Highly Responsive Flexible Photodetectors Based on MOVPE Grown Uniform Few-Layer MoS₂

Abstract

transition metal dichalcogenides (TMDCs) are seen as promising candidates for flexible electronic and optoelectronic devices due to their high tensile strength and favorable optical properties. Molybdenum disulfide (MoS 2 ) is a benchmark material for TMDCs, which has already been studied extensively. Here, we report on highly responsive flexible few-layer MoS 2 photodetectors based on MoS 2 synthesized uniformly for full coverage of 2 in. sapphire wafers using metalorganic vapor-phase epitaxy (MOVPE). Device performance is studied by electro-optical characterization. Electrostatic gating allows tuning both the responsivity between 150 and 920 A/W and the specific detectivity between almost 10 12 and 10 10 Jones. The measured spectrally resolved responsivities of the detectors suggest applications in the blue-light range, with opportunities for fine-tuning the most sensitive wavelength through gating, as shown through optical simulations. Finally, the flexible devices were bent to demonstrate their suitability for flexible electronics in fields of future Internet of Things and medical devices.

A review of molybdenum disulfide (MoS2) based photodetectors: from ultra-broadband, self-powered to flexible devices

“…FL-MoS 2 photodetectors also showed low dark current of 10 À10 A and photoresponse of 1.37 Â 10 5 . Schneider et al 370 used metalorganic vapor-phase epitaxy (MOVPE) method to develop FL MoS 2 based exible photodetectors. The photoresponsivity and specic detectivity of MoS 2 photodetectors can be changed between 150 A W À1 to 920 A W À1 and 10 12 Jones to 10 10 Jones by using electrostatic gating, respectively.…”

Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics

“…[ 92,94,122 ] The time response, τ res , of the MIG/QD‐based photodetectors was reported as 0.14 ms, which is similar to that of GFET‐based detectors, and about three orders of magnitude faster than high‐responsivity photodetectors relying on MoS 2 . [ 91,95,96 ]…”

Recent progress and challenges on two-dimensional material photodetectors from the perspective of advanced characterization technologies

“…Defects are commonly present in 2D materials, such as cracks, vacancies and crystal boundaries, which limits carrier mobility and transient response. TMDs are promising for functional photodetectors with abundant optical and electric properties [108][109][110][111][112][113]. But the presence of chalcogenide vacancies degenerates the devices.…”