Robust AlGaN/GaN Low Noise Amplifier MMICs for C-, Ku- and Ka-Band Space Applications

Suijker, E.M.; Rodenburg, M.; Hoogland, J.A.; Heijningen, M. van; Seelmann‐Eggebert, M.; Quay, R.; Brückner, Peter; Vliet, F.E. van

doi:10.1109/csics.2009.5315640

Cited by 69 publications

(18 citation statements)

References 3 publications

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“…They have been optimized for low noise and robust operations. All details are given in [6]. The first results exhibit noise figures close to 1.2, 1.9 and 4 dB, respectively for C-, Ku- and the Ka-band.…”

Section: Gan Applicationsmentioning

confidence: 93%

GaN for space application: almost ready for flight

Muraro¹,

Guillaume²,

Nhut

et al. 2010

Int. j. microw. wirel. technol.

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On the last years, gallium nitride (GaN) technology has made a remarked breakthrough in the world of microwave electronics. Power transistors are now available. How this GaN technology would impact space-borne units is now a priority concern. Although the power capability of GaN technology is the first obvious profit, GaN could also be used for other applications like low noise amplifiers, mixers, and probably more. The high sustainable temperature of GaN transistors is most striking advantage for in-flight use. This is connected to packaging design which is also experiencing a lot of activities and quick progresses. Of course, space application is dependent upon the full demonstration of reliability and this constitutes another field of investigation. Finally, after 8 years of GaN studies, experimental results are presented: they open wide the road a revolution inside space-borne electronics: the rise of GaN.

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Section: Gan Applicationsmentioning

confidence: 93%

GaN for space application: almost ready for flight

Muraro¹,

Guillaume²,

Nhut

et al. 2010

Int. j. microw. wirel. technol.

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“…Next to power amplifier robust low-noise amplifiers have been realized as MMICs with the particular target to achieve very high survivability at reasonable noise figure level [13]. Typical targets for the survivability are in the 5-10 W range of input power to a particular MMIC.…”

Section: I I R O B U S T L N a M M I Cmentioning

confidence: 99%

Design and realization of GaN RF-devices and circuits from 1 to 30 GHz

Kuhn

Musser

Raay

et al. 2010

Int. j. microw. wirel. technol.

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The design, realization, and characterization of highly efficient powerbars and monolithic microwave integrated circuit (MMIC) high-power amplifiers (HPAs) with AlGaN/GaN high electronic mobility transistors (HEMTs) are presented for the frequency range between 1 and 30 GHz. Packaged powerbars for the frequency range between 1 and 6 GHz have been developed based on a process called GaN50 with a gate length of 0.5 μm. Based on a GaN25 process with a gate length of 0.25 μm, high-power MMIC amplifiers are presented starting from 6 GHz up to advanced X-band amplifiers and robust LNAs in microstrip transmission line technology.

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“…Among the several possible substrates [1], SiC is currently the most widely adopted trade-off between high thermal conductivity and low fabrication cost. Although historically driven towards high-power designs, the research on GaN HEMT technology has made significant progress as far as low-noise amplifiers are concerned [2][3][4]. At present, several GaN-based processes exist which not only outperform their GaAs counterparts in terms of output power but are even competitive in terms of noise factor, while inherently exhibiting superior ruggedness [5,6].…”

Section: Introductionmentioning

confidence: 99%

Linear Characterization and Modeling of GaN-on-Si HEMT Technologies with 100 nm and 60 nm Gate Lengths

et al. 2021

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Motivated by the growing interest towards low-cost, restriction-free MMIC processes suitable for multi-function, possibly space-qualified applications, this contribution reports the extraction of reliable linear models for two advanced GaN-on-Si HEMT technologies, namely OMMIC’s D01GH (100 nm gate length) and D006GH (60 nm gate length). This objective is pursued by means of both classical and more novel approaches. In particular, the latter include a nondestructive method for determining the extrinsic resistances and an optimizaion-based approach to extracting the remaining parasitic elements: these support standard DC and RF measurements in order to obtain a scalable, bias-dependent equivalent-circuit model capturing the small-signal behavior of the two processes. As to the noise model, this is extracted by applying the well known noise-temperature approach to noise figure measurements performed in two different frequency ranges: a lower band, where a standard Y-factor test bench is used, and an upper band, where a custom cold-source test bench is set up and described in great detail. At 5 V drain-source voltage, minimum noise figures as low as 1.5 dB and 1.1 dB at 40 GHz have been extracted for the considered 100 nm and 60 nm HEMTs, respectively: this testifies the maturity of both processes and the effectiveness of the gate length reduction. The characterization and modeling campaign, here presented for the first time, has been repeatedly validated by published designs, a couple of which are reviewed for the Reader’s convenience.

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Robust AlGaN/GaN Low Noise Amplifier MMICs for C-, Ku- and Ka-Band Space Applications

Cited by 69 publications

References 3 publications

GaN for space application: almost ready for flight

GaN for space application: almost ready for flight

Design and realization of GaN RF-devices and circuits from 1 to 30 GHz

Linear Characterization and Modeling of GaN-on-Si HEMT Technologies with 100 nm and 60 nm Gate Lengths

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