Highly responsive broadband black phosphorus photodetectors

Abstract

Black phosphorus (BP) is a promising material for ultrafast and broadband photodetection because of its narrow bandgap from 0.35 eV (bulk) to 1.8 eV (monolayer) and high carrier mobility. Although photodetectors based on BP with different configurations have been reported, high photosensitivity was mostly observed in the visible range. A highly efficient BP-based infrared photodetector operated in the telecom spectral range, especially at 1550 nm, has not been demonstrated. Here, we report a Schottky-type photodetector based on thin BP flakes, operating in a broad spectral range from visible (635 nm) to infrared (1550 nm). A responsivity as high as 230 A•W −1 was achieved at 1550 nm with a source-drain bias of 1 V. The rise time is 4.8 ms, and the fall time is 6.8 ms. Under light illumination and external bias, the Schottky barrier between the BP and metal was reduced, leading to efficient photocurrent extraction. The unprecedented performance of the BP photodetector indicates intriguing potential for sensing, imaging, and optical communication.

Highly Porous ZnO/CNT Hybrid Microclusters for Superior UV Photodetection

“…This correlation suggests that higher light density corresponds to increased photocurrent output. Intriguingly, the devices exhibit a notable resilience to UV light absorption, irrespective of the applied bias ranging from 1.0 to 2.0 V (Figure b), a phenomenon commonly observed in other nanomaterials for UV and even visible light detections . The tolerance observed can be attributed to the limited material volume, leading to a saturation dilemma when all materials contribute to the generation of photocarrier pairs.…”

“…Intriguingly, the devices exhibit a notable resilience to UV light absorption, irrespective of the applied bias ranging from 1.0 to 2.0 V (Figure 5b), a phenomenon commonly observed in other nanomaterials for UV 62 and even visible light detections. 63 The tolerance observed can be attributed to the limited material volume, leading to a saturation dilemma when all materials contribute to the generation of photocarrier pairs. A power law of I photo ∝ P α is commonly used to explore the relationship of photocurrent (I photo ) and incident light density (P).…”

Growth of few-layer WTe2 by a salt-assisted double-tube chemical vapor deposition method with high infrared photosensitivity

“…To be compatible with optical communications, 33,34 we focus on the optoelectronic properties of few-layer WTe 2 devices in the near-infrared region. The time dependence of the WTe 2 device under a 1550 nm laser with varying light incident power is shown in Fig.…”

A high-performance UV photodetector with superior responsivity enabled by a synergistic photo/thermal enhancement of localized surface plasmon resonance

“…To date, nanostructured semiconductors have offered the possibility of achieving a high photoelectric performance, in particular by the creation of one-dimensional (1D) structures due to their remarkable properties such as highly-crystalline nature, 13 high surface area, 14 carrier confinement, 15 and low carrier transit time. 16 However, the underlying methods to create nanostructured UV photodetectors with superior performance for application in air remain a challenge.…”