterized by the load versus indentation depth curves through the nanoindentation test. The curve of the elastic deformation stage follows the Hertz contact theory, and plastic deformation occurs at an indentation depth of up to 10 nm. The mechanism of 4H-SiC single crystal cracking is discussed, and the critical indentation depth and critical force for the plastic-brittle transition are obtained through the occurrence of the pop-in point. This shows that the theoretical results have good coherence with the test results. Both the values of the elastic modulus and hardness decrease as the crack length increases. In order to obtain more accurate mechanical property values in the nanoindentation test for brittle materials such as SiC, GaN, and sapphire, an appropriate load that avoids surface cracks should be adopted.

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Section: Introductionmentioning

confidence: 99%

Mechanical Behavior Investigation of 4H-SiC Single Crystal at the Micro–Nano Scale

Chai

et al. 2020

Micromachines

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“…For instance, SiC wet-etching processes typically requires extreme conditions and aggressive chemicals. [9] Moreover, in terms of patterning bulk SiC wafers, dry etching of SiC using plasmabased processes results in a very low etching rate, hindering the implementation of SiC micro/nanoelectronic and sensing devices on a large scale. To mitigate this obstacle, epitaxially grown SiC on silicon substrates has been introduced and proven to be a promising approach because it only requires patterning of thin SiC layers and therefore is more favorable than approaches using bulk SiC wafers.…”

Section: Introductionmentioning

confidence: 99%

“…Unlike silicon counterparts, SiC micromachining processes are undoubtedly limited and expensive due to the chemical inertness of SiC. For instance, SiC wet‐etching processes typically requires extreme conditions and aggressive chemicals . Moreover, in terms of patterning bulk SiC wafers, dry etching of SiC using plasma‐based processes results in a very low etching rate, hindering the implementation of SiC micro/nanoelectronic and sensing devices on a large scale.…”

Section: Introductionmentioning

confidence: 99%

Lithography and Etching‐Free Microfabrication of Silicon Carbide on Insulator Using Direct UV Laser Ablation

et al. 2020

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Silicon carbide (SiC)-based microsystems are promising alternatives for siliconbased counterparts in a wide range of applications aiming at conditions of high temperature, high corrosion, and extreme vibration/shock. However, its high resistance to chemical substances makes the fabrication of SiC particularly challenging and less cost-effective. To date, most SiC micromachining processes require time-consuming and high-cost SiC dry-etching steps followed by metal wet etching, which slows down the prototyping and characterization process of SiC devices. This work presents a lithography and etching-free microfabrication for 3C-SiC on insulator-based microelectromechanical systems (MEMS) devices. In particular, a direct laser ablation technique to replace the conventional lithography and etching processes to form functional SiC devices from 3C-SiC-onglass wafers is used. Utilizing a single line-cutting mode, both metal contact shapes and SiC microstructures can be patterned simultaneously with a remarkably fast speed of over 20 cm s À1. As a proof of concept, several SiC microdevices, including temperature sensors, strain sensors, and microheaters, are demonstrated, showing the potential of the proposed technique for rapid and reliable prototyping of SiC-based MEMS.

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“…They may be made by bulk micromachining [2,3] or surface micromachining [4,5]. Also, wide-band gap semiconductors based piezoresistive pressure sensors have been proposed for hostile environments [6,7]. However, double-side processing from bulk micromachining is not CMOS process friendly [2,3].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of a Piezoresistive Barometric Pressure Sensor by a Silicon-on-Nothing Technology

Zhang

Guoping

et al. 2019

Journal of Sensors

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This paper presents a piezoresistive barometric pressure sensor fabricated by using a Silicon-on-Nothing (SON) technology. Array of silicon trenches were annealed in hydrogen environment to form continuing crystalline silicon membrane over a vacuum cavity. Epitaxial growth on the silicon membrane is then completed for the desired thickness. All processes are CMOS compatible and performed on the front side of the silicon wafer. The piezoresistive barometric pressure sensor has been demonstrated with pressure hysteresis as low as 0.007%.

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Highly sensitive 4H-SiC pressure sensor at cryogenic and elevated temperatures

Cited by 63 publications

References 28 publications

Mechanical Behavior Investigation of 4H-SiC Single Crystal at the Micro–Nano Scale

Mechanical Behavior Investigation of 4H-SiC Single Crystal at the Micro–Nano Scale

Lithography and Etching‐Free Microfabrication of Silicon Carbide on Insulator Using Direct UV Laser Ablation

Fabrication of a Piezoresistive Barometric Pressure Sensor by a Silicon-on-Nothing Technology

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