Highly Reliable Threshold Switching Characteristics of Surface-Modulated Diffusive Memristors Immune to Atmospheric Changes

Abstract

Active cation-based diffusive memristors featuring essentially volatile threshold switching have been proposed for novel applications, such as a selector in a one-selector-and-one-resistor structure and signal generators in neuromorphic computing. However, the high variability of the switching behavior, which results from the high electroforming voltage, external environmental conditions, and transition to the non-volatile switching mode in a high-current range, is considered a major impediment to such applications. Herein, for the first time, we developed a highly reliable threshold switching device immune to atmospheric changes based on an ultraviolet-ozone (UVO)-treated diffusive memristor consisting of Ag and SiO 2 nanorods (NRs). UVO treatment forms a stable water reservoir on the surface of SiO 2 NRs, facilitating the redox reaction and ion migration of Ag. Consequently, diffusive memristors possess reliable switching characteristics, including electroforming-free, repeatable, and consistent switching with resistance to changes in ambient conditions and compliance levels during operation. We demonstrated that our approach is suitable for various metal oxides and can be used in numerous applications.

Tea helps neuromorphic computing: flexible memristors from tea polyphenols

“…3d-2). 41,42 As the voltage reduces to zero after the set process, the CF disconnects spontaneously due to the drift and diffusion of Ag atoms, causing an automatic transition from the LRS to the HRS without the reset process (Fig. 3d-3).…”

“…3d-2). 41,42 As the voltage 3) The device promptly reverts to its initial high-resistance state when the applied voltage approaches zero. The application of a negative voltage also induces the formation of a metastable CF, which leads to the evident observation of bidirectional volatile switching.…”

Tunable Neuromorphic Switching Dynamics via Porosity Control in Mesoporous Silica Diffusive Memristors

“…This implies that a larger amount of water molecules is absorbed by SiO 2 films with larger pores. This is unsurprising as more pore wall surface area is available in larger pores for the adsorption of moisture from the ambient environment. , Such hydrogen-bonded networks can then play a crucial role in anodic oxidation as well as ion migration processes, significantly affecting the switching dynamics of our memristor.…”

Artificial sensory system based on memristive devices

“…Reproduced with permission. [ 180 ] Copyright 2023, American Chemical Society. (B) Cross‐sectional transmission electron microscopic image of Ag‐nanodot (ND)–introduced device (left).…”