Highly reliable mode-locked semiconductor lasers and their applications

Yokoyama, Hiroyuki; Hashimoto, Y.; Kurita, H.; Ogura, I.; Shimizu, Takanori; Kuribayashi, R.; Shirane, Masayuki; Yamada, Hirohito

doi:10.1109/cleopr.2001.971052

Cited by 19 publications

(24 citation statements)

References 4 publications

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“…1 Both sections are separated by a 20-m-unbiased region in order to ensure electrical isolation. The model and device parameters (Table I) have been validated with the experimental characterization of the device given in [31].…”

Section: A General Considerationsmentioning

confidence: 99%

“…The electric field is decomposed into transversal and longitudinal parts (1) being the polarization vector along the heterostructure plane. The lateral and transverse modes, , are determined using the effective index approximation [20].…”

Section: A Optical Modelmentioning

confidence: 99%

“…In this paper, we theoretically investigate the noise properties of external-cavity mode-locked semiconductor lasers (ECMLL) using a detailed fully distributed time-domain model. The interest for ECMLL sources is mainly motivated by their excellent performance [1], [19] and ultrafast dynamics of the gain/absorption, dispersion, self-phase modulation, and the mechanisms coupling spontaneous emission noise into timing jitter. The fully distributed description combines accuracy and efficiency, which allows us to explore parameter dependencies even when performing Monte Carlo simulations.…”

Section: Introductionmentioning

confidence: 99%

“…M ODE-LOCKED semiconductor lasers are sources of intense and short optical pulses [1]- [3] attractive for diverse applications, including: optical sampling, clocking, spectroscopy, etc. In particular, the feasibility of these devices in high-speed communication systems, using optical time-division multiplexing (OTDM), relies on the possibility of achieving sufficiently short pulsewidths and low timing jitter (less than 10% the bit period [4]).…”

Section: Introductionmentioning

confidence: 99%

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Analysis of Timing Jitter in External-Cavity Mode-Locked Semiconductor Lasers

Mulet

Mørk

2006

IEEE J. Quantum Electron.

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Abstract-We develop a comprehensive theoretical description of passive mode-locking in external-cavity mode-locked semiconductor lasers based on a fully distributed time-domain approach. The model accounts for the dispersion of both gain and refractive index, nonlinear gain saturation from ultrafast processes, selfphase modulation, and spontaneous emission noise. Fluctuations of the mode-locked pulses are characterized from the fully distributed model using direct integration of noise-skirts in the phase-noise spectrum and the soliton perturbations introduced by Haus. We implement the model in order to investigate the performance of a MQW buried heterostructure laser. Results from numerical simulations show that the optimum driving conditions for achieving the shortest pulses with minimum timing jitter occur for large reverse bias in the absorber section at an optimum optical bandwidth limited by Gordon-Haus jitter.

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Section: A General Considerationsmentioning

confidence: 99%

Section: A Optical Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Analysis of Timing Jitter in External-Cavity Mode-Locked Semiconductor Lasers

Mulet

Mørk

2006

IEEE J. Quantum Electron.

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“…[1][2][3] The viability of these devices in high-speed communication systems using optical time-division multiplexing (OTDM) relies on the possibility of achieving short pulsewidths and low timing jitter levels. For example, transmission at 640 Gbit/s imposes hard requirements, namely, pulsewidths ∼ 0.4 ps and timing jitter less than 100 fs.…”

Section: Introductionmentioning

confidence: 99%

Numerical investigations on the performance of external cavity mode-locked semiconductor lasers

Mulet¹,

Moerk²

2004

SPIE Proceedings

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The performance of an external-cavity mode-locked semiconductor laser is analyzed theoretically and numerically. Passive mode-locking is described using a fully-distributed time-domain model including fast effects, spectral hole burning and carrier heating. We provide optimization rules in order to improve the mode-locking performance, such as reducing the pulsewidth and time-bandwidth product as much as possible. Timing jitter is determined by means of extensive numerical simulations of the model, demonstrating that an external modulation is required in order to maintain moderate timing-jitter and phase-noise levels at low frequencies. The effect of the driving conditions is investigated in order to achieve short pulses and low timing jitter. Our results are in qualitative agreement with reported experiments and predictions obtained from the master equation for mode-locking.

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Measurements of longitudinal linewidth and relative intensity noise in ultrahigh-speed mode-locked semiconductor lasers

Haneda

Yoshida

Yokoyama³

et al. 2006

Electron. Comm. Jpn. Pt. II

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SUMMARYTo understand the fluctuations in laser output pulses, information about the longitudinal linewidth forming the pulses and the relative intensity noise (RIN) is very important. In this paper, we conducted detailed measurements of the linewidth and RIN in the oscillating longitudinal mode of a mode-locked laser diode (MLLD) having different fabrication methods for the repetition frequencies of 10 and 40 GHz. The results are a longitudinal linewidth of several megahertz to gigahertz, a constant linewidth exhibiting the longitudinal mode independence, and a larger RIN as the distance from the center of the oscillation spectrum increases.

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Highly reliable mode-locked semiconductor lasers and their applications

Cited by 19 publications

References 4 publications

Analysis of Timing Jitter in External-Cavity Mode-Locked Semiconductor Lasers

Analysis of Timing Jitter in External-Cavity Mode-Locked Semiconductor Lasers

Numerical investigations on the performance of external cavity mode-locked semiconductor lasers

Measurements of longitudinal linewidth and relative intensity noise in ultrahigh-speed mode-locked semiconductor lasers

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