Highly Rugged 30 GHz GaN Low-Noise Amplifiers

Rudolph, Matthias; Chaturvedi, Nidhi; Hirche, K.; Würfl, Joachim; Heinrich, W.; Tränkle, G.

doi:10.1109/lmwc.2009.2015514

Cited by 33 publications

(12 citation statements)

References 10 publications

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“…GaN technologies have demonstrated excellent ability for high power applications, high power added efficiency (up to more than 60%), and higher thermal management than its narrow bandgap competitors. From the earlier developments at the end of the 1990-ties, USA and Japan have engaged strong projects on GaN devices development for high power applications (more than 10 W/mm [2], up to 30W/mm [3]), while few years later Europe has followed on a different way considering both power and low noise performances for robust integrated transceivers applications [4] [5]. Fig.…”

Section: Introductionmentioning

confidence: 99%

Diagnostic tools for accurate reliability investigations of GaN devices

Tartarin

2011

2011 21st International Conference on Noise and Fluctuations

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Intensive development of GaN-based HEMT devices has been largely pushed by their intrinsic capabilities for operation at high temperature under high voltage conditions, making the difference with the competitive technologies. However, a poor electrical reliability under high-electric-field operation is still hampering large-scale penetration of these technologies into the RF power market. From the early 2000, an increased number of works have addressed reliability issues. The first ones have been conducted on the basis of roadmaps issued from reliability investigations previously carried out on III-V and silicon based devices. These investigations have enlightened that several parameters such as surface passivation, processing techniques alternatives and piezoelectric effects severely impact device reliability. In order to get a deeper understanding of the correlation between physical and electrical events, we simultaneously report low frequency noise (LFN) measurements data (including separation of the different noise sources involved), and electrical measurements data (lag effects on drain and gate terminals, I-DLTS measurements, ...) conducted on the same devices. The later investigations are appropriate in order to identify defects that are able to produce noise. Noise measurements versus temperature on virgin and stressed devices are reported for different GaN processes developed by a French industrial foundry. Lorentzian noise shapes are identified and activation energies are extracted from Arrhenius plots. Additionally, I-DLTS measurements are performed. Electric lag measurements on the gate and drain terminals are finally used in order to relate stress impact to the electrical integrity of the devices. The identification of failure mechanisms needs accurate statements, and the effectiveness of such a melting of different kind of experiments is demonstrated.

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Section: Introductionmentioning

confidence: 99%

Diagnostic tools for accurate reliability investigations of GaN devices

Tartarin

2011

2011 21st International Conference on Noise and Fluctuations

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“…As can be seen in the figure the proposed front-end modules based on GaN MMICs do not include a separate limiter, which improves the overall noise figure. The survivability capability of GaN LNAs has already been proven by others [1]- [7]. State-of-the-art performance for the input power capability is 37 dBm for CW mode and 41 dBm in pulse mode.…”

Section: Robust Receiversmentioning

confidence: 84%

Robust AlGaN/GaN Low Noise Amplifier MMICs for C-, Ku- and Ka-Band Space Applications

Suijker

Rodenburg

Hoogland

et al. 2009

2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium

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The high power capabilities in combination with the low noise performance of Gallium Nitride (GaN) makes this technology an excellent choice for robust receivers. This paper presents the design and measured results of three different LNAs, which operate in C-, Ku-, and Ka-band. The designs are realized in 0.25 μm and 0.15 μm AlGaN/GaN microstrip technology. The measured noise figure is 1.2, 1.9 and 4.0 dB for the C-, Ku-, and Ka-frequency band respectively. The robustness of the LNAs have been tested by applying CW source power levels of 42 dBm, 42 dBm and 28 dBm for the C-band, Ku-band and Ka-band LNA respectively. No degradation in performance has been observed. I. INTRODUCTION Due to the current trends in the global security scenario the interest in secure and robust satellite communication systems is increasing. A space-born receiver is one of the most important, but also one of the most sensitive components in the satellite communication chain. These receivers must also be functional during severe jamming and no degradation is allowed due to high input powers from hostile electromagnetic attacks. Currently enabling technologies like GaN and SiC are being developed for both military as well as governmental and commercial applications. GaN is expected to improve the performance regarding robustness together with microwave capabilities comparable to currently used technologies like GaAs, InP and Si. Due to the combination of high power and low noise operation GaN is very suitable for the realization of secure robust RF front-end (RFFE) modules. In addition, the overdrive capability and survivability levels are exceptionally high. The development of both GaN HEMTs as well as MMIC processes makes it possible to realize GaN low noise receivers at millimeter wave frequencies. Such receivers are very attractive for secure communication systems due to the changing trade-off between performance and cost. Therefore GaN based receivers offer important potential for next generation satellite communication systems. This work aims at technology demonstrations at C-, Ku-and Ka-band by designing, building and testing GaN low noise

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“…The noise figure for the 1-stage LNA is reported in Fig. 3, with other works based on GaN technologies and compiled from literature [2]- [12]. Few LNAs have been designed in the Ka-band, and this work presents state of the art figure of merit with the NF measured at 3.3 dB (MIC 1-stage LNA), despite using a relatively immature technology.…”

Section: Robust Ka-band Lna Designsmentioning

confidence: 91%

“…State-of-the art in GaN LNA technologies. References are largely inspired from[2]. This work reports InAlN/GaN based LNA…”

mentioning

confidence: 99%

Self-biasing effects induced by RF step-stress in Ka-band LNAs based on InAlN/GaN HEMT technology

Tartarin

Nsele

Piotrowicz

et al. 2016

2016 46th European Microwave Conference (EuMC)

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Nitride technologies are proposing a large variety of active devices to address high-power modules, but also robust low-noise receivers at high frequencies. High Electron Mobility Transistors (HEMT) are essentially developed on AlGaN/GaN heterostructure, but InAlN/GaN alternative seems very promising due to lattice matched layers (using 17% of In content) at the interface between layers where the channel (2DEG) occurs, and to a better mobility in the 2DEG. This paper presents a study on Ka-band Low Noise Amplifiers featuring a Noise Figure of 3.3dB between 29-30.5 GHz for the single stage version under study. RF step-stresses and CW stresses have been applied on four different LNAs, evidencing fluctuation of charges in the active device. Self-biasing of the HEMT is emphasized and assessed through the evaluation of the 2 nd order harmonic at 59 GHz. Initial noise and dynamic performances can be fully recovered after a long period with no RF signal, or by applying a positive voltage on the gate to remove charges under the gated zone of the transistor. These results on the stability of the noise figure of LNAs prove that jamming signals can be harmless on GaN based receivers, even if some more improvements have to be achieved on these not yet mature technologies.

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Highly Rugged 30 GHz GaN Low-Noise Amplifiers

Cited by 33 publications

References 10 publications

Diagnostic tools for accurate reliability investigations of GaN devices

Diagnostic tools for accurate reliability investigations of GaN devices

Robust AlGaN/GaN Low Noise Amplifier MMICs for C-, Ku- and Ka-Band Space Applications

Self-biasing effects induced by RF step-stress in Ka-band LNAs based on InAlN/GaN HEMT technology

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