Highly Robust Flexible Poly-Si Thin Film Transistor Under Mechanical Strain With Split Active Layer for Foldable Active Matrix Organic Light Emitting Diode Display

Urmi, Sadia Sayed; Billah, Mohammad Masum; Priyadarshi, Sunaina; Bae, Jinbaek; Jung, Byunglib; Lee, Suhui; Kim, Keunwoo; Shin, Jaeseung; Choi, Sangun; Lim, Jun Hyung; Kang, Taewook; Lee, Changhee; Jang, Jin

doi:10.1109/led.2022.3225863

Cited by 10 publications

(2 citation statements)

References 13 publications

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“…Wearable and implantable electronics require reliable encapsulation layers to prevent ions and gas in the surrounding environment from deteriorating their electronic properties [ 1 , 2 , 3 ]. Recently, the lifetimes of flexible transistors based on ultrathin channels, such as silicon nanomembrane (Si NM) and polysilicon, have been prolonged by applying ultrathin flexible encapsulation (UFE) layers of less than one micrometer thick [ 4 , 5 , 6 ]. Compared with traditional encapsulation materials, such as titanium and bulk ceramics, emerging UFE materials have more advantages, namely scalable thickness and mechanical properties that enable seamless contact between devices and curved, dynamic surfaces [ 7 , 8 ].…”

Section: Introductionmentioning

confidence: 99%

Ultrathin Flexible Encapsulation Materials Based on Al2O3/Alucone Nanolaminates for Improved Electrical Stability of Silicon Nanomembrane-Based MOS Capacitors

Wang,

Lu,

Zhang

et al. 2023

Micromachines

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Ultrathin flexible encapsulation (UFE) using multilayered films has prospects for practical applications, such as implantable and wearable electronics. However, existing investigations of the effect of mechanical bending strains on electrical properties after the encapsulation procedure provide insufficient information for improving the electrical stability of ultrathin silicon nanomembrane (Si NM)-based metal oxide semiconductor capacitors (MOSCAPs). Here, we used atomic layer deposition and molecular layer deposition to generate 3.5 dyads of alternating 11 nm Al2O3 and 3.5 nm aluminum alkoxide (alucone) nanolaminates on flexible Si NM-based MOSCAPs. Moreover, we bent the MOSCAPs inwardly to radii of 85 and 110.5 mm and outwardly to radii of 77.5 and 38.5 mm. Subsequently, we tested the unbent and bent MOSCAPs to determine the effect of strain on various electrical parameters, namely the maximum capacitance, minimum capacitance, gate leakage current density, hysteresis voltage, effective oxide charge, oxide trapped charge, interface trap density, and frequency dispersion. The comparison of encapsulated and unencapsulated MOSCAPs on these critical parameters at bending strains indicated that Al2O3/alucone nanolaminates stabilized the electrical and interfacial characteristics of the Si NM-based MOSCAPs. These results highlight that ultrathin Al2O3/alucone nanolaminates are promising encapsulation materials for prolonging the operational lifetimes of flexible Si NM-based metal oxide semiconductor field-effect transistors.

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Section: Introductionmentioning

confidence: 99%

Ultrathin Flexible Encapsulation Materials Based on Al2O3/Alucone Nanolaminates for Improved Electrical Stability of Silicon Nanomembrane-Based MOS Capacitors

Wang,

Lu,

Zhang

et al. 2023

Micromachines

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“…The LTPS-based TFT has such advantages as acceptable uniformity and good carrier mobility [10][11][12][13][14][15]. In addition, compared to other channel materials, LTPS TFT device have excellent reliability performance with relatively low fabrication cost, which makes it receive more attentions for novel applications [16][17][18][19][20][21]. Currently, the LTPS TFT device is used in smart phones, wearable and flexible devices [22][23][24][25][26].…”

mentioning

confidence: 99%

Investigating DC and AC degradation behaviors to P-type low temperature polycrystalline silicon thin film transistor with fin-like structure

Chen¹,

Zheng

Yeh

et al. 2023

J. Phys. D: Appl. Phys.

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Currently, thin film transistor (TFT) based on planar structure is widely used in the applications of display panels. However, when the device is scaling-down, new device structures or novel materials should be introduced. In this work, the low temperature polycrystalline silicon (LTPS) TFT with fin-like structure is investigated. On the basis of electrical measurements, the device features good switching characteristics with low operating voltages. However, the Id-Vg sweeping result exhibits off-state leakage, which is known as the gate-induced drain leakage (GIDL) current. The GIDL current is increased with the drain bias and the temperature increasing. To observe the GIDL current degradations, different gate biases with negative bias stress (NBS) and positive bias stress (PBS) are applied. The results show different degradation behaviors. In addition, bias stresses with DC and AC methods are also applied to verify the device reliability. Both threshold voltage (Vt) shift and sub-threshold swing (S.S.) are also extracted to verify the degradations of the device. Finally, the physical models are also proposed to illustrate the degradation behaviors of the LTPS device with a fin-like structure, which can be beneficial to future related development of LTPS-based devices.

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Analysis of Distinct Degradation Behavior in LTPS TFTs Under Hot Carrier Condition with Varying Gate Voltage

Tu,

Chang,

Tsai

et al. 2024

2024 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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Highly Robust Flexible Poly-Si Thin Film Transistor Under Mechanical Strain With Split Active Layer for Foldable Active Matrix Organic Light Emitting Diode Display

Cited by 10 publications

References 13 publications

Ultrathin Flexible Encapsulation Materials Based on Al2O3/Alucone Nanolaminates for Improved Electrical Stability of Silicon Nanomembrane-Based MOS Capacitors

Ultrathin Flexible Encapsulation Materials Based on Al2O3/Alucone Nanolaminates for Improved Electrical Stability of Silicon Nanomembrane-Based MOS Capacitors

Investigating DC and AC degradation behaviors to P-type low temperature polycrystalline silicon thin film transistor with fin-like structure

Analysis of Distinct Degradation Behavior in LTPS TFTs Under Hot Carrier Condition with Varying Gate Voltage

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