Highly Reliable Silicon Nitride Films Made by Jet Vapor Deposition

Wang, X. W.; Ma, T.P.; Cui, G.J.; Tamagawa, T.; Golz, John; Karecki, Simon; Halpern, B.L.; Schmitt, J.J.

doi:10.7567/ssdm.1994.c-9-2

Cited by 3 publications

(6 citation statements)

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“…We have also assumed as in [10] that a single transmission probability applies to all transitions in calculating the tunneling current. This approximation reduces (5) to (7) The goal in using the above numerical model is to provide an indication of the trends expected when changing the dielectric constant and barrier height of the insulators. These tunneling calculations have a number of approximations that must be considered.…”

Section: Tunneling Modelmentioning

confidence: 99%

Modeled tunnel currents for high dielectric constant dielectrics

Vogel

Ahmed

Hornung

et al. 1998

IEEE Trans. Electron Devices

153

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The effect of dielectric constant and barrier height on the WKB modeled tunnel currents of MOS capacitors with effective oxide thickness of 2.0 nm is described. We first present the WKB numerical model used to determine the tunneling currents. The results of this model indicate that alternative dielectrics with higher dielectric constants show lower tunneling currents than SiO 2 at expected operating voltages. The results of SiO 2 /alternative dielectric stacks indicate currents which are asymmetric with electric field direction. The tunneling current of these stacks at low biases decreases with decreasing SiO 2 thickness. Furthermore, as the dielectric constant of an insulator increased, the effect of a thin layer of SiO 2 on the current characteristics of the dielectric stack increases. Semiconductor Research Corporation (SRC Contract 132).

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Section: Tunneling Modelmentioning

confidence: 99%

Modeled tunnel currents for high dielectric constant dielectrics

Vogel

Ahmed

Hornung

et al. 1998

IEEE Trans. Electron Devices

153

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“…Fortunately, this attribute has recently been demonstrated in jet-vapor deposited (JVD) silicon nitride [10]- [11], and is likely to be reproduced some day in advanced CVD silicon nitride as well. Therefore, the nitride layers in this study were all deposited by the JVD technique.…”

Section: Methodsmentioning

confidence: 88%

“…In advanced gate dielectric applications using ultrathin N/O stack, the trap density in the silicon nitride layer must be minimized to improve reliability and to reduce leakage current. In such a case, the current transport through the nitride is dominated by the electron tunneling process, as recently demonstrated [10], [11], and Publisher Item Identifier S 0741-3106(98)07391-1. previous models used for calculating the leakage current through N/O stacks are no longer valid.…”

Section: Introductionmentioning

confidence: 80%

“…Therefore, the nitride layers in this study were all deposited by the JVD technique. The details about the JVD technique can be found in recent publications [10], [11].…”

Section: Methodsmentioning

confidence: 99%

“…1, the model used in our calculation has two features that are distinctly different from all previous models. First, unlike previous studies which used Frenkel-Poole conduction mechanism for nitride, this model takes electron tunneling as the conduction mechanism in the nitride, which is what one observes in ultrathin nitride films containing low densities of traps [10], [11]. Second, to simplify the calculation we only deal with ultrathin ( 4 nm) films in the low voltage regime such that energy conservation of the tunneling electrons is expected, as shown in Fig.…”

Section: Theoretical Modelmentioning

confidence: 99%

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Tunneling leakage current in ultrathin (<4 nm) nitride/oxide stack dielectrics

Shi

Wang

1998

IEEE Electron Device Lett.

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The leakage current in high-quality ultrathin silicon nitride/oxide (N/O) stack dielectric is calculated based on a model of one-step electron tunneling through both the nitride and the oxide layers. The results show that the tunneling leakage current in the N/O stack is substantially lower than that in the oxide layer of the same equivalent oxide thickness (EOT). The theoretical leakage current in N/O stack has been found to be a strong function of the nitride/oxide EOT ratio: in the direct tunneling regime, the leakage current decreases monotonically as the N/O ratio increases, while in the Fowler-Nordheim regime the lowest leakage current is realized with a N/O EOT ratio of 1 : 1. Due to the asymmetry of the N/O barrier shape, the leakage current under substrate injection is higher than that under gate injection, although such a difference becomes smaller in the lower voltage regime. Experimental data obtained from high quality ultrathin N/O stack dielectrics agree well with calculated results.

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Extending gate dielectric scaling limit by use of nitride or oxynitride

Wang

Shi

et al.

1995 Symposium on VLSI Technology. Digest of Technical Papers

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Highly Reliable Silicon Nitride Films Made by Jet Vapor Deposition

Cited by 3 publications

References 0 publications

Modeled tunnel currents for high dielectric constant dielectrics

Modeled tunnel currents for high dielectric constant dielectrics

Tunneling leakage current in ultrathin (<4 nm) nitride/oxide stack dielectrics

Extending gate dielectric scaling limit by use of nitride or oxynitride

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